HSCH-5300

HSCH-5300 HP | Alldatasheet

Document overview

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Technical content

Features

• Platinum Tri-Metal System High Temperature Stability
• Silicon Nitride Passivation Stable, Reliable Performance
• Low Noise Figure Guaranteed 7.5 dB at 26 GHz
• High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics
• Rugged Construction

4 Grams Minimum Lead Pull

• Low Capacitance 0.10 pF Max. at 0 V
• Polyimide Scratch Protection

Description

These beam lead diodes are constructed using a metal- semiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semicon- ductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to I R drift. The Agilent beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance. Outline 07 Maximum Ratings Pulse Width = 1 µs, Du = 0.001 Measured in an infinite heat sink derated linearly to zero at maximum rated temperature T These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. 130 (5) 100 (4) CATHODE SILICON GLASS GOLD LEADS 135 (5) 90 (3) 310 (12) 250 (10) 225 (9) 200 (8) 225 (9) 170 (7) 710 (28) 670 (26) DIMENSIONS IN µm (1/1000 inch) 135 (5) 90 (3) 60 (2) 40 (1) 12 (.5) 8 (.3)

30 MIN (1)

Applications

The beam lead diode is ideally suited for use in stripline or microstrip circuits. Its small physical size and uniform dimen- sions give it low parasitics and repeatable RF characteristics through K-band. The basic medium barrier devices in this family are DC tested HSCH-5310, -5312, and -5316. A batch matched version is available as the HSCH-5317. Equivalent low barrier devices are HSCH-5330, -5332, and -5336. Batch matched Assembly Techniques Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information see Application Note 979, “The Handling and Bonding of Beam Lead Devices Made Easy,” or Application Note 993, “Beam Lead Device Bonding to Soft Substrates.” IF Min. Max. Max. Max. Impedance Break- Dynamic Total Max. Max. Part Batch* Noise Z IF (Ω ) down Resis- Capaci- Forward Leakage Number Matched Figure Max. Voltage tance tance Voltage Current HSCH- HSCH- Barrier NF (dB) Min. Max. SWR V BR (V) R D (Ω )C T (pF) V F (mV) I R (nA) 5318 5319 Medium 6.2 at 200 400 1.5:1 4 12 0.25 500 100

9.375 GHz

5314 5315 7.2 at 16 0.15

16 GHz

5340 5341 Low 7.5 at 150 350 1.5:1 4 20 0.10 375 400

26 GHz

Test ΔNF ≤ DC Load Resistance - 0 Ω IR ≤ 10 µAI F = 5 mA V R = 0 V I F = 1 mA V R = 1 V Conditions 0.3 dB LO Power = 1 mW f = 1 MHz ΔZIF ≤ IF = 30 MHz, 1.5 dB NF 25 Ω *Minimum batch size 20 units. Note: 1. CT = CJ + 0.02 pF (fringing cap). Table IA. Electrical Specifications for RF Tested Diodes at TA = 25°C versions are available as HSCH-5331 and -5333. For applications requiring guaranteed RF-tested perform- ance up to 26 GHz, the HSCH-5340 is selected with batch match units available as the HSCH-5341. The HSCH-5318 is selected for 6.2 dB maximum noise figure at

9.375 GHz; with RF batch match

units available as the HSCH-5319. The HSCH-5314 is rated at 7.2 dB maximum noise figure at 16 GHz with RF batch match units available as the HSCH-5315.

Minimum Maximum Maximum Maximum Maximum Part Batch* Breakdown Dynamic Total Forward Leakage Number Matched Voltage Resistance Capacitance Voltage Current HSCH- HSCH- Barrier V BR (V) R D (Ω )C T (pF) V F (mV) I R (nA) 5316 5317 Medium 4 12 0.25 500 100 5312 16 0.15 5310 20 0.10 5336 Low 4 12 0.25 375 400 5332 5333 16 0.15 5330 5331 20 0.10 Test ΔVF ≤ 15 mV I R ≤ 10 µAI F = 5 mA V R = 0 V I F = 1 mA V R = 1 V Conditions @ 5 mA f = 1 MHz *Minimum batch size 20 units. Table IB. Electrical Specifications for DC Tested Diodes at TA = 25°C Typical Detector Characteristics at TA = 25°C Medium Barrier and Low Barrier (DC Bias) Parameter Symbol Typical Value Units Test Conditions Tangential Sensitivity TSS -54 dBm 20 µA Bias, RL = 100 KΩ Video Bandwidth = 2 MHz Voltage Sensitivity γ 6.6 mV/ µW f = 10 GHz Video Resistance R V 1400 Ω Low Barrier (Zero Bias) Parameter Symbol Typical Value Units Test Conditions Tangential Sensitivity TSS -44 dBm Zero Bias, R L = 10 MΩ Video Bandwidth = 2 MHz Voltage Sensitivity γ 10 mV/ µW f = 10 GHz Video Resistance R V 1.8 M Ω SPICE Parameters HSCH-5316 HSCH-5312 HSCH-5330 Parameter Units HSCH-5318 HSCH-5314 HSCH-5310 HSCH-5340 HSCH-5332 HSCH-5336 BV V5 5 5 5 5 5 IBV A 10E - 5 10E -5 10E -5 10E -5 10E - 5 10E-5 IS A 3 x 10E - 10 3 x 10E -10 3 x 10E -10 4 x 10E -10 4 x 10E -8 4 x 10E-8 RS Ω 5 9 13 13 9 6 PT 222222

Figure 1. Typical Forward Figure 2. Typical Forward Figure 3. Typical Noise Figure vs. Figure 5. Typical Admittance Characteristics with External Figure 4. Typical Admittance Characteristics with 1 mA Self

Figure 6. Typical Admittance Characteristics with Self Bias. Figure 7. Typical Admittance Characteristics with External

18 GHz

12 GHz

Figure 8. Typical Admittance Characteristics with Self Bias. Figure 9. Typical Admittance Characteristics with External

20 µADC Bias 50 µADC Bias 150 µADC Bias Part Numbers R S (Ω )R j (Ω )C j (pF) R S (Ω )R j (Ω )C j (pF) R S (Ω )R j (Ω )C j (pF) 1.0 mA Self Bias 1.5 mA Self Bias 3.0 mA Self Bias Part Numbers R S (Ω )R j (Ω )C j (pF) R S (Ω )R j (Ω )C j (pF) R S (Ω )R j (Ω )C j (pF) HSCH-5340, -5341 External Bias 20 µA DC Bias 50 µA DC Bias 150 µA DC Bias Part Numbers R j (Ω )C j (pF) R j (Ω )C j (pF) R j (Ω )C j (pF) HSCH-5340, -5341 1300 0.09 560 0.09 187 0.10 Other HSCH-53XX External Bias 0.02 pF 0.1 nH C j R s R j 0.03 pF 11 Ω 0.1 nH 0.04 nH C j R j 0.02 pF 0.1 nH C j R jR s www.semiconductor.agilent.com Data subject to change. Copyright © 1999 Agilent Technologies 5965-8849E (11/99)