HSC20065K HUIXIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 3

Technical content

Features:

  • New Thin Wafer Technology ( )• Low Forward Voltage Drop VF
  • Zero Reverse Recovery Current
  • Zero Forward Recovery Voltage
  • Temperature-independent Switching Applications: Replace Bipolar with Unipolar Device• Reduction of Heat Sink Size• Parallel Devices Without Thermal Runaway• Essentially No Switching Losses• V = 650 VRRM ( )I = 20A T ≤156 F C °C Package TO-247 650V/20A SiC Schottky Diode Mechanical Data:
  • Switch Mode Power Supplies
  • Uninterruptible Power Supplies
  • Motor drive, PV Inverter, Wind Power Station Maximum Ratings ( )T =25 unless otherwise specifiedJ °C V V Unit 650 650 650 -55 ~ +175 HSC20065K V A A Parameter Max. Repetitive peak reverse voltage Surge Peak Reverse Voltage Max. DC blocking voltage Operating junction and storage temperature Peak forward surge current, 8.3ms single half ( leg)sine-wave superimposed on rated load per ( leg)Junction to case thermal resistance per Max. Forward Current ( )per leg/per device VRRM VRSM VDC T ,TJ STG Symbols IFSM IF Rθ J C °C/W1.0 IF 1 2 3 Pin1 Pin3 Pin2 Pin1 Pin3 Pin2 www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 1 of 3 ( leg)Power dissipation per Ptot 150 T ≤ 25°CJ T ≤ 135°CJ T ≤ 156°CJ IF 10 / 20 Electrical Characteristics per leg( ) UnitTYP 1.27 Parameter Instantaneous forward voltage Symbols MAX Reverse current V I =10A, T =25°C F J I =10A, T =175°C F J 1.50 1.38 V =650V, T =25°C R JμA 50 200 1.60 VF V =650V, T =175°C R J IR Total Capacitance 640 25Total Capacitive Charge Test Conditions V μA pF nC C QC V =0.1V, f=1MHzR V =200V, f=1MHzR V =400V, f=1MHzR V =400V, I =10AR F W pF pF

Fig.1 Forward Characteristics Typical Performance ( )Forward Rectified Current -I AF www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 2 of 3 ( )Instantaneous Forward Voltage- V VF T =25°CJ T =125°CJ T =175°CJ 600 ( )Peak Reverse Voltage -V VR Reverse Current -I (μA)R Fig.3 Typical Reverse Characteristics 1E-1 1E0 1E2 1E3 1E1 500400300200100 1E-2 T =25°CJ T =125°CJ T =175°CJ 75 125 175 ( )Case Temperature-T °CC 15010050250 ( )Power dissipation-P Wtot 100 150 200 Fig.4 Total Capacitance vs. Reverse Voltage ( )Reverse Voltage-V VR T =25°CJ 0.1 Fig.3 Power Derating 800 600 400 200 1 10 100 1000 ( )Capacitance-C pF 100 300 500 700 Rectangular Pulse Duration (sec) 1E-5 Fig.5 Normalized Transient Thermal Impedance, 1E-4 1E-3 1E-2 Normalized Transient Thermal Impedance 1E-2 1E-3 1E-1 1E0 1E-6 1E-1 Duty=0.5 Single Pulse 0.3 0.1 0.05 0.02 0.01

UNIT: mm Symbol A 5.204.80 b c D d e E L S ΦP MIN NOM MAX 5.00 2.592.21 2.40 1.351.05 1.20 2.211.91 2.01 0.750.50 0.60 21.320.7 21.0 17.015.7 16.3 1.380.95 1.16

5.44 BCS

16.215.5 15.9 E1 14.513.5 14.0 20.2219.82 19.92 4.564.00 4.28 3.803.40 3.60 6.305.80 6.10 p 7.606.60 7.10 b2 3.202.90 3.00 BACK VIEW S ΦP HEAT-SINK PLANE d p E DL M b1×2 b×3 e×2 A A c B www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 3 of 3