HSS100 EIC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

HSS100 SCHOTTKY BARRIER DIODE FEATURES :

  • Very Low IR
  • Low VF and high efficiency.
  • Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Symbol Value Unit Reverse Voltage VR 60 V Average Rectified Current Io 35 mA Power Dissipation PD 150 mW Junction Temperature TJ 125 °C Storage temperature range Tstg -65 to + 125 °C Electrical Characteristics (Ta = 25°C unless otherwise noted) Parameter Symbol Min Typ Max Unit Reverse Current IR VR = 50 V - - 100 nA Reverse Voltage VR IR = 10 µA 60 - - V IF = 10 mA - - 0.42 V IF = 20 mA - - 0.90 V Diode Capacitance Cd VR = 0V, f = 1MHz - - 2.2 pF Diode Capacitance Deviation ∆Cd VR = 0V, f = 1MHz - - 0.2 pF ∆VF IF = 20 mA - - 10 mV Page 1 of 2 Rev. 02 : March 24, 2005 Test Condition Parameter Forward Voltage Deviation Forward Voltage VF DO - 34 Glass 0.063 (1.6 )max. 0.119 (3.04) max. 0.022 (0.55)max. Dimensions in inches and ( millimeters ) 1.00 (25.4) min. 1.00 (25.4) min. Cathode Mark

RATING AND CHARACTERISTIC CURVES ( HSS100 ) Forward Current VS. Forward Voltage Reverse Current VS. Reverse Voltage Diode capacitance VS. Reverse Voltage Page 2 of 2 Rev. 02 : March 24, 2005 0 40 Reverse Voltage , VR (V) Diode Capacitance , Cd (pF) 0 0.4 1.0 Forward Voltage , VF (V) 10-9 Forward Current , IF (A) Reverse Voltage , VR (V) Reverse Current , IR (A) 0 20 40 6050 0.2 0.6 0.8 1.2 0.8 1.8 3010 10-8 10-7 10-6 10-5 10-4 10-3 10-2 10-1 10-9 10-8 10-7 10-6 10-10 0.2 0.4 0.6 1.0 1.2 1.4 1.6 2.0 2.2 10 20 30 50 60