HS55B120P HUIXIN | Alldatasheet
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Parameter Symbol Value Unit Storage junction temperature range Tstg -40-150 ℃ Operating junction temperature range Tj -40-125 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 1200 V Repetitive peak reverse voltage (Tj=25℃) VRRM 1200 V Average on-state current (TC≤60℃) IT(AV) 35 A RMS on-state current (TC≤60℃) IT(RMS) 55 A Non repetitive surge peak on-state current (tp=10ms, Tj=25℃) ITSM 700 A Non repetitive surge peak on-state current (tp=8.3ms, Tj=25℃) 750 I2t value for fusing (tp=10ms , Tj=25℃) I2t 2450 A2s Critical rate of rise of on-state current (IG=2×IGT, f=100Hz , Tj=125℃) dI/dt 200 A/μs Symbol Value Unit IT(RMS) 55 A VDRM/VRRM 1200 V IGT ≤50 mA HS55B120P 55A SCR Rev.01 DESCRIPTION: With high ability to withstand the shock loading of large current, HS55B120P SCR provides high dV/dt rate with strong resistance to electromagnetic interference.It is especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. From all three terminals to external heatsink,HS55B120P provides a rated insulation voltage of 2500 VRMS. Package TO-3P is RoHS compliant. 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 1of 4
Peak gate current (tp=20μs , Tj=125℃) IGM 10 A Average gate power dissipation (Tj=125℃) PG(AV) 1 W Peak gate power PGM 20 W Peak pulse voltage (Tj=25℃; non-repetitive,off-state;FIG.7) Vpp 0.7 kV ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Value Unit MIN. TYP. MAX. IGT VD=12V RL=33Ω - - 50 mA VGT - - 1 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ 0.2 - - V IL IG=1.2IGT - - 120 mA IH IT=500mA - - 100 mA dV/dt VD=800V Gate Open Tj=125℃ 1200 - - V/μs ton IG=50mA IA=500mA IR=50mA Tj=25℃ - 4 - μs toff - 130 - STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM ITM=80A tp=380μs Tj=25℃ 1.5 V VTO Threshold voltage Tj=125℃ 0.76 V RD Dynamic resistance Tj=125℃ 8.5 mΩ IDRM VD=VDRM VR=VRRM Tj=25℃ 10 μA IRRM Tj=125℃ 6 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case(DC) 0.85 ℃/W Rth(j-a) junction to ambient (DC) 55 ℃/W 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 2of 4
FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature 100 0 11 22 33 44 55 66 P(W) IT(RMS) (A) 60℃ 0 25 50 75 100 125 IT(RMS) (A) TC(℃) FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics 100 200 300 400 500 600 700 800 ITSM(A) Number of cycles Tc=25℃,tp=10ms,one cycle,half-sine 100 0 0.5 1 1.5 2 ITM(A) VTM(V) Tj=25℃typ Tj=25℃max Tj=125℃typ FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t (dI/dt<200A/μs) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature dI/dt ITSM I2t 100 1000 0.01 0.1 1 10 ITSM(A), I2t(A2s) tp(ms) 0.5 1.5 2.5 -40 -20 0 20 40 60 80 100 120 140 Tj(℃) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) IGT IL&IH 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 3of 4
FIG.7：Test circuit for inductive and resistive loads to IEC-61000-4-5 standards. AC INPUT Filtering Unit IEC61000-4-5 Standards Surge Generator 1.2/50μS voltage surge 8/20μS current surge RGen RG 300Ω PACKAGE MECHANICAL DATA 2-R0.5 H P E Φ4.05-4.25mm K L B A D F G J R C Dimensions Millimeters InchesRef. A B C D E F G H J K L P R 4.40 1.45 14.35 0.50 4.60 1.55 15.60 0.70 0.173 0.057 0.565 0.020 0.181 0.061 0.614 0.028 2.70 2.90 20.40 1.10 1.40 0.043 0.055 2.80 3.00 0.110 0.118 0.106 0.114 15.80 16.50 0.622 0.650 21.10 0.803 0.831 15.10 15.50 0.594 0.610 4.35 0.171 5.40 5.65 0.213 0.222 1.25 1.45 0.049 0.057 M M 12.37 12.77 0.487 0.503 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 4of 4