HS-303CEH RENESAS | Alldatasheet
Document overview
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Technical content
HS-303CEH 1. Overview FN8399 Rev.4.00 Page 2 of 14 Jun.17.19 1. Overview
1.1 Pin Configuration
1.2 Pin Descriptions
14 Ld Flatpack
Pin Number Pin Name Pin Description
1 NC Not electrically connected
2 S3 Analog switch: source connection
3 D3 Analog switch: drain connection
4 D1 Analog switch: drain connection
5 S1 Analog switch: source connection
6 IN1 Digital control input for SW1 and SW3
7 GND Ground
8 V- Negative power supply
9 IN2 Digital control input for SW2 and SW4
10 S2 Analog switch: source connection
11 D2 Analog switch: drain connection
12 D4 Analog switch: drain connection
13 S4 Analog switch: source connection
14 V+ Positive power supply
HS-303CEH 1. Overview FN8399 Rev.4.00 Page 3 of 14 Jun.17.19
1.3 Ordering Information
Ordering SMD Number (Note 3) Part Number ( Note 2) Temp. Range (°C) Package (RoHS Compliant) Pkg. Dwg. # 5962R9581308VXC HS9-303CEH-Q -55 to +125 14 Ld Flatpack K14.A 5962R9581308V9A HS0-303CEH-Q -55 to +125 Die N/A N/A HS9-303CEH/PROTO ( Note 4) -55 to +125 14 Ld Flatpack K14.A N/A HS0-303CEH/SAMPLE ( Note 4) -55 to +125 Die N/A Notes: 2. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. 3. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in this table must be used when ordering. 4. The /PROTO and /SAMPLE are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These parts are intended for engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across the temperature range specified in the DLA SMD and are in the same form and fit as the qualified device. The /SAMPLE die is capable of meeting the electrical limits and conditions specified in the DLA SMD at +25°C only. The /SAMPLE is a die and does not receive 100% screening across the temperature range to the DLA SMD electrical limits. These part types do not come with a certificate of conformance because there is no radiation assurance testing and they are not DLA qualified devices.
HS-303CEH 2. Specifications FN8399 Rev.4.00 Page 4 of 14 Jun.17.19 2. Specifications
2.1 Absolute Maximum Ratings
2.2 Thermal Information
2.3 Recommended Ope ration Conditions
Parameter Minimum Maximum Unit Voltage Between V+ and V- Terminals 35 V ±VSUPPLY to Ground (V+, V-) ±17.5 V Analog Input Voltage (+VS) +VSUPPLY + 1.5 V (-VS) -VSUPPLY - 1.5 V Digital Input Voltage (+VA) +VSUPPLY + 4 V (-VA) -VSUPPLY - 4 V Peak Current (S or D), (Pulse at 1ms, 10% Duty Cycle Max) 40 mA Continuous Current 10 mA ESD Rating Value Unit Human Body Model 2k V Machine Model 200 V Charged Device Model 1k V CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely impact product reliability and result in failures not covered by warranty. Thermal Resistance (Typical) θ JA (°C/W) θ JC (°C/W) Flatpack Package (Notes 5, 6) 105 17 Notes: 5. θJA is measured in free air with the component mounted on a low-effective thermal conductivity test board in free air. See TB379. 6. For θJC, the “case temp” location is the center of the package underside. Parameter Minimum Maximum Unit Package Power Dissipation at 125°C for Flatpack Package
