HSR05LC HUIXIN | Alldatasheet
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Technical content
Ultra Low Capacitance ESD Protection Diodes Array DESCRIPTION FEATURES HSR05LC provides a typical line to line capacitance of 0.6pF and low insertion loss up to 3GHz providing greater signal integrity making it ideally suited for USB 2.0 applications, such as Digital TVs, DVD players, Computing, set-top boxes and MDDI applications in mobile computing devices. This device has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients). Protects two I/O lines and one Vcc line Low capacitance Low leakage current No insertion to 3.0 GHz 5V operating voltage Response time < 1ns Solid-state silicon avalanche technology Device meets MSL 1 requirements RoHS compliant MACHANICAL DATA SOT-143 package Flammability Rating: UL 94V-0 Terminal: Matte tin plated. Packaging: Tape and Reel High temperature soldering guaranted: 260℃/10s Reel size: 7 inch ORDERING INFORMATION APPLICATIONS Device: HSR05LC Package: SOT-143 Marking: SL3 or R05 Material: Halogen free Packing: Tape & Reel Quantity per reel: 3,000pcs xDSLI USB 1.1/2.0/OTG IEEE 1394 Firewire Ports Notebooks & Handhelds Projection TV & Monitors Set-top box Flat Panel Displays PIN CONFIGURATION PACKAGE OUTLINE 6GMK1UL4
Ultra Low Capacitance ESD Protection Diodes ArrayA BSOLUTE MAXIMUM RATING Symbol Parameter Value Units PPP Peak Pulse Power (8/20μs) 150 W IPP Peak Pulse Current (8/20μs) 6 A VESD ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) TOPT Operating Temperature -55/+150 C TSTG Storage Temperature -55/+150 C ELECTRICAL CHARACTERISTICS (Tamb=25C) Symbol Parameter Test Condition Min Typ Max Units VRWM Reverse Working Voltage Any I/O pin to GND 5.0 V VBR Reverse Breakdown Voltage IT = 1mA Any I/O pin to GND 6.0 V IR Reverse Leakage Current VRWM = 5V Any I/O pin to GND 1 μA VF Diode Forward Voltage I F = 15mA 0.85 1.2 V VC1 Clamping Voltage 1 IPP = 1A, tp = 8/20μs Any I /O pin to GND 25 V IPP Peak Pulse Current tp = 8/20μsAny I /O pin to GND 15.5 V VC2 Clamping Voltage 2 IPP = 6A, tp = 8/20μs Any I/O pin to GND 5 A CJ1 Junction Capacitance 1 VR = 0V, f = 1MHz Between I/O pins 0.45 0.6 pF CJ2 Junction Capacitance 2 VR = 0V, f = 1MHz Any I/O pin to GND 0.9 1.2 pF Note: I/O pins are pin2,3. 6GMK2UL4 kV ±30 ±30
Ultra Low Capacitance ESD Protection Diodes Array ELECTRICAL CHARACTERISTICS CURVE 6GMK3UL4
Ultra Low Capacitance ESD Protection Diodes Array SOT-143 PACKAGE OUTLINE DIMENSIONS SOT-143 EL 0.250 c D d e A2AA1 b Symbol Dimensions In Millimeters Dimensions In Inches Min Max MIN MAX A 0.90 1.15 0.035 0.045 A1 0.00 0.10 0.000 0.004 A2 0.90 1.05 0.035 0.041 b 0.30 0.50 0.012 0.020 b1 0.75 0.90 0.030 0.035 c 0.08 0.15 0.003 0.006 D 2.80 3.00 0.110 0.118 d 0.20TYP 0.008TYP E 1.20 1.40 0.047 0.055 E1 2.25 2.55 0.089 0.10 e 0.95TYP 0.037TYP e1 1.80 2.00 0.071 0.079 L 0.55REF 0.022REF L1 0.30 0.50 0.012 0.020 6GMK4UL4