HSMBJSAC5.0 ETC2 | Alldatasheet

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Features

 Breakdown Voltages (VBR) from 5.0 to 75V  500W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01%  Low capacitance  Fast Response Time  Excellent clamping capability  High temperature soldering guaranteed: 265℃ /10 seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg) tension Application  Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICS, MOSFE, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication Mechanical Data  Case: Void-free transfer molded thermosetting epoxy body meeting UL94V-O  Terminals: Tin-Lead or ROHS Compliant annealed matte-Tin plating readily solderable per MIL-STD-750, Method 2026  Marking: Body marked with part number  Polarity: Cathode indicated by band  Weight: 0.093g（Approximately） CASE: SMB (DO214AA) Dimensions in inches and (millimeters) 打印无效

HSMBJSAC5.0 thru HSMBJSAC75 Document Number: HSMBJSAC5.0 thru HSMBJSAC75 www.smsemi.com Feb.29, 2012 2 Microsemi Part Number Reverse Stand Off Voltage (Note1) Breakdown Voltage VBR @ IBR 1.0mA Maximum Standby current ID @ VWM Maximum Peak Pulse Current Maximum Clamping Voltage VC @ IPP=5.0A (Note2) Maximum Capacitance @ 0 Volts pF Working Inverse Blocking Voltage Inverse Blocking Leakage Current @ VWIB Peak Inverse Blocking Voltage VWM(V) VBR(V) ID(µA) IPP (A) VC(V) C (pF) VWIB(V) IIB(μA) VPIB(V) HSMBJSAC5.0 HSMBJSAC6.0 HSMBJSAC7.0 HSMBJSAC8.0 5.0 6.0 7.0 8.0 7.60 7.90 8.33 8.89 300 300 300 100 44.0 41.0 38.0 36.0 10.0 11.2 12.6 13.4 100 100 100 100 HSMBJSAC8.5 HSMBJSAC10 HSMBJSAC12 HSMBJSAC15 7.5 10.0 12.0 15.0 9.44 11.1 13.3 16.7 5.0 5.0 5.0 34.0 29.0 25.0 20.0 14.0 16.3 19.0 23.6 100 100 100 100 HSMBJSAC18 HSMBJSAC22 HSMBJSAC26 HSMBJSAC36 18.0 22.0 26.0 36.0 20.0 24.4 28.9 40.0 5.0 5.0 5.0 5.0 15.0 14.0 11.1 8.6 28.8 35.4 42.3 60.0 100 100 100 100 HSMBJSAC45 HSMBJSAC50 HSMBJSAC75 45.0 50.0 75.0 50.0 55.5 83.3 5.0 5.0 5.0 6.8 5.8 4.1 77.0 88.0 121.0 150 150 150 200 200 200 Note1: A transient voltage suppressor is normally selected according to voltage (VWM), which should be equal to or greater than the dc or continuous peak operating voltage level. Note2: Test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein. Characteristic Curve Fig. 1 Peak Pulse Power vs. Pulse Time Fig.2 Pulse Waveform for Exponential Surge PPP - Peak Pulse Power (kW) 100 1.0 0.1 0.1 1.0 10 102 103 104 tw-Pulse Width (µs) 0 1.0 2.0 3.0 t-Time (ms) tr=10µs Peak Value IPP Half Value IPP 10/1000µs Waveform as defined by R.E.A. 150 100 IPP - Peak Pulse Current - % IPP Impulse Exponential Decay 1.0 0.5 IPP IPP tW tW tW=0.71p tp Half Sine Square Wave Current Waveforms tW 打印无效

HSMBJSAC5.0 thru HSMBJSAC75 Document Number: HSMBJSAC5.0 thru HSMBJSAC75 www.smsemi.com Feb.29, 2012 3 Schematic Applications The TVS low capacitance device configuration is shown in Fi g.4. As a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in paralle l in the sane polarity direction as the TVS as shown in Fig.5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also prov ide a low voltage conducting direction. The added rectifier diode should be of similar low capacit ance and also have a higher reverse voltage rating than the TVS clamping voltage V C. If using two (2) low capacitance TVS devices in al so provided. The unidirectional and bidirectional configurations in Fig.5 and 6 will both in twice the capacitance of Fig.4 Fig.3 Derating Curve 100 PPP-Peak Pulse Power or continuous Average Power in Percent of 25 ℃ (%) Peak Pulse Power (Single Pulse). Average Power 0 50 100 150 200 Lead or Ambient Temperature (℃) TVS DIODE IN OUT Fig.4 TVS with internal Low Capacitance Diode Fig.5 Optional Unidirectional configuration (TVS and separate rectifier diode in parallel) Fig.6 Optional Bidirectional configuration (two TVS and devices in anti-parallel) 打印无效