HS-245RH_03 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • Electrically Screened to SMD # 5962-96722 and 5962-96723
  • QML Qualified per MIL-PRF-38535 Requirements
  • Radiation Hardened DI Processing - Latchup Free

12 N/cm2

  • Replaces HD-245/246/248
  • Current Mode Operation
  • High Noise Immunity
  • Low EMI Generation
  • Low Power Dissipation
  • High Common Mode Rejection
  • Transmitter and Receiver Party Line Capability
  • Tolerates -2.0V to +20.0V Ground Differential (Transmitter with Respect to Receiver)
  • Transmitter Input/Receiver Output TTL/DTL Compatible PART NO. INPUT OUTPUT HS-246RH 100 Ω Open Collector HS-248RH Hi-Z 6K Pull-Up Resistors

Ordering Information

MKT. NUMBER TEMP. RANGE (oC) 5962R9672201QCC HS1-245RH-8 -55 to 125 5962R9672201QXC HS9-245RH-8 -55 to 125 5962R9672201VCC HS1-245RH-Q -55 to 125 5962R9672201VXC HS9-245RH-Q -55 to 125 HS9-245RH/PROTO HS9-245RH/PROTO -55 to 125 5962R9672301QCC HS1-246RH-8 -55 to 125 5962R9672301QXC HS9-246RH-8 -55 to 125 5962R9672301VCC HS1-246RH-Q -55 to 125 5962R9672301VXC HS9-246RH-Q -55 to 125 5962R9672302QCC HS1-248RH-8 -55 to 125 5962R9672302QXC HS9-248RH-8 -55 to 125 5962R9672302VCC HS1-248RH-Q -55 to 125 5962R9672302VXC HS9-248RH-Q -55 to 125 Data Sheet April 2003

required to charge the transmission line capacitance. transmission lines is to use a current mode transmitter. transmission line and requires very little change in voltage. 25mW for the transmitter and 15mW for the receiver. the transmitter and receivers are outlined in Table A. FIGURE 3. TYPICAL APPLICATION Design Information section of this data sheet.

transmitter may be connected to a line for time sharing. well as requiring very little power supply current. used to increase the data rate on long transmission lines.

100 Open Collector

FIGURE 4. TYPICAL DATA TRANSMISSION SYSTEM

pair lines can share the same shield without crosstalk. transmitter, a terminating receiver and a party-line receiver. connecting each line to the ground return shield. cannot be detected by the receiver. twisted pair line with a characteristic impedance of 100Ω. determined for any length of line. shield and through the complete shielded, twisted pair cable. signals applied to the transmitter. FIGURE 5. TRANSMISSION LINE WAVE-SHAPING

DIE DIMENSIONS: 45 mils x 45 mils x 11 mils 1140µm x 1140µm x 280µm INTERFACE MATERIALS: Glassivation: Type: Silox Thickness: 8k Å ±1kÅ Top Metallization: Type: Aluminum Thickness: 12.5kÅ ±2kÅ Substrate: HFSB Bipolar/Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased ADDITIONAL INFORMATION: Worst Case Current Density: 7.8 x 10

4 A/cm2

Transistor Count: Metallization Mask Layout HS-245RH OUTPUT f1 INPUT f1 VCC INPUT f2 OUTPUT f2 INPUT f2 INPUT f1 OUTPUT f1 SUBSTRATE GND OUTPUT f2 INPUT f2 OUTPUT f2 OUTPUT f1 INPUT f1 HS-245RH, HS-246RH, HS-248RH

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that da ta sheets are current before placing orders. Information furnishe d by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com Die Characteristics DIE DIMENSIONS: 45 mils x 47 mils x 11 mils 1140µm x 1190µm x 280µm INTERFACE MATERIALS: Glassivation: Type: Silox Thickness: 8k Å ±1kÅ Top Metallization: Type: T.W. Thickness: 2.5k Å ±0.5kÅ Type: Al Thickness: 14k Å ±2kÅ Substrate: ALPS Bipolar/Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased ADDITIONAL INFORMATION: Worst Case Current Density: 1.4 x 10

5 A/cm2

Transistor Count: Metallization Mask Layout HS-246RH HS-248RH OUTPUT R1 (-) INPUT (+) INPUT OUTPUT R2 GND (-) INPUT (+) INPUT VEE R1 AND R2 VEE R3 OUTPUT R3 (+) INPUT (-) INPUT VCC R1 AND R2 VCC R3 VEE R1 AND R2 VEE R3 OUTPUT R3 (+) INPUT (-) INPUT VCC R1 AND R2 VCC R3 OUTPUT R1 (-) INPUT (+) INPUT OUTPUT R2 GND (-) INPUT (+) INPUT HS-245RH, HS-246RH, HS-248RH