HSM223C KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Diodes Switching Diodes HSM223C ■ Features
- Low Capacitance,Proof against High Voltage.
- Fast recovery time.
- MPAK Package is suitable for high density surface mounting and high speed assembly. 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 2.NC 1.Cathode 3.Anode 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Reverse voltage VR 80 Peak voltage VRM 85 Average rectified current Io 100 Peak forward surge current IFM 300 Non-repetitive peak forward surge current IFSM 4 A Junction Temperature TJ 125 Storage temperature range Tstg -55 to 125 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 80 VF1 IF= 10 mA 0.76 1.0 VF2 IF= 50 mA 0.88 1.0 VF3 IF= 100 mA 0.97 1.2 Reverse voltage leakage current IR VR= 80V 0.1 uA Junction capacitance Cj VR= 0 V, f= 1 MHz 0.5 2.0 pF Reverse recovery time trr IF=10mA,VR =6V, RL=50Ω 3.0 ns Forward voltage V ■ Marking NO. HSM223C Marking A8
www.kexin.com.cn2 Diod es Switching Diodes HSM223C ■ Typical Characterisitics