HS-3530RH INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • Radiation Environment - Neutron Fluence (Φ ) 5 x 1012 n/cm2 (E≥ 10KeV) - Gamma Rate 1 x 10 9 RAD (Si)/s - Gamma Dose ( γ) 1 x 106 RAD (Si)
  • Wide Range AC Programming - Slew Rate 0.06 to 3V/µs - Gain X Bandwidth 100kHz to 5.0MHz
  • Wide Range DC Programming - Power Supply Range±3.0V to±15V
  • Supply Current 10µA to 1.2mA
  • Dielectrically Isolated Device Islands
  • Short Circuit Protection

Description

The HS-3530RH is a Low Power Operational Amplifier which is an internally compensated monolithic device offering a wide range of performance specifications. Parameters such as power dissipation, slew rate, bandwidth, noise and input DC parameters are programmed by selecting an external resistor or current source. Supply voltages as low as±3V may be used with little degradation of AC performance. The HS-3530RH has been specifically designed to meet exposure to space radiation environments. Operation from -55 oC to +125oC is guaranteed. A major advantage of the HS-3530RH is that operating characteristics remain virtually constant over a wide supply range (±3V to±15V), allowing the amplifier to offer maximum performance in almost any system, including battery operated equipment. A primary application for this device is in active filtering and conditioning for a wide variety of signals that differ in frequency and amplitude. Also, by modulating the set current, it can be used for designs such as current controlled oscillators/modulators, sample and hold circuits and variable active filters.

Ordering Information

HS2-3530RH-8 -55 oC to +125oC 8 Lead Metal Can HS2-3530RH-Q -55 oC to +125oC 8 Lead Metal Can HS2-3530RH/SAMPLE +25 oC 8 Lead Metal Can (γ) August 1995 Spec Number 518079 File Number 3024.2 DB NA

Specifications HS-3530RH Absolute Maximum Ratings Reliability Information oC oC Thermal Resistance θJA θJC Maximum Package Power Dissipation at +125oC Ambient: If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions VINcm ≤ 1/2 (V+ - V-) RL ≥ 2kV TABLE 1A. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: Supply Voltage =±15V, RSOURCE = 100Ω , RLOAD = 500kΩ , VOUT = 0V, Unless Otherwise Specified. PARAMETER SYMBOL CONDITIONS GROUP A SUBGROUP TEMPERATURE ISET = 1.5µA ISET = 15 µA UNITSMIN MAX MIN MAX Input Offset Voltage VIO VCM = 0V 1 +25 oC -3 3 -3 3 mV 2, 3 +125 oC, -55oC -5 5 -5 5 mV Input Bias Current +IB VCM = 0V, +RS = 10k Ω -RS = 100Ω Note 2 1 +25 oC - - -40 40 nA 2, 3 +125 oC, 0oC - - -50 +50 nA 3 -55 oC - - -60 60 nA -IB VCM = 0V, +RS = 100 Ω -RS = 10kΩ Note 2 1 +25 oC - - -40 40 nA 2, 3 +125 oC, 0oC - - -50 +50 nA 3 -55 oC - - -60 60 nA Input Offset Current IIO VCM = 0V, +RS = 10k Ω -RS = 10kΩ Note 2 1 +25 oC - - -15 15 nA 2, 3 +125 oC, 0oC - - -20 +20 nA 3 -55 oC - - -30 30 nA Large Signal Voltage Gain +AVOL VOUT = 0V and +10V Note 1 4 +25 oC 65 - 80 - kV/V 5, 6 +125 oC, -55oC 25 - 50 - kV/V -AVOL VOUT = 0V and -10V Note 1 4 +25 oC 65 - 80 - kV/V 5, 6 +125 oC, -55oC 25 - 50 - kV/V Common Mode Rejection Ratio +CMRR ΔVCM = +5V, +V = +10V -V = -20V, VOUT = -5V 1 +25 oC 80 - 80 - dB 2, 3 +125 oC, -55oC 80 - 80 - dB -CMRR ΔVCM = -5V, +V = +20V -V = -10V, VOUT = +5V 1 +25 oC 80 - 80 - dB 2, 3 +125 oC, -55oC 80 - 80 - dB Output Voltage Swing +VOUT Note 1 1 +25 oC 12.5 - 12.5 - V 2, 3 +125 oC, -55oC 10.5 - 10.5 - V -VOUT Note 1 1 +25 oC - -12.5 - -12.5 V Output Current +IOUT RL = 2k Ω 1 +25 oC 0.25 - 2.5 - mA -IOUT RL = 2k Ω 1 +25 oC - -0.25 - -2.5 mA Spec Number 518079

