HS-1254RH INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • QML Qualified Per MIL-PRF-38535 Requirements
  • Radiation Environment
  • Wide -3dB Bandwidth (A

Applications

  • High Speed A/D Drivers
  • Cable Drivers
  • Wideband Signal Switching and Routing
  • Redundant Circuit Multiplexing
  • Pulse Amplifiers

Description

The HS-1254RH is a ±5V, Rad Hard, monolithic, dual, current feedback amplifier that provides highly reliable performance in harsh radiation environments. Dielectric isolation and bonded wafer processing make this device immune to latch-up (SEL). Excellent dynamic characteristics, coupled with the disable function, make this amplifier well-suited for a variety of satel- lite system applications. The outputs have individual disable control pins that make it easy to multiplex wideband signals, putting the outputs in a high impedance mode and reducing the supply current per op amp down to 3mA (typical). Post radiation limits are fully specified and guaranteed to 300kRAD(Si) total dose to ensure predictable performance in any space application. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). SMD numbers must be used when ordering. Detailed Electrical Specifications for the HS-1254RH are contained in SMD 5962-98581, which is easily down- loadable from our website, via a DSCC “hot-link”. http://www.semi.intersil.com/data/sm/index.htm Pinout HS-1254RH (FLATPACK) TOP VIEW

Ordering Information

SMD PART NUMBER INTERSIL PART NUMBER TEMP. RANGE ( oC) PACKAGE CASE OUTLINE 5962R9858101VXC HS9-1254RH-Q -55 to 125 14 Ld Flatpack CDFP3-F14 N/A HS9-1254RH/Sample 25 14 Ld Flatpack CDFP3-F14 -IN1 +IN1 DISABLE 1 DISABLE 2 +IN2 -IN2 OUT2 OUT1 NC NC GND NC File Number 4507CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207| Copyright © Intersil Corporation 1999

Size: 1750µm x 2330µm (69 mils x 92 mils) Thickness: 483µm (19 mils) GLASSIVATION Type: Nitride Thickness: 4kÅ ± 0.5kÅ METALLIZATION Metal 1 Type: AlCu(2%)/TiW Thickness: 8kÅ ± 0.4kÅ Metal 2 Type: AlCu(2%) Thickness: 16kÅ ± 0.8kÅ SUBSTRATE DI, Bonded Wafer BACKSIDE FINISH Silicon SUBSTRATE POTENTIAL Floating (Recommend connection to V-) TRANSISTOR COUNT: 180 Metallization Mask Layout HS-1254RH NOTE: 1. This is an optional GND pad. Users may set a GND reference, via this pad, to ensure the TTL compatibility of theDISABLE inputs when using asymmetrical supplies (e.g., V+ = 10V, V- = 0V). -IN1 OUT1 -IN2 GND (SEE NOTE 1) OUT2 NC NC +IN1 +IN2 DISABLE1 DISABLE2 HS-1254RH

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli- able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 HS-1254RH