HSM24C-A HUIXIN | Alldatasheet

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Bidirectional TVS Diode Array DESCRIPTION FEATURES The HSM24C-A is designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. These devices are ideal for situations where board space is at a premium. This series has been specifically designed to protect sensitive components which are connected to power、data and transmission lines from overvoltage caused by ESD(electrostatic discharge), CDE (Cable Discharge Events),and EFT (electrical fast transients).  IEC61000-4-2 (ESD) ±30kV (Contact) ±30kV (Air)  IEC61000-4-4 (EFT) 40A (5/50ηs)  350 Watts Peak Pulse Power (tp=8/20μs)  Protects two bidirectional lines  Low clamping voltage  Working voltages : 24V  Low leakage current  Qualified according to AEC-Q101 MACHANICAL DATA  SOT-23 package  Flammability Rating: UL 94V-0  High temperature soldering guaranteed: 260℃/10s  Packaging: Tape and Reel  Reel size: 7 inch  MSL 1 ORDERING INFORMATION APPLICATIONS  Device: HSM24C-A  Package: SOT-23  Marking:  Material: Halogen free  Packing: Tape & Reel  Quantity per reel: 3,000pcs  Notebooks, Desktops, and Servers  Communication systems  Personal Digital Assistants (PDA’s)  Portable Instrumentation  Serial and Parallel Ports.  Can Bus PIN CONFIGURATION PACKAGE OUTLINE 6GMK1UL4

Bidirectional TVS Diode Array ABSOLUTE MAXIMUM RATING Symbol Parameter Value Units VESD ESD per IEC 61000-4-2 (Contact) ESD per IEC 61000-4-2 (Air) ±30 ±30 kV PPP Peak Pulse Power (8/20μs) 350 W TOPT Operating Temperature -55/+150 C TSTG Storage Temperature -55/+150 C TL Lead Soldering Temperature 260 (10 sec.) C ELECTRICAL CHARACTERISTICS (Tamb=25C) Symbol Parameter Test Condition Min Typ Max Units VRWM Reverse Working Voltage Pin 1,2 to Pin3 24 V VBR Reverse Breakdown Voltage IT = 1mA Pin 1,2 to Pin3 26.7 32 V IR Reverse Leakage Current VRWM = 24V Pin 1,2 to Pin3 1 μA VC1 Clamping Voltage 1 IPP = 1A, tp = 8/20μs Pin 1,2 to Pin3 43 V VC2 Clamping Voltage 2 IPP = 7A, tp = 8/20μs Pin 1,2 to Pin3 52 V CJ Junction Capacitance VR = 0V, f = 1MHz Pin 1,2 to Pin3 24 50 pF 6GMK2UL4

Bidirectional TVS Diode Array ELECTRICAL CHARACTERISTICS CURVE 6GMK3UL4

Bidirectional TVS Diode Array SOT-23 PACKAGE OUTLINE DIMENSIONS 6GMK4UL4