HS40B80P HUIXIN | Alldatasheet

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40A TRIAC Rev.01 DESCRIPTION: The HS40B80P triac is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as heating regulation, induction motor starting circuits, for phase control operation in light dimmers, motor speed controllers. HS40B80P snubberless triac is especially recommended for use on inductive loads. By using an internal ceramic pad, HS40B80P provides a rated insulation voltage of 2500 VRMS. Package TO-3P is RoHS compliant. MAIN FEATURES ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range T stg -40-150 ℃ Operating junction temperature range T j -40-125 ℃ Repetitive peak off-state voltage (Tj=25℃) V DRM 800 V Repetitive peak reverse voltage (Tj=25℃) V RRM 800 V RMS on-state current (TC≤81℃) IT(RMS) 40 A Non repetitive surge peak on-state current (full cycle , tp=20ms , Tj=25℃) ITSM 420 A Non repetitive surge peak on-state current (full cycle , tp=16.6ms , Tj=25℃) 462 I2t value for fusing (tp=10ms , Tj=25℃) I 2t 1000 A2s Critical rate of rise of on-state current (IG=2×IGT , f=100Hz , Tj=125℃) dI/dt 100 A/μs Peak gate current (tp=20μs , Tj=125℃) I GM 8 A Symbol Value Unit IT(RMS) 40 A VDRM /VRRM 800 V IGTⅠ/Ⅱ/Ⅲ 50/50/50 mA 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 1of 4

Average gate power dissipation (Tj=125℃) P G(AV) 0 .5 W Peak gate power PGM 40 W Peak pulse voltage (Tj=25℃; non-repetitive,off-state;FIG.7) Vpp 1 .5 k V ELECTRICAL CHARACTERISTICS(Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit IGT VD =12V RL =33Ω Ⅰ-Ⅱ-Ⅲ MAX. 50 mA VGT Ⅰ-Ⅱ-Ⅲ MAX. 1.3 V VGD VD =VDRM Tj=125℃ RL =3.3KΩ Ⅰ-Ⅱ-Ⅲ MIN. 0.2 V IL IG=1.2IGT Ⅰ-Ⅲ MAX. mA Ⅱ 200 IH IT =500mA MAX. 100 mA dV/dt V D=540V Gate Open Tj=125℃ MIN. 2000 V/μs (dI/dt)c (dV/dt)c=20V/μs T j=125℃ MIN. 25 A/ms ton IG=80mA IA=400mA IR=40mA Tj=25℃ TYP. μs toff 70 STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM I TM =60A tp=380μs T j=25℃ 1 .4 V VTO Threshold voltage T j=125℃ 0.73 V RD Dynamic resistance T j=125℃ 10 mΩ IDRM VD=VDRMVR =VRRM Tj=25℃ 5 μ A IRRM Tj=125℃ 5 m A THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case (AC) 0.85 ℃/W Rth(j-a) junction to ambient (AC) 50 ℃/W 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 2of 4

FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature 0 8 16 24 32 40 48 P(W) IT(RMS)(A) 81℃ 02 55 07 5 1 0 0 1 2 5 IT(RMS)(A) TC(℃) FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics 100 150 200 250 300 350 400 450 ITSM(A) Number of cycles Tc=25℃,tp=20ms,one cycle,sine 100 00 . 511 . 52 ITM(A) VTM(V) Tj=25℃typ Tj=25℃max Tj=125℃typ FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms, and corresponding value of I2t (dI/dt<100A/μs) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature dI/dt ITSM I2t 100 1000 10000 0.01 0.1 1 10 tp(ms) ITSM(A), I2t(A2s) 0.5 1.5 2.5 ‐ 4 0 ‐ 2 002 04 06 08 0 1 0 0 1 2 0 1 4 0 Tj(℃) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) IGT(I/II)&IH IGT(III) IL 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 3of 4

FIG.7：Test circuit for inductive and resistive loads to IEC-61000-4-5 standards AC INPUT Filtering Unit IEC61000-4-5 Standards Surge Generator 1.2/50μS voltage surge 8/20μS current surge RGen RG 300Ω PACKAGE MECHANICAL DATA 2-R0.5 H P E Φ4.05-4.25mm K L B A D F G J R C Dimensions Millimeters InchesRef. A B C D E F G H J K L P R 4.40 1.45 14.35 0.50 4.60 1.55 15.60 0.70 0.173 0.057 0.565 0.020 0.181 0.061 0.614 0.028 2.70 2.90 20.40 1.10 1.40 0.043 0.055 2.80 3.00 0.110 0.118 0.106 0.114 15.80 16.50 0.622 0.650 21.10 0.803 0.831 15.10 15.50 0.594 0.610 4.35 0.171 5.40 5.65 0.213 0.222 1.25 1.45 0.049 0.057 M M 12.37 12.77 0.487 0.503 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 4of 4