HSCH-9101 HP | Alldatasheet
Document overview
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Technical content
Features
- Gold tri-metal system for improved reliability
- Low capacitance
- Low series resistance
- High cutoff frequency
- Polyimide passivation
- Multiple configurations HSCH-9101 280 (11.0) 200 (7.8) 9 (0.4) 7 (0.3) 125 (4.9) 115 (4.5) 270 (10.6) 190 (7.5) 636 (25.0) 626 (24.6)L = 0.1 nH 183 (7.2) 178 (7.0)60 (2.4) 50 (2.0) HSCH-9201 280 (11.0) 200 (7.8) 9 (0.4) 7 (0.3) 115 (4.5) 105 (4.1) 346 (13.6) 266 (10.5) 712 (28.0) 702 (27.6) L = 0.1 nH 183 (7.2) 178 (7.0)60 (2.4) 50 (2.0) HSCH-9251 Junction Side Up 290± 50 (11.0) 200 (7.8) 9 (0.4) 7 (0.3) 125 (4.9) 115 (4.5) 280±50 (10.6) 190 (7.5) 712 (28.0) 702 (27.6) L = 0.1 nH DIMENSIONS IN µm (1/1000 inch) 183 (7.2) 178 (7.0) 60 (2.4) 50 (2.0)
Applications
This line of Schottky diodes is optimized for use in mixer applications at millimeter wave frequencies. Some suggested mixer types are single ended and single balanced for the single and series pair. The anti-parallel pair is ideal for harmonic mixers. Assembly Techniques Diodes are ESD sensitive. ESD preventive measures must be em ployed in all aspects of storage, handling, and assembly. Diode ESD precautions, handling considerations, and bonding methods are critical factors in successful diode performance and reliability. Agilent application note #55, “Beam Lead Diode Bonding and Handling Procedures” provides basic information on these subjects. Maximum Ratings Power Dissipation at T Measured in an infinite heat sink derated linearly to zero at maximum rated temperature Electrical Specifications at T A = 25°C Part Number Symbol Parameters and HSCH-9101 HSCH-9201 HSCH-9251 VR = 0 V, f = 1 MHz ∆Cj [1] Junction Capacitance Variation pF 0.005 0.010 VR = 0 V, f = 1 MHz RS [2] Series Resistance W 6 6 6 VF1 Forward Voltage mV 700 800 700 800 700 800 IF = 1 mA VF10 Forward Voltage mV 800 850 800 850 800 850 IF = 10 mA ∆VF Forward Voltage Variation mV 15 15 IF = 1 mA and 10 mA VBR Reverse Breakdown Voltage V 4.5 4.5 VR = VBR measure IR ≤ 10 µA (per junction) Notes: 1. Junction capacitance is determined by measuring total device capacitance and subtracting the calculated parasitic capacitance (0.035 pF). 2. Series resistance is determined by measuring the dynamic resistance and subtracting the calculated junction resistance of 6 Ω .
www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. Obsoletes 5965-8851E October 18, 2001 5988-1897EN