0.48 W/°C
Junction Temperature (TJ) +175 °C Storage Temperature Range -65 +150 °C Lead Temperature (Soldering, 10s) +300 °C Parameter Minimum Maximum Unit Operating Temperature Range -55 +125 °C Operating Supply Voltage Range (±VSUPPLY)± 1 5 V Analog Input Voltage (VS) ±VSUPPLY V Logic Low Level (VAL)0 0 . 8 V Logic High Level (VAH)4 . 0 + V SUPPLY V
HS-303CEH 2. Specifications FN8399 Rev.4.00 Page 5 of 14 Jun.17.19
2.4 Electrical Specifications
VSUPPLY = ±15V unless otherwise specified. Boldface limits apply across the operating temperature range, -55°C to +125°C. Parameter Symbol Test Conditions Min (Note 9)T y p Max (Note 9) Unit “Switch On” Resistance +r DS(ON) VD = 10V, IS = -10mA 35 75 Ω “Switch On” Resistance -r DS(ON) VD = -10V, IS = 10mA 35 75 Ω Leakage Current into Source of an “OFF” Switch +IS(OFF) VS = +14V, VD = -14V -150 0.05 150 nA VS = +15V, VD = -15V -20 20 µA Leakage Current into Source of an “OFF” Switch -IS(OFF) VS = -14V, VD = +14V -150 0.5 150 nA VS = -15V, VD = +15V -20 20 µA Leakage Current into Drain of an “OFF” Switch +ID(OFF) VS = +14V, VD = -14V -150 0.05 150 nA VS = +15V, VD = -15V -20 20 µA Leakage Current into Drain of an “OFF” Switch -ID(OFF) VS = -14V, VD = +14V -150 0.5 150 nA VS = -15V, VD = +15V -20 20 µA Leakage Current from an “ON” Driver into the Switch (Drain and Source) +ID(ON) VS = +14V, VD = +14V -100 -0.1 100 nA Leakage Current from an “ON” Driver into the Switch (Drain and Source) -ID(ON) VS = -14V, VD = -14V -100 0.01 100 nA Low Level Input Address Current I AL All Channels VA = 0.8V -1000 0.03 1000 nA High Level Input Address Current I AH All Channels VA = 4.0V -1000 0.03 1000 nA Positive Supply Current I+ All Channels V A = 0.8V 45 150 µA VA1 = 0V, VA2 = 4V VA1 = 4V, VA2 = 0V 0.15 0.6 mA Negative Supply Current I- All Channels V A = 0.8V -0.1 -100 µA VA1 = 0V, VA2 = 4V VA1 = 4V, VA2 = 0V -0.1 -100 µA Switch Input Capacitance CIS(OFF) From Source to GND ( Notes 7, 8) 28 pF Driver Input Capacitance CC1 V A = 0V (Notes 7, 8) 10 pF Driver Input Capacitance CC2 V A = 15V (Notes 7, 8) 10 pF Switch Output COS Measured Drain to GND ( Notes 7, 8) 28 pF Off Isolation V ISO VGEN = 1Vp-p, f = 1MHz (Notes 7, 8) 40 dB Cross Talk V CR VGEN = 1Vp-p, f = 1MHz (Notes 7, 8) 40 dB Charge Transfer Error V CTE VS = GND, CL= 0.01µF (Notes 7, 8) 15 mV Break-before-make Time Delay t OPEN RL = 300Ω, VS = 3V, VAH = 5V, VAL = 0V 10 50 300 ns Switch Turn “ON” Time t ON RL = 300Ω, VS = 3V, VAH = 4V, VAL = 0V 250 500 ns Switch Turn “OFF” Time t OFF RL = 300Ω, VS = 3V, VAH = 4V, VAL = 0V 200 450 ns Notes: 7. Limits established by characterization and are not production tested. 8. VAL = 0V and VAH = 4V. 9. Parameters with Min and/or Max limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested.
