HSC119 KEXIN | Alldatasheet
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www.kexin.com.cn 1 Diodes SOD-523 Unit:mm 0.77max 0.6+0.1 -0.1 0.3 +0.05 -0.05 0.8 +0.05 -0.05 1.2 +0.1 -0.1 1.6 +0.1 -0.1 0.1 +0.05 -0.02 0.07max + -Features Marking Marking A Low capacitance. (C = 2.0 pF max) Short reverse recovery time. (trr = 3.0 ns max) Ultra small Flat Package (UFP) is suitable for surface mount design. High Speed Switching Diodes HSC119 (KSC119) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 85 VF1 IF= 10mA 0.8 VF2 IF= 100mA 1.2 Reverse voltage leakage current IR1 VR= 80V 0.1 uA Junction capacitance Cj VR= 0V, f= 1 MHz 2 pF Reverse recovery time trr IF=10mA, VR=6V,RL=50Ω 3 ns Forward voltage V ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Reverse voltage VRM 85 V Forward current IF 100 Peak forward surge current IFM 300 Junction Temperature TJ 125 Storage temperature range Tstg -55 to 125 mA
www.kexin.com.cn 1.0 1.2 Ta = -25 Ta = 25 Ta = 75°C 0 20 40 60 80 100 Ta=50°C Ta=75°C Ta=25°C 10–2 10–1 10–3 10–4 10–5 10–6 10–8 10–7 10–9 10–10 10–11 1.0 1.0 0.1 100.1 Fig.3 Capacitance vs. Reverse voltage Reverse voltage VR (V) f = 1MHz Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Forward current IF (A) Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage Reverse current IR (A) Capacitance C (pF) ■ Typical Characterisitics High Speed Switching Diodes 3k0.1µF Ro =50 Rin =50 DC Supply Pulse Generator Sampling Oscilloscope Trigger Ω Ω Ω HSC119 (KSC119)