HS2DAL TSC | Alldatasheet

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Technical content

HS2DAL – HS2MAL Taiwan Semiconductor

1 Version: C2103

2A, 200V - 1000V High Efficient Surface Mount Rectifier

FEATURES

  • Glass passivated chip junction
  • Ideal for automated placement
  • Low power loss, high efficiency
  • Fast switching for high efficiency
  • Low profile package
  • Moisture sensitivity level: level 1, per J-STD-020
  • RoHS Compliant
  • Halogen-free according to IEC 61249-2-21

APPLICATIONS

  • DC to DC converter
  • Switching mode converters and inverters
  • Freewheeling application MECHANICAL DATA
  • Case: Thin SMA
  • Molding compound meets UL 94V-0 flammability rating
  • Terminal: Matte tin plated leads, solderable per J-STD-002
  • Meet JESD 201 class 2 whisker test
  • Polarity: Indicated by cathode band
  • Weight: 0.029g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT IF 2 A VRRM 200 - 1000 V IFSM 60 A TJ MAX 150 °C Package Thin SMA Configuration Single die Thin SMA ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL HS2DAL HS2GAL HS2JAL HS2KAL HS2MAL UNIT Marking code on the device HS2DAL HS2GAL HS2JAL HS2KAL HS2MAL Repetitive peak reverse voltage VRRM 200 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 140 280 420 560 700 V Forward current IF 2 A Surge peak forward current single half sine wave superimposed on rated load t = 8.3ms IFSM 60 A t = 1.0ms 120 A Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C

HS2DAL – HS2MAL Taiwan Semiconductor

2 Version: C2103

Junction-to-lead thermal resistance RӨJL 17 °C/W Junction-to-ambient thermal resistance RӨJA 53 °C/W Junction-to-case thermal resistance RӨJC 21 °C/W Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage(1) HS2DAL IF = 1A, TJ = 25°C VF 0.81 - V IF = 2A, TJ = 25°C 0.87 1.00 V IF = 1A, TJ = 125°C 0.67 - V IF = 2A, TJ = 125°C 0.74 0.82 V HS2GAL IF = 1A, TJ = 25°C 0.90 - V IF = 2A, TJ = 25°C 0.99 1.30 V IF = 1A, TJ = 125°C 0.76 - V IF = 2A, TJ = 125°C 0.86 0.96 V HS2JAL IF = 1A, TJ = 25°C 1.00 - V IF = 2A, TJ = 25°C 1.10 1.70 V IF = 1A, TJ = 125°C 0.80 - V IF = 2A, TJ = 125°C 0.92 1.10 V HS2KAL HS2MAL IF = 1A, TJ = 25°C 1.30 - V IF = 2A, TJ = 25°C 1.48 1.70 V IF = 1A, TJ = 125°C 0.94 - V IF = 2A, TJ = 125°C 1.11 1.23 V Reverse current @ rated VR (2) TJ = 25°C IR - 1 µA TJ = 125°C - 80 µA Reverse recovery time HS2DAL HS2GAL IF = 0.5A, IR = 1.0A, Irr = 0.25A trr - 50 ns HS2JAL HS2KAL HS2MAL - 75 ns Junction capacitance HS2DAL 1MHz, VR = 4.0V CJ 32 - pF HS2GAL 25 - pF HS2JAL 17 - pF HS2KAL HS2MAL 12 - pF Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms

HS2DAL – HS2MAL Taiwan Semiconductor

3 Version: C2103

ORDERING INFORMATION

ORDERING CODE(1) PACKAGE PACKING HS2xAL Thin SMA 14,000 / Tape & Reel Notes: 1. "x" defines voltage from 200V(HS2DAL) to 1000V(HS2MAL)

HS2DAL – HS2MAL Taiwan Semiconductor

4 Version: C2103

(TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics Fig.5 Typical Reverse Characteristics Fig.6 Typical Forward Characteristics 25 50 75 100 125 150 100 1000 1 10 100 f=1.0MHz Vsig=50mVp-p HS2DAL HS2GAL HS2JAL HS2KAL - HS2MAL 0.001 0.01 0.1 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=150°C 0.1 Pulse width 300μs 1% duty cycle TJ=25°C TJ=125°C TJ=-55°C TJ=150°C 0.001 0.01 0.1 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=150°C 0.1 Pulse width 300μs 1% duty cycle TJ=25°C TJ=125°C TJ=-55°C TJ=150°C CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) AVERAGE FORWARD CURRENT (A) REVERSE VOLTAGE (V) LEAD TEMPERATURE (°C) INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) HS2DAL HS2DAL HS2GAL HS2GAL

HS2DAL – HS2MAL Taiwan Semiconductor

5 Version: C2103

(TA = 25°C unless otherwise noted) Fig.7 Typical Reverse Characteristics Fig.8 Typical Forward Characteristics Fig.9 Typical Reverse Characteristics Fig.10 Typical Forward Characteristics Fig.11 Typical Transient Thermal Impedance 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=150°C 0.1 Pulse width 300μs 1% duty cycle TJ=25°C TJ=125°C TJ=-55°C TJ=150°C 0.01 0.1 100 1000 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=150°C 0.1 Pulse width 300μs 1% duty cycle TJ=25°C TJ=125°C TJ=-55°C TJ=150°C 0.01 0.1 100 INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) PULSE DURATION (s) TRANSIENT THERMAL IMPEDANCE (°C/W) INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) HS2JAL HS2JAL HS2KAL – HS2MAL HS2KAL – HS2MAL

HS2DAL – HS2MAL Taiwan Semiconductor

6 Version: C2103

PACKAGE OUTLINE DIMENSIONS Thin SMA SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code YW = Date Code F = Factory Code

HS2DAL – HS2MAL Taiwan Semiconductor

7 Version: C2103

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