HSDL-4200_1 HP | Alldatasheet

Document overview

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Technical content

Features

  • Very High Power TS AlGaAs Technology
  • 875 nm Wavelength
  • T-1 3/4 Package
  • Low Cost
  • Very High Intensity: HSDL-4220 - 38 mW/sr HSDL-4230 - 75 mW/sr
  • Choice of Viewing Angle: HSDL-4220 - 30° HSDL-4230 - 17°
  • Low Forward Voltage for Series Operation
  • High Speed: 40 ns Rise Times
  • Copper Leadframe for Improved Thermal and Optical Characteristics

Applications

  • IR Audio
  • IR Telephones
  • High Speed IR Communications IR LANs IR Modems IR Dongles
  • Industrial IR Equipment
  • IR Portable Instruments Package Dimensions
  • Interfaces with Crystal Semiconductor CS8130 Infrared Transceiver

Description

The HSDL-4200 series of emitters are the first in a sequence of emitters that are aimed at high power, low forward voltage, and high speed. These emitters utilize the Transparent Substrate, double heterojunction, Aluminum Gal- lium Arsenide (TS AlGaAs) LED technology. These devices are optimized for speed and efficiency at emission wavelengths of 875 nm. This material produces high radiant efficiency over a wide range of currents up to 500 mA peak current. The HSDL-4200 series of emitters are available in a choice of viewing angles, the HSDL-4230 at 17° and the HSDL-4220 at 30°. Both lamps are packaged in clear T-1 (5 mm) packages. 5.00 ± 0.20 (0.197 ± 0.008) 1.27 (0.050)NOM. 1.14 ± 0.20 (0.343 ± 0.008) 2.35 (0.093)MAX. 0.70 (0.028)MAX. 0.50 ± 0.10 (0.020 ± 0.004)SQUARE CATHODE 5.80 ± 0.20 (0.228 ± 0.008) CATHODE 2.54 (0.100)NOM. 31.4 (1.23) MIN.

The wide angle emitter, HSDL- 4220, is compatible with the IrDA SIR standard and can be used with the HSDL-1000 integrated SIR transceiver. Absolute Maximum Ratings Parameter Symbol Min. Max. Unit Reference Peak Forward Current I FPK 500 mA [2], Fig. 2b Duty Factor = 20% Pulse Width = 100 µs Average Forward Current I FAVG 100 mA [2] DC Forward Current I FDC 100 mA [1], Fig. 2a Power Dissipation P DISS 260 mW Reverse Voltage (IR = 100 µA) V R 5V Transient Forward Current (10 µs Pulse) I FTR 1.0 A [3] Operating Temperature T O 07 0 °C Storage Temperature T S -20 85 °C LED Junction Temperature T J 110 °C Lead Soldering Temperature 260 for °C [1.6 mm (0.063 in.) from body] 5 seconds Notes: 1. Derate linearly as shown in Figure 4. 2. Any pulsed operation cannot exceed the Absolute Max Peak Forward Current as specified in Figure 5. 3. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and the wire bonds. Electrical Characteristics at 25°C Parameter Symbol Min. Typ. Max. Unit Condition Reference Forward Voltage V F 1.30 1.50 1.70 V I FDC = 50 mA Fig. 2a 2.15 I FPK = 250 mA Fig. 2b Forward Voltage ΔV/ΔT -2.1 mV/ °CI FDC = 50 mA Fig. 2c Temperature Coefficient -2.1 I FDC = 100 mA Series Resistance R S 2.8 ohms I FDC = 100 mA Diode Capacitance C O 40 pF 0 V, 1 MHz Reverse Voltage V R 22 0 V I R = 100 µA Thermal Resistance, R θjp 110 °C/W Junction to Pin The package design of these emitters is optimized for efficient power dissipation. Copper leadframes are used to obtain better thermal performance than the traditional steel leadframes.

Optical Characteristics at 25°C Parameter Symbol Min. Typ. Max. Unit Condition Reference Radiant Optical Power HSDL-4220 P O 19 mW I FDC = 50 mA

38 I FDC = 100 mA

HSDL-4230 P O 16 mW I FDC = 50 mA

32 I FDC = 100 mA

HSDL-4220 I E 22 38 60 mW/sr I FDC = 50 mA Fig. 3a

76 I FDC = 100 mA

190 I FPK = 250 mA Fig. 3b HSDL-4230 I E 39 75 131 mW/sr I FDC = 50 mA Fig. 3a

150 I FDC = 100 mA

375 I FPK = 250 mA Fig. 3b Radiant On-Axis Intensity Δ IE/ΔT -0.35 %/ °CI FDC = 50 mA Temperature Coefficient -0.35 I FDC = 100 mA Viewing Angle HSDL-4220 2 θ1/2 30 deg I FDC = 50 mA Fig. 6 HSDL-4230 2 θ1/2 17 deg I FDC = 50 mA Fig. 7 Peak Wavelength λPK 860 875 895 nm I FDC = 50 mA Fig. 1 Peak Wavelength Δλ /Δ T 0.25 nm/ °CI FDC = 50 mA Temperature Coefficient Spectral Width–at FWHM Δλ 37 nm I FDC = 50 mA Fig. 1 Optical Rise and Fall t r/tf 40 ns I FDC = 50 mA Times, 10%-90% Bandwidth f c 9 MHz I F = 50 mA Fig. 8 ± 10 mA

Ordering Information

Part Number Lead Form Shipping Option HSDL-4220 Straight Bulk HSDL-4230 Straight Bulk

9 MHz

Figure 8. Relative Radiant Intensity Figure 6. Relative Radiant Intensity vs. Angular Displacement HSDL-4220. Figure 7. Relative Radiant Intensity vs. Angular Displacement HSDL-4230.

www.semiconductor.agilent.com Data subject to change. Copyright © 1999 Agilent Technologies Inc. Obsoletes 5968-0956E (8/98) 5968-5912E (11/99)