HS-303CEH 2. Specifications FN8399 Rev.4.00 Page 6 of 14 Jun.17.19
2.5 Post Radiation Characterist ics (Test Rate 50rad(Si)/s to 300rad(Si)/s
2.6 Post Radiation Characterist ics (Test Rate <10mrad(Si)/s
VSUPPLY = ±15V unless otherwise specified. This data is typical test data post radiation exposure at a rate of 50 to 300rad(Si)/s. This data shows typical parameter shifts due to total ionizing dose (high dose radiation) TA= +25°C. Symbol Parameter Test Conditions 0k 100k Unit +rDS(ON) “Switch On” Resistance V D = 10V, IS = -10mA 34 35 Ω -rDS(ON) “Switch On” Resistance V D = -10V, IS = 10mA 28 29 Ω +IS(OFF) Leakage Current into Source of an “OFF” Switch V S = +14V, VD = -14V -0.20 -0.31 nA VS = +15V, VD = -15V -0.003 -0.47 µA -IS(OFF) Leakage Current into Source of an “OFF” Switch V S = -14V, VD = +14V 0.30 0.84 nA VS = -15V, VD = +15V 0.001 0.02 µA +ID(OFF) Leakage Current into Drain of an “OFF” Switch V S = +14V, VD = -14V -1.20 -0.90 nA VS = +15V, VD = -15V -0.001 -0.001 µA -ID(OFF) Leakage Current into Drain of an “OFF” Switch V S = -14V, VD = +14V 0.31 0.90 nA VS = -15V, VD = +15V 0.0003 0.001 µA +ID(ON) Leakage Current from an “ON” Driver into the Switch (Drain and Source) -ID(ON) Leakage Current from an “ON” Driver into the Switch (Drain and Source) VS = -14V, VD = -14V 0.15 0.28 nA IAL Low Level Input Address Current All channels V A = 0.8V 0.35 0.25 nA IAH High Level Input Address Current All channels V A = 4.0V 1.98 1.47 nA I+ Positive Supply Current All channels V A = 0.8V 55 53 µA VA1 = 0V, VA2 = 4V VA1 = 4V, VA2 = 0V 167.2 113.7 µA I- Negative Supply Current All channels V A = 0.8V -0.01 -0.01 µA VA1 = 0V, VA2 = 4V VA1 = 4V, VA2 = 0V -0.01 -0.02 µA tOPEN Break-before-make Time Delay R L = 300Ω, VS = 3V, VAH = 5V, VAL = 0V 42 47 ns tON Switch Turn “ON” Time R L = 300Ω, VS = 3V, VAH = 4V, VAL = 0V 224 213 ns tOFF Switch Turn “OFF” Time R L = 300Ω, VS = 3V, VAH = 4V, VAL = 0V 192 173 ns VSUPPLY = ±15V unless otherwise specified. This data is typical test data post radiation exposure at a rate of <10mrad(Si)/s. This data shows typical parameter shifts due to total ionizing dose (low dose radiation). TA= +25°C. Parameter Symbol Test Conditions 0k 25k 50k 75k 100k Unit Leakage Current into Source of an “OFF” Switch Leakage Current into Source of an “OFF” Switch Leakage Current into Drain of an “OFF” Switch Leakage Current into Drain of an “OFF” Switch
HS-303CEH 2. Specifications FN8399 Rev.4.00 Page 7 of 14 Jun.17.19 Leakage Current from an “ON” Driver into the Switch (Drain and Source) Leakage Current from an “ON” Driver into the Switch (Drain and Source) Positive Supply Current I+ All channels V A = 0.8V 54 51 50 49 50 µA VA1 = 0V, VA2 = 4V VA1 = 4V, VA2 = 0V 185 146 129 116 106 µA VA1 = 0V, VA2 = 4V VA1 = 4V, VA2 = 0V Break-before-make Time Delay t OPEN RL = 300Ω, VS = 3V, VAH = 5V, VAL = 0V Switch Turn “ON” Time t ON RL = 300Ω, VS = 3V, VAH = 4V, VAL = 0V Switch Turn “OFF” Time t OFF RL = 300Ω, VS = 3V, VAH = 4V, VAL = 0V VSUPPLY = ±15V unless otherwise specified. This data is typical test data post radiation exposure at a rate of <10mrad(Si)/s. This data shows typical parameter shifts due to total ionizing dose (low dose radiation). TA= +25°C. (Continued) Parameter Symbol Test Conditions 0k 25k 50k 75k 100k Unit
Table 2. Die and Assembly Related Information
5 A/cm2
- Metallization Mask Layout
5.1 Layout Characteristics
Table 3. Layout X-Y Coordinates
Note: "Origin" as labeled in the Metallization Mask layout is the centroid of the pad labeled "IN1". Table 3. Layout X-Y Coordinates (Continued)