Specifications HS-3530RH Quiescent Power Supply Current +ICC IOUT = 0mA 1 +25 oC - 15 - 150 µA 2, 3 +125 oC, -55oC - 15 - 160 µA -ICC IOUT = 0mA 1 +25 oC -15 - -150 - µA 2, 3 +125 oC, -55oC -15 - -160 - µA Power Supply Rejection Ratio +PSRR ΔVSUP = 10V 1 +25 oC 80 - 80 - dB 2, 3 +125 oC, -55oC 80 - 80 - dB -PSRR ΔVSUP = 10V 1 +25 oC 80 - 80 - dB 2, 3 +125 oC, -55oC 80 - 80 - dB NOTES: 1. RL = 75kΩ at ISET = 1.5µA, RL = 5kΩ at ISET = 15µA. 2. Temperature 0oC performed for Intersil -8 product flow only. TABLE 1B. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: Supply Voltage =±3V, RSOURCE = 100Ω , RLOAD = 500kΩ , VOUT = 0V, Unless Otherwise Specified. PARAMETER SYMBOL CONDITIONS GROUP A SUBGROUP TEMPERATURE ISET = 1.5µA ISET = 15 µA UNITSMIN MAX MIN MAX Input Offset Voltage VIO VCM = 0V 1 +25 oC -3 3 -3 3 mV 2, 3 +125 oC, -55oC -5 5 -5 5 mV Large Signal Voltage Gain +AVOL VOUT = 0V and +1V Note 1 4 +25 oC 25 - 25 - kV/V 5, 6 +125 oC, -55oC 15 - 25 - kV/V -AVOL VOUT = 0V and -1V Note 1 4 +25 oC 25 - 25 - kV/V 5, 6 +125 oC, -55oC 15 - 25 - kV/V Common Mode Rejection Ratio +CMRR ΔVCM = +1.5V VOUT = -1.5V 1 +25 oC 80 - 80 - dB 2, 3 +125 oC, -55oC 80 - 80 - dB -CMRR ΔVCM = -1.5V VOUT = +1.5V 1 +25 oC 80 - 80 - dB 2, 3 +125 oC, -55oC 80 - 80 - dB Output Voltage Swing +VOUT Note 1 1 +25 oC 2.0 - 2.0 - V 2, 3 +125 oC, -55oC 2.0 - 2.0 - V -VOUT Note 1 1 +25 oC - -2.0 - -2.0 V Quiescent Power Supply Current +ICC IOUT = 0mA 1 +25 oC - 15 - 150 µA 2, 3 +125 oC, -55oC - 15 - 160 µA -ICC IOUT = 0mA 1 +25 oC -15 - -150 - µA 2, 3 +125 oC, -55oC -15 - -160 - µA Power Supply Rejection Ratio +PSRR ΔVSUP = 1.5V +V = +3V, -V = -3V 1 +25 oC 80 - 80 - dB 2, 3 +125 oC, -55oC 80 - 80 - dB -PSRR ΔVSUP = 1.5V +V = +3V, -V = -3V 1 +25 oC 80 - 80 - dB 2, 3 +125 oC, -55oC 80 - 80 - dB NOTE: 1. RL = 75kΩ at ISET = 1.5µA, RL = 5kΩ at ISET = 15µA. TABLE 1A. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: Supply Voltage =±15V, RSOURCE = 100Ω , RLOAD = 500kΩ , VOUT = 0V, Unless Otherwise Specified. PARAMETER SYMBOL CONDITIONS GROUP A SUBGROUP TEMPERATURE ISET = 1.5µA ISET = 15 µA UNITSMIN MAX MIN MAX Spec Number 518079

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: CL = 100pF, AVCL = +1, RL = 75kΩ , Unless Otherwise Specified. TABLE 3. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: RSOURCE = 50Ω , CL = 100pF, AVCL = +1, Unless Otherwise Specified.

  1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-

based upon data from multiple production runs which reflect lot to lot and within lot variation.

  1. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).
  2. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs).
  3. Caution: Continuous long-duration short-circuit operation may degrade the operating life of the device.

