HSCM016120K HUIXIN | Alldatasheet

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Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 8 HSCM016120K N-Channel Silicon Carbide Power MOSFET Features:

  • High Blocking Voltage with Low On-Resistance
  • High Speed Switching with Low Capacitances
  • Easy to Parallel and Simple to Drive
  • Avalanche Ruggedness
  • Lead Free Applications:
  • Solar Inverters
  • Switch Mode Power Supplies
  • High Voltage DC/DC Converters
  • EV Charging
  • Motor Drives Benefits:
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Increased Power Density
  • Increased System Switching Frequency

Ordering Information

Part Number Package Marking Packing Qty. HSCM016120K TO-247-3 HSCM016120K Tube 30 PCS Maximum Ratings（TJ= 25℃unless otherwise specified） Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1200 V VGS=0V,ID =100μA VGSmax Gate - Source Voltage -8/+22 V Absolute maximum values VGSop Gate - Source Voltage -4/+18 V Recommended operational values ID Continuous Drain Current 120

85 A VGS=18V, TC =25℃

VGS=18V, TC =100℃ Fig.19 ID(pulse) Pulsed Drain Current 250 A Pulse width tp limited by TJmax Fig.22 PD Power Dissipation 576 W TC =25℃, TJ =175℃ Fig.20 TL Solder Temperature 260 ℃ TJ, Tstg Operating Junction and StorageTemperature -55 to + 175 ℃ VDS RDS(ON)(Typ ) ID 1200V 16mΩ 120A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 8 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS=0V,ID =100μA VGS(th) Gate Threshold Voltage 1.9 2.6 4.0 V VGS= VDS, IDS=23mA,TC =25℃ Fig.11

1.8 V VGS= VDS, IDS=23mA,TC =175℃

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS= 1200V, VGS=0V IGSS+ Gate-Source Leakage Current 10 250 nA VGS=22V, VDS= 0V IGSS- Gate-Source Leakage Current 10 250 nA VGS=-8V, VDS= 0V RDS(on) Drain-Source on-state Resistance 16 22 mΩ VGS=18V, ID =75A, TC =25℃ Fig.4,5 ,628 VGS=18V, ID =75A, TC =175℃ gfs Transconductance 41.5 S VGS=20V, ID =75A, TC =25℃ Fig.7

36.5 VGS=20V, ID =75A, TC =175℃

Ciss Input Capacitance 4810 Pf VGS=0V, VDS=1000 V, f=1MHz， VAC=25 mV Fig. 17, 18, Coss Output Capacitance 205 Crss Reverse Transfer Capacitance 45 Eoss Coss Stored Energy 104 uJ EON Turn-On Switching Energy 2.1 mJ VDS =800V, VGS =-4/18V, ID = 30A, RG(ext) = 2.5Ω, L= 100μHEOFF Turn-Off Energy 1.6 td(on) Turn-On Delay Time 150 ns VDS =800V, VGS =-4/18 V ID = 30A, RG(ext) =2. 5 Ω , RL =20Ω tr Rise Time 38 td(off) Turn-Off Delay Time 108 tf Fall Time 35 RG(int) Internal Gate Resistance 2.2 Ω f=1 MHz, VAC=25mV Qgs Gate to Source Charge 65 nC VDS=800V, VGS=-4/18V ID =30A Fig.12Qgd Gate to Drain Charge 48 nC Qg Total Gate Charge 268

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 8 Reverse Diode Characteristics （TJ= 25℃unless otherwise specified） Symbol Parameter Typ. Max Unit Test Conditions Note VSD Diode Forward Voltage 4.2 V VGS=-4V, ISD =37.5 A, TJ = 25℃ Fig.8,9 ,103.9 V VGS=-4V, ISD=37.5 A, TJ= 175℃ IS Continuous Diode Forward Current 120 A TC= 25℃ trr Reverse Recovery time 54 ns ISD= 30A, VR = 800VQrr Reverse Recovery Charge 630 nC Irrm Peak Reverse Recovery Current 19 A Thermal Characteristics （TJ= 25℃unless otherwise specified） Symbol Parameter Typ. Max Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.26 ℃/W Fig.21 RθJA Thermal Resistance From Junction to Ambient 40

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 8 of 8 Package outline drawing TO-247-3 Unit: mm )