HS-303CEH 6. Revision History FN8399 Rev.4.00 Page 12 of 14 Jun.17.19 6. Revision History Date Revision Change Jun.17.19 FN8399.4 Applied new template. Updated single event effects description on page 1. Added related literature section on page 1. Added note 4 on page 3. Updated links. Removed About Intersil section. Mar.4.15 FN8399.3 On page 7, changed the transistor count from “2 16” to “348”. In Table 3 on page 10 , updated 2 pad names to match the “Metallization Mask Layout”: - Changed from “VEE” to “V-” and from “VCC” to “V+”. Dec.19.13 FN8399.2 Added ESD ratings to Abs Max Table on page 3 Apr.5.13 FN8399.1 Title on page 1 changed CMOS to BiCMOS Continuous Current in Absolute Maximum Ratings on page 3: changed from 30mA to 10mA “VSUPPLY = ±15V unless otherwise specified. This data is typical test data post radiation exposure at a rate of 50 to 300rad(Si)/s. This data shows typical parameter shifts due to total ionizing dose (high dose radiation) TA= +25°C.” on page 6 changed unit in positive supply current from mA to µA. Updated throughout 300krad to 100krad. Updated Ordering Information on page 2 Updated Electrical Spec Table MIN and MAX values for Leakage Current in Source and Drain for ±15V from ±5 to ±20 Updated in Post Radiation Characteristics Typical values on page 4 for Positive Supply Current for VA1, VA2 from 107.1 to 113.7 and Negative Supply Current for VA1, VA2 from -0.01 to -0.02 Added 100k column to Post Radiation Characteristics table on page 5 Removed negative symbol under 75k column IAL, IAH from 0.71, 0.28 and added negative symbol in I- to 0.019 in VA1, VA2 Removed the words exposed pad from Tjc note. Updated numbers in Table 2 in X(µm) column. Added Note to Table 2. December 21, 2012 FN8399.0 Initial Release
HS-303CEH 7. Package Outline Drawing FN8399 Rev.4.00 Page 13 of 14 Jun.17.19 7. Package Outline Drawing NOTES: 1. Index area: A notch or a pin one identification mark shall be locat- ed adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. Alternately, a tab (dimension k) may be used to identify pin one. 2. If a pin one identification mark is used in addition to a tab, the lim- its of dimension k do not apply. 3. This dimension allows for off-center lid, meniscus, and glass overrun. 4. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. The maximum lim- its of lead dimensions b and c or M shall be measured at the cen- troid of the finished lead surfaces, when solder dip or tin pla te lead finish is applied. 5. N is the maximum number of terminal positions. 6. Measure dimension S1 at all four corners. 7. For bottom-brazed lead packages, no organic or polymeric mate- rials shall be molded to the bottom of the package to cover the leads. 8. Dimension Q shall be measured at the point of exit (beyond the meniscus) of the lead from the body. Dimension Q minimum shall be reduced by 0.0015 inch (0.038mm) maximum when sol- der dip lead finish is applied. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling dimension: INCH. -D- -C-
0.004 H A - BM DS S
-A- -B-
0.036 H A - BM DS S
e E A Q L D A SEATING AND LE2 E3 E3 BASE PLANE -H- b C M (c) (b) SECTION A-A BASE LEAD FINISH METAL PIN NO. 1 ID AREA A M K14.A MIL-STD-1835 CDFP3-F14 (F-2A, CONFIGURATION B)
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
A 0.045 0.115 1.14 2.92 - b 0.015 0.022 0.38 0.56 - b1 0.015 0.019 0.38 0.48 - c 0.004 0.009 0.10 0.23 - c1 0.004 0.006 0.10 0.15 - D - 0.390 - 9.91 3 E 0.235 0.260 5.97 6.60 - E 1 -0 . 2 9 0-7 . 1 13 E3 0.030 - 0.76 - 7 e 0.050 BSC 1.27 BSC - k 0.008 0.015 0.20 0.38 2 L 0.270 0.370 6.86 9.40 - Q 0.026 0.045 0.66 1.14 8 S1 0.005 - 0.13 - 6 N1 4 1 4- Rev. 0 5/18/94 For the most recent package outline drawing, see K14.A.
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