HS-1135RH INTERSIL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Features
- Electrically Screened to SMD # 5962-96767
- QML Qualified per MIL-PRF-38535 Requirements
- User Programmable Output Voltage Limiting
Applications
- Flash A/D Driver
- Video Switching and Routing
- Pulse and Video Amplifiers
- Wideband Amplifiers
- RF/IF Signal Processing
- Imaging Systems Pinout HS-1135RH GDIP1-T8 (CERDIP) OR CDIP2-TI (SBDIP) TOP VIEW
Ordering Information
MKT. NUMBER TEMP. RANGE (oC) 5962F9676701VPA HS7-1135RH-Q -55 to 125 5962F9676701VPC HS7B-1135RH-Q -55 to 125 HS7-1135RH/PROTO HS7-1135RH/PROTO -55 to 125 NC -IN +IN VH OUT VL Data Sheet August 1999 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
NOTES: 1. R1 = 1kΩ ,±5% (Per Socket) 2. R2 = 10kΩ ,±5% (Per Socket) 3. C1 = 0.01µF (Per Socket) or 0.1µF (Per Row) Minimum 4. D1 = 1N4002 or Equivalent (Per Board) 5. D2 = 1N4002 or Equivalent (Per Socket) 6. V+ = +5.5V±0.5V 7. V- = -5.5V±0.5V Irradiation Circuit HS-1135RH CERDIP NOTES: 8. R1 = 1kΩ ,±5% 9. R2 = 10kΩ ,±5% 10. C1 = C2 = 0.01µF C 1 D 1 D 1 C 1 D 2 D 2 R 2 R 1 R 1 +- C 1 C 2 R 2 R 1 R 1 HS-1135RH
All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitewww.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Die Characteristics DIE DIMENSIONS: 59 mils x 58.2 mils x 19 mils±1 mil 1500µm x 1480µm x 483µm ±25.4µm INTERFACE MATERIALS: Glassivation: Type: Nitride Thickness: 4kÅ ±0.5kÅ Top Metallization: Type: Metal 1: AICu(2%)/TiW Thickness: Metal 1: 8kÅ ±0.4kÅ Type: Metal 2: AICu(2%) Thickness: Metal 2: 16kÅ ±0.8kÅ Substrate: UHF-1, Bonded Wafer, DI ASSEMBLY RELATED INFORMATION: Substrate Potential: Floating ADDITIONAL INFORMATION: Worst Case Current Density: < 2 x 105A/cm2 Transistor Count: Metallization Mask Layout HS-1135RH OUT +IN -IN VL VH HS-1135RH