TABLE 4. POST RAD DC ELECTRICAL PERFORMANCE CHARACTERISTICS TABLE 5. BURN-IN DELTA PARAMETERS GROUP B, SUBGROUPS 5 (T A = +25oC) TABLE 6. APPLICABLE SUBGROUPS

  1. Alternate Group A testing in accordance with MIL-STD-883 method 5005 may be exercised.

Intersil Space Level Product Flow -Q Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019,

4 Samples/Wafer, 0 Rejects

100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C,

10 Cycles

100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In, Condition A or B, 240 Hours, +125 oC or Equivalent, Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% PDA, Method 5004 (Note 1) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic (X-Ray), Method 2012 (Note 2) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 3) Sample - Group B, Method 5005 (Note 4) Sample - Group D, Method 5005 (Notes 4 and 5) 100% Data Package Generation (Note 6) NOTES: 1. Failures from subgroup 1 and deltas are used for calculating PDA. The maximum allowable PDA = 5%. 2. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 3. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. separate line items for Group B test, Group B samples, Group D test and Group D samples. 5. Group D Generic Data, as defined by MIL-I-38535, is optional and will not be supplied unless required by the P.O. When required, the P.O. should include a separate line item for Group D generic data. Generic data is not guaranteed to be available and is therefore not available in all cases. 6. Data Package Contents:

  • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quan- tity).
  • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
  • GAMMA Radiation Report. Contains Cover page, disposition, RAD Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil.
  • X-Ray report and film. Includes penetrometer measurements.
  • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
  • Lot Serial Number Sheet (Good units serial number and lot number).
  • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
  • Group B and D attributes and/or Generic data is included when required by the P.O.
  • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.

Intersil Space Level Product Flow -8 GAMMA Radiation Verification (Each Wafer) Method 1019, Periodic- Wire Bond Pull Monitor, Method 2011 Periodic- Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition B 100% Temperature Cycle, Method 1010, Condition C, 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% External Visual 100% Initial Electrical Test 100% Static Burn-In, Condition A or B, 160 Hours, +125 oC or Equivalent, Method 1015 100% Interim Electrical Test 100% PDA, Method 5004 (Note 1) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 2) Sample - Group B, Method 5005 (Note 3) Sample - Group C, Method 5005 (Notes 3 and 4) Sample - Group D, Method 5005 (Notes 3 and 4) 100% Data Package Generation (Note 4) NOTES: 1. Failures from subgroup 1 are used for calculating PDA. The maximum allowable PDA = 5%. 2. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. separate line items for Group B test, Group B samples, Group C test and Group C samples and Group D test and Group D samples. 4. Group C and/or D Generic Data, as defined by MIL-I-38535, is optional and will not be supplied unless required by the P.O. When required, the P.O. should include a separate line item for Group C generic data and/or D generic data. Generic data is not guaranteed to be avail- able and is therefore not available in all cases. 5. Data Package Contents:

  • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quan- tity).
  • GAMMA Radiation Report. Contains Cover page, disposition, RAD Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil.
  • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
  • Group B, C and D attributes and/or Generic data is included when required by the P.O.
  • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.

Simplified Transient Response/Slew Rate Circuit Burn-In Circuit Irradiation Circuit VAC 100100 + 1 OPEN S8 1 2 ACOUT EOUT S32 50K 10K 500K S2 S51 DUT 500K FOR LOOP STABILITY, USE MIN VALUE CAPACITOR TO PREVENT OSCILLATION OPEN 2 OPEN 2 10K +VCC 10.1 -VEE10.1 FB All Resistors =± 1% (Ω ) All Capacitors =± 10% (µF) 100pF† †Includes Stray Capacitance 75K 100pF VOUT RL RSETVINN D1C1 OUTPUT ISET C2 D2 +15V 0.01µF -15V 0.01µF 1M Ω Spec Number 518079

FIGURE 7. INPUT BIAS CURRENT vs TEMPERATURE FIGURE 8. OPEN LOOP VOLTAGE GAIN vs TEMPERATURE

1 SET

DIE DIMENSIONS: 54 x 67 x 11.5mils (1370 x 1700 x 290µm) METALLIZATION: Type: Al Thickness: 12.5k Å ± 2kÅ GLASSIVATION: Type: SiO2 Thickness: 8kÅ ± 1kÅ Metallization Mask Layout HS-3530RH +IN -IN OFFSET ISET OUTPUT OFFSET NULL (& PACKAGE) NULL DIE ATTACH: Temperature: Metal Can - 420oC (Max) WORST CASE CURRENT DENSITY: 0.544 x 105 A/cm2 at 2.5mA SUBSTRATE POTENTIAL (POWERED UP): -V TRANSISTOR COUNT: 49 PROCESS: Complimentary Bipolar Spec Number 518079

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 HS-3530RH Spec Number 518079