HSCM041065K HUIXIN | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 8 HSCM041065K N-Channel Silicon Carbide Power MOSFET Features:

  • High Blocking Voltage with Low On-Resistance
  • High Speed Switching with Low Capacitances
  • Easy to Parallel and Simple to Drive
  • Avalanche Ruggedness
  • Lead Free Applications:
  • Solar Inverters
  • Switch Mode Power Supplies
  • High Voltage DC/DC Converters
  • EV Charging
  • Motor Drives Benefits:
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Increased Power Density
  • Increased System Switching Frequency

Ordering Information

Part Number Package Marking Packing Qty. HSCM041065K TO-247-3 HSCM041065K Tube 30 PCS Maximum Ratings（TJ= 25℃unless otherwise specified） Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 650 V VGS=0V,ID =100μA VGSmax Gate - Source Voltage -8/+19 V Absolute maximum values VGSop Gate - Source Voltage -4/+15 V Recommended operational values ID Continuous Drain Current 85

60 A VGS=15V, TC =25℃

VGS=15V, TC =100℃ ID(pulse) Pulsed Drain Current 217 A Pulse width tp limited by TJmax PD Power Dissipation 246 W TC =25℃, TJ =175℃ TL Solder Temperature 260 ℃ TJ, Tstg Operating Junction and StorageTemperature -55 to + 175 ℃ VDS RDS(ON)(Typ ) ID 650V 30mΩ 85A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 8 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 650 V VGS=0V,ID =100μA VGS(th) Gate Threshold Voltage 1.8 2.8 3.6 V VGS= VDS, IDS=10mA,TC =25℃

2.0 V VGS= VDS, IDS=10mA,TC =175℃

IDSS Zero Gate Voltage Drain Current 1 50 μA VDS= 650V, VGS=0V IGSS+ Gate-Source Leakage Current 1 200 nA VGS=15V, VDS= 0V IGSS- Gate-Source Leakage Current -200 -1 0 nA VGS=-4V, VDS= 0V RDS(on) Drain-Source on-state Resistance 30 41 mΩ VGS=15V, ID =30A, TC =25℃

41 VGS=15V, ID =30A, TC =175℃

Ciss Input Capacitance 2550 Pf VGS=0V, VDS=400 V, f=1MHz，Coss Output Capacitance 230 Crss Reverse Transfer Capacitance 6 EON Turn-On Switching Energy 250 μJ VDS =400V, VGS =-4/15 V ID = 30A, RG(ext) =25 Ω , L =100uH EOFF Turn-Off Energy 10 td(on) Turn-On Delay Time 16 ns tr Rise Time 31 td(off) Turn-Off Delay Time 28 tf Fall Time 9 RG(int) Internal Gate Resistance 0.8 Ω f=1 MHz, ID=0A Qgs Gate to Source Charge 31 nC VDS=400V, VGS=-4/15V ID = 30AQgd Gate to Drain Charge 40 Qg Total Gate Charge 107

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 8 Reverse Diode Characteristics （TJ= 25℃unless otherwise specified） Symbol Parameter Typ. Max Unit Test Conditions Note VSD Diode Forward Voltage

3.6 V VGS=-4V, ISD = 15 A, TJ = 25℃

3.1 V VGS=-4V, ISD=15 A, TJ= 175℃

4.0 V VGS=-4V, ISD = 30 A, TJ = 25℃

3.5 V VGS=-4V, ISD=30 A, TJ= 175℃

IS Continuous Diode Forward Current 52 A VGS=-4V,TC= 25℃ trr Reverse Recovery time 38 ns VGS=-4V, ISD= 30 A, VR = 400V，dif/dt=1600A/µsQrr Reverse Recovery Charge 200 nC Irrm Peak Reverse Recovery Current 12 A Thermal Characteristics （TJ= 25℃unless otherwise specified） Symbol Parameter Typ. Max Unit Test Conditions RθJC Thermal Resistance from Junction to Case 0.49 0.61 ℃/W

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 8 of 8 Package outline drawing (TO-247-3 Unit: mm )