HSMBJSAC8.0

HSMBJSAC5.0 MICROSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 3

Technical content

HSMBJSAC5.0 thru HSMBJSAC50

500 WATT LOW CAPACITANCE

TRANSIENT VOLTAGE SUPPRESSOR SCOTTSD A L E DIVISION WWW.Microsemi .COM HSMBJSAC5.0 thru HSMBJSAC50 DESCRIPTION APPEARANCE The HSMBJSAC t ransient voltage su ppressor (TVS) se ries rat ed at 500 Watts provides an added rectifier element as shown in Figure 4 to achieve low capacitance in applications for data or signal lines. The low capacitance rating of le ss tha n 3 0 p F may b e u sed for protecting higher frequency applications in indu ctive swit ching environments or ele ctrical system s involving secondary li ghtning effe cts per IEC6 1000-4-5 a s well a s RTCA/DO-160D o r ARINC 429 fo r airbo rne avionics. If bidire ctional protection is needed, two HSMBJSAC devices in anti-parallel configuration are required as shown in Figure 6. With their very fast response time, they also provide ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively. DO-214AA See package notes IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS

• Unidirectional low-capacitance TVS series (for bidirectional see Figure 6)
• Suppresses transient up to 500 Watts Peak Pulse Power @ 10/1000 µs
• Improved performance in low capacitance of 30 pF
• Economical small plastic surface mount with robust axial subassembly package
• Options for screening in accordance with MIL-PRF- 19500 for JAN, JANTX, JANTXV, and JANS are also available by adding MQ, MX, MV, or MSP prefixes respectively to part number, e.g. MXSAC5.0, MVSAC18, etc.
• Also available in surface mount with SMAJ prefix for part numbers (ex. SMAJSAC5.0)
• UL94V-0 Flammability Classification
• Low Capacitance for data-line protection to 70 MHz
• Protection for aircraft fast data rate lines per select level waveforms in RTCA/DO-160D & ARINC 429
• ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively
• Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1: HSMBJSAC5.0 to HSMBJSAC50 Class 2: HSMBJSAC5.0 to HSMBJSAC45 Class 3: HSMBJSAC5.0 to HSMBJSAC22 Class 4: HSMBJSAC5.0 to HSMBJSAC10

• Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance

Class 1: HSMBJSAC5.0 to HSMBJSAC26 Class 2: HSMBJSAC5.0 to HSMBJSAC15 Class 3: HSMBJSAC5.0 to HSMBJSAC7.0 MAXIMUM RATINGS MECHANICAL AND PACKAGING

• Peak Pulse Power Dissipation at 25 o C: 500 Watts @ 10/1000 µs with repetition rate of 0.01% or less*
• Steady State Power Dissipation* at TL = +75 o C: 2.5 Watts.
• Clamping Speed (0 volts to V(BR) Min.) less than 5 nanoseconds.
• Operating and Storage Temperature: -65 o C to +150 o
• CASE: Void Free Transfer Molded Thermosetting Plastic (see DO-214AA dimensions and notes)
• FINISH: All External Surfaces Are Corrosion Resistant and Leads Solderable
• POLARITY: Cathode (TVS) Marked with Band
• MARKING: Part number without HSMBJ prefix (ie. SAC5.0)
• WEIGHT: 0.1 Grams (Approx.) * TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff voltage) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region) of the TVS element. Also see Figures 5 and 6 for further protection details in rated peak pulse power for unidirectional and bidirectional configurations respectively. Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1Copyright  2002 11-24-2003 REV A

HSMBJSAC5.0 thru HSMBJSAC50 TRANSIENT VOLTAGE SUPPRESSOR SCOTTSD A L E DIVISION WWW.Microsemi .COM HSMBJSAC5.0 thru HSMBJSAC50 ELECTRICAL CHARACTERISTICS @ 25oC MICROSEMI PART NUMBER REVERSE STAND-OFF VOLTAGE (Note 1) VWM Volts BREAKDOWN VOLTAGE @ I(BR) 1.0mA V(BR) Volts Min. MAXIMUM STANDBY CURRENT @VWM ID µA MAXIMUM CLAMPING VOLTAGE IP = 5.0A* VC Volts MAXIMUM PEAK PULSE CURRENT* RATING IPP Amps CAPACITANCE @ O Volts pF WORKING INVERSE BLOCKING VOLTAGE VWIB Volts INVERSE BLOCKING LEAKAGE CURRENT @ VWIB IIB mA PEAK INVERSE BLOCKING VOLTAGE VPIB Volts HSMBJSAC5.0 HSMBJSAC6.0 5.0 6.0 7.60 7.90 300 300 10.0 11.2 100 100 HSMBJSAC7.0 HSMBJSAC8.0 7.0 8.0 8.33 8.89 300 100 12.6 13.4 100 100 HSMBJSAC8.5 HSMBJSAC10 8.5 9.44 11.10 5.0 14.0 16.3 100 100 HSMBJSAC12 HSMBJSAC15 13.30 16.70 5.0 5.0 19.0 23.6 100 100 HSMBJSAC18 HSMBJSAC22 20.00 24.40 5.0 5.0 28.8 35.4 100 100 HSMBJSAC26 HSMBJSAC36 28.90 40.0 5.0 5.0 42.3 60.0 11.1 8.6 100 100 HSMBJSAC45 HSMBJSAC50 50.00 55.50 5.0 5.0 77.0 88.0 6.8 5.8 150 150 200 200 *See Figure 3 Clamping Factor: The ratio of the numerical value of VC to V(BR) is typically 1.4 @ full rated power, 1.20 @ 50% rated power. Also see MicroNote 108. Note 1: A transient voltage suppressor is normally selected according to voltage (VWM), that should be equal to or greater than the dc or continuous peak operating voltage level. Note 2: When pulse testing, test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein. GRAPHS t w – Pulse Width µs FIGURE 1 Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2Copyright  2002 11-24-2003 REV A

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3Copyright  2002 11-24-2003 REV A WWW.Microsemi .COM HSMBJSAC5.0 thru HSMBJSAC50 TRANSIENT VOLTAGE SUPPRESSOR SCOTTSD A L E DIVISION HSMBJSAC5.0 thru HSMBJSAC50 Peak Power (Single Pulse) IPP – Peak Pulse Current - %I PP % of Rated Power Average Power TL – Lead Temperature – o C t – Time – msec FIGURE 2 FIGURE 3 Lead Length = 3/8” SCHEMATIC APPLICATIONS The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in in Figure 5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage VC. Consult factory for recommended rectifier part number. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the reverse of each rectifier diode) is also provided. The unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4. FIGURE 4 FIGURE 5 TVS with internal Low Optional Unidirectional Capacitance Diode configuration (TVS and separate rectifier diode) PACKAGE DIMENSIONS DIMENSIONS INCHES MILLIMETERS DIM MIN MAX MIN MAX A .073 .087 1.85 2.21 B .160 .180 4.06 4.57 C .130 .155 3.30 3.94 D .205 .220 5.21 5.59 E .075 .130 1.91 3.30 F .030 .060 .76 1.52 G .006 .016 .15 .41 NOTE: Dimension E exceeds the JEDEC outline in height as shown in parallel) FIGURE 6 Optional Bidirectional configuration (two TVS devices in anti-parallel)