HS-139RH-T INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • QML Qualified Per MIL-PRF-38535 Requirements
  • Radiation Environment - Latch-up Free Under Any Conditions

5 RAD(Si)

  • 100V Output Voltage Withstand Capability
  • Differential Input Voltage Range Equal to the Supply Voltage
  • Input Offset Voltage (V

Applications

  • Pulse Generators
  • Timing Circuitry
  • Level Shifting
  • Analog to Digital Conversion Pinouts HS-139RH-T (SBDIP), CDIP2-T14 TOP VIEW HS-139RH-T (FLATPACK), CDFP3-F14 TOP VIEW

Ordering Information

ORDERING NUMBER PART NUMBER TEMP. RANGE (oC) 5962R9861301TCC HS1-139RH-T -55 to 125 5962R9861301TXC HS9-139RH-T -55 to 125 NOTE: Minimum order quantity for -T is 150 units through distribution, or 450 units direct. OUT 2 OUT 1 - IN 1 + IN 1 - IN 2 + IN 2 OUT 3 OUT 4 GND + IN 4 - IN 4 + IN 3 - IN 3 1OUT 2 OUT 1 - IN 1 + IN 1 - IN 2 - IN 2 OUT 3 OUT 4 GND + IN 4 - IN 4 + IN 3 - IN 3 Data Sheet July 1999 File Number 4646.1

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Die Characteristics DIE DIMENSIONS: 3750µm x 2820µm (148 mils x 111 mils) 483µm ± 25.4µm (19 mils± 1 mil) INTERFACE MATERIALS Glassivation Type: Nitride (Si3N4) over Silox (SiO2 Nitride Thickness: 4.0kA +/- 0.5kA Silox Thickness: 12.0kA +/- 1.3kA Top Metallization Type: AL Si Cu Thickness: 16.0kA +/- 2kA Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density: <2.0 x 10

5 A/cm2

Transistor Count: Metallization Mask Layout HS-139RH-T GND +IN4 -IN4 V+ -IN1 +IN1 +IN3 -IN3 +IN2 -IN2 OUT4 OUT3 OUT2 OUT1 (9) (8) (7) (6) (5)(4)(3) (2) (1) (14) (13) (12) (11) (10) HS-139RH-T