HSS4148 RENESAS | Alldatasheet

Document overview

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Technical content

Features

  • Low capacitance. (C = 4.0 pF max)
  • Short reverse recovery time. (trr = 4.0 ns max)
  • Suitable for 5mm-pitch high speed automatic insertion.

Ordering Information

Type No. Cathode band Mark Package Code HSS4148 Black 1 MHD Pin Arrangement 1. Cathode 2. AnodeCathode band Type No. 1 2

Rev.1.00 Sep 17, 2004 page 2 of 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage V R M 100 V Reverse voltage V R 75 V Average rectified current I O 150 mA Peak forward surge current IFM 450 mA Non-Repetitive peak forward surge current IFSM *1 1 A Junction temperature Tj 175 °C Storage temperature Tstg −65 to +175 °C Note: 1. Forward Surge within one second duration

Electrical Characteristics

(Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage V F — — 1.0 V I F = 10 mA Reverse current I R — — 25 nA V R = 20 V Capacitance C — — 4.0 pF V R = 0 V, f = 1 MHz Reverse recovery time t rr *1 — — 4.0 ns I F = 10 mA, VR = 6 V, Irr = 1 mA, RL = 100 Ω Note: 1. Reverse recovery time test circuit 0.1 µF DC Supply Pulse GeneratorRo = 50 Ω Rin = 50 ΩSampling Oscilloscope 3 kΩ Trigger Thermal Characteristics Item Typ Unit Rth(j-a) (300) * 1 °C/W Note: 1. Reference only.

Rev.1.00 Sep 17, 2004 page 3 of 4 Main Characteristic Ta = -25 Ta = Ta = 125 Ta = 75 02 0 6 0 8 0 40 100 Ta = 75°C Ta = 125°C Ta = 25°C 1.0 10 1.0 102 f = 1MHz 10–4 10–3 10–2 10–1 10–1 10–5 10–6 10–4 10–7 10–8 10–9 Fig.2 Reverse current vs. Reverse voltage Reverse voltage VR (V) Reverse current IR (A) Fig.1 Forward current vs. Forward voltage Forward voltage VF (V) Forward current IF (A) Fig.3 Capacitance vs. Reverse voltage Reverse voltage VR (V) Capacitance C (pF)

Rev.1.00 Sep 17, 2004 page 4 of 4 Package Dimensions 26.0 Min 2.4 Max 2.0 0.4 φ φ

26.0 Min

(reference value) MHD Conforms 0.084 g As of January, 2003 Unit: mm

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan http://www.renesas.com Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Renesas Technology Singapore Pte. Ltd.

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