HSM83 KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Dio des Switching Diodes HSM83 (KSM83) ■ Features
- High reverse voltage. (VR = 250V)
- Silicon Epitaxial Planar Diode for High Voltage Switching 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01
1 Anode
3 Cathode
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Peak Reverse Voltage VRM 300 DC Blocking Voltage VR 250 Average Rectified Output Current Io 100 Peak Forward Surge Current IFM 300 Non-Repetitive Peak Forward Surge Current (Note.1) IFSM 2 A Junction Temperature TJ 125 Storage Temperature range Tstg -55 to 125 V mA Note.1: Value at duration of 10msec. ■ Electrical Characteristics Ta = 25℃ ■ Marking Marking F7 Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 300 Forward voltage VF IF= 100 mA 1.2 IR1 VR=250 V 0.2 IR2 VR=300 V 100 Capacitance between terminals CT VR= 0 V, f= 1 MHz 1.5 3 pF Reverse recovery time trr IF=IR=30mA,Irr=3mA, RL=100Ω 100 ns Reverse voltage leakage current uA V
www.kexin.com.cn2 Diod es Switching Diodes HSM83 (KSM83) ■ Typical Characterisitics Forward voltage V F (V) Forward current IF (A) Reverse voltage V R (V) Reverse current I R (A) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage Capacitance C (pF) Fig.3 Capacitance Vs. Reverse voltage Reverse voltage V R (V) 10-6 10-7 10-8 10-9 10-5 10-3 2500 50 200 10-8 150100 10-6 10-5 1.0 1.0 f=1MHz 10-1