HS-1100RH INTERSIL | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • Electrically Screened to SMD # 5962-94676
  • QML Qualified per MIL-PRF-38535 Requirements

Applications

  • Video Switching and Routing
  • Pulse and Video Amplifiers
  • Wideband Amplifiers
  • RF/IF Signal Processing
  • Flash A/D Driver
  • Imaging Systems Pinout HS-1100RH GDIP1-T8 (CERDIP) OR CDIP2-T8 (SBDIP) TOP VIEW

Ordering Information

MKT. NUMBER TEMP. RANGE (oC) 5962F9467602VPA HS7-1100RH-Q -55 to 125 5962F9467602VPC HS7B-1100RH-Q -55 to 125 HFA1100IJ (Sample) HFA1100IJ -40 to 85 HFA11XXEVAL Evaluation Board NC -IN +IN NC OUT NC Data Sheet August 1999 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

Output Voltage A V = -1, RL = 100Ω 25oC ±3.3 V AV = -1, RL = 100Ω Full ±3.0 V Output Current (Note 1) A V = -1, RL = 50Ω 25oC to 125oC ±65 mA AV = -1, RL = 50Ω -55oC to 0oC ±50 mA DC Closed Loop Output Resistance 25 oC 0.1 W Quiescent Supply Current (Note 1) RL = Open Full 24 mA -3dB Bandwidth (Note 1) A V = -1, RF = 430Ω , VOUT = 200mVP-P 25oC 580 MHz AV = +1, RF = 510Ω , VOUT = 200mVP-P 25oC 850 MHz AV = +2, RF = 360Ω , VOUT = 200mVP-P 25oC 670 MHz Slew Rate A V = +1, RF = 510Ω , VOUT = 5VP-P 25oC 1500 V/ µs AV = +2, VOUT = 5VP-P 25oC 2300 V/ µs Full Power Bandwidth V OUT = 5VP-P 25oC 220 MHz Gain Flatness (Note 1) To 30MHz, R F = 510Ω 25oC ±0.014 dB To 50MHz, RF = 510Ω 25oC ±0.05 dB To 100MHz, RF = 510Ω 25oC ±0.14 dB Linear Phase Deviation (Note 1) To 100MHz, RF = 510Ω 25oC ±0.6 Degrees 2nd Harmonic Distortion (Note 1) 30MHz, VOUT = 2VP-P 25oC -55 dBc 50MHz, VOUT = 2VP-P 25oC -49 dBc 100MHz, VOUT = 2VP-P 25oC -44 dBc 3rd Harmonic Distortion (Note 1) 30MHz, VOUT = 2VP-P 25oC -84 dBc 50MHz, VOUT = 2VP-P 25oC -70 dBc 100MHz, VOUT = 2VP-P 25oC -57 dBc 3rd Order Intercept (Note 1) 100MHz, R F = 510Ω 25oC 30 dBm 1dB Compression 100MHz, R F = 510Ω 25oC 20 dBm Reverse Isolation (S12) 40MHz, R F = 510Ω 25oC -70 dB 100MHz, RF = 510Ω 25oC -60 dB 600MHz, RF = 510Ω 25oC -32 dB Rise and Fall Time V OUT = 0.5VP-P 25oC 500 ps VOUT = 2VP-P 25oC 800 ps Overshoot (Note 1) V OUT = 0.5VP-P, Input tR /tF = 550ps 25 oC1 1 % Settling Time (Note 1) To 0.1%, V OUT = 2V to 0V, RF = 510Ω 25oC1 1 n s To 0.05%, VOUT = 2V to 0V, RF = 510Ω 25oC1 9 n s To 0.02%, VOUT = 2V to 0V, RF = 510Ω 25oC3 4 n s Differential Gain A V = +2, RL = 75Ω , NTSC 25 oC 0.03 % Differential Phase A V = +2, RL = 75Ω , NTSC 25 oC 0.05 Degrees Overdrive Recovery Time R F = 510Ω , VIN = 5VP-P 25oC 7.5 ns NOTE: 1. See Typical Performance Curves for more information. Typical Performance Characteristics (Continued) Device Characterized at: VSUPPL Y =±5V, RF = 360Ω , AV = +2V/V, RL = 100Ω , Unless Otherwise Specified PARAMETERS CONDITIONS TEMPERATURE TYPICAL UNITS HS-1100RH

FIGURE 15. SETTLING RESPONSE (A V = +2, VOUT = 2V) FIGURE16. 3RDORDERINTERMODULATIONINTERCEPT FIGURE 17. 2ND HARMONIC DISTORTION vs P OUT FIGURE 18. 3RD HARMONIC DISTORTION vs P OUT FIGURE 19. OVERSHOOT vs INPUT RISE TIME (AV = +1) FIGURE 20. OVERSHOOT vs INPUT RISE TIME (A V = +2)

30 OVERSHOOT (%)

SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE AV = +1 TEST CIRCUIT A V = +2 TEST CIRCUIT LARGE SIGNAL WAVEFORM SMALL SIGNAL WAVEFORM NOTES: 2. Unless otherwise noted, component value multiplier and tolerances shall be as follows: Resistors,Ω± 1%. Capacitors,µF ±10% 3. Chip Components Recommended. ICC 10 0.1 DUT 510 VIN HA-5177 200pF 100K (0.01%) VZ VX X100 + 470pF VIO = VX 100 +IBIAS = VZ 100K 10 0.1 IEE -IBIAS = VX 50K K 3 100 100 VOUT 0.1 100 0.1 NC 510 0.1 510 510 0.1 K 2 K 2 = POSITION 1: K 2 = POSITION 2: 0.1 +VIN R S 50Ω V+ (+5V) R F 510Ω V- (-5V) VOUT 50Ω50Ω 2 - +VIN R S 50Ω R F V+ (+5V) V- (-5V) 360Ω R G 360Ω VOUT 50Ω50Ω 2 +2.5V -SR +2.5V +SR VOUT -2.5V -2.5V 90% 10% 90% 10% 90% 10% 90% 10% +250mV TF, -OS +250mV TR , +OS VOUT -250mV -250mV HS-1100RH

NOTES: 4. R1 = R2 = 1kΩ ,±5% (Per Socket). 5. R3 = 10kΩ ,±5% (Per Socket). 6. C1 = C2 = 0.01µF (Per Socket) or 0.1µF (Per Row) Min. 7. D1 = D2 = 1N4002 or Equivalent (Per Board). 8. D3 = D4 = 1N4002 or Equivalent (Per Socket). Irradiation Circuit HS-1100RH CERDIP NOTES: 13. C1 = C2 = 0.1µF. C 1 D 1 D 2 C 2 D 4 D 3 R 3 R 2 R 1 -+ C 1 C 2 D 3 R 3 R 2 R 1 -+ HS-1100RH

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Die Characteristics DIE DIMENSIONS: 63 mils x 44 mils x 19 mils±1 mil (1600µm x 1130µm x 483µm ±25.4µm) INTERFACE MATERIALS: Glassivation: Type: Nitride Thickness: 4kÅ ±0.5kÅ Top Metallization: Type: Metal 1: AICu(2%)/TiW Thickness: Metal 1: 8kÅ ±0.4kÅ Type: Metal 2: AICu (2%) Thickness: Metal 2: 16kÅ ±0.8kÅ Substrate: UHF-1, Bonded Wafer, DI ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): Floating ADDITIONAL INFORMATION: Worst Case Current Density: 1.6 x 105 A/cm2 Transistor Count: Metallization Mask Layout HS-1100RH +IN VL BAL OUT -IN BAL VH HS-1100RH