HS16B80T HUIXIN | Alldatasheet
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Parameter Symbol Value Unit Storage junction temperature range T stg -40-150 ℃ Operating junction temperature range T j -40-125 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 800 V Repetitive peak reverse voltage (Tj=25℃) VRRM 800 V RMS on-state current (TC≤80℃) IT(RMS) 16 A Non repetitive surge peak on-state current (full cycle , tp=20ms , Tj=25℃) ITSM 160 A Non repetitive surge peak on-state current (full cycle , tp=16.6ms , Tj=25℃) 176 I2t value for fusing (tp=10ms , Tj=25℃) I2t 128 A 2s Critical rate of rise of on-state current (IG=2×IGT , f=100Hz , Tj=125℃) Ⅰ-Ⅱ dI/dt 100 A/μs Ⅲ-Ⅳ 50 Peak gate current (tp=20μs , Tj=125℃) IGM 4 A Average gate power dissipation (Tj=125℃) PG(AV) 0 . 5 W Peak gate power PGM 10 W Symbol Value Unit IT(RMS) 16 A VDRM /VRRM 800 V IGTⅠ/Ⅱ/Ⅲ/Ⅳ 50/50/50/70 mA HS16B80T 16A TRIAC Rev.01 DESCRIPTION: The HS16B80T triac is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as heating regulation, induction motor starting circuits, for phase control operation in light dimmers, motor speed controllers. By using an internal ceramic pad, HS16B80T provides a rated insulation voltage of 2500 VRMS. Package TO-220A is RoHS compliant. 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 1of 4
(Tj=25℃; non-repetitive,off-state;FIG.7) Vpp 1 k V ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit IGT VD=12V RL=33Ω Ⅰ-Ⅱ-Ⅲ MAX. mA Ⅳ 70 VGT ALL MAX. 1 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ ALL MIN. 0.2 V IL IG=1.2IGT Ⅰ-Ⅲ-Ⅳ MAX. mA Ⅱ 1 00 IH IT=500mA MAX. 60 mA dV/dt V D=540V Gate Open Tj=125℃ MIN. 1000 V/μs (dV/dt)c (dI/dt)c=7A/ms, T j=125℃ MIN. 12 V/μs ton IG=80mA IA=400mA IR=40mA Tj=25℃ TYP. μs toff 50 STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM I TM=22.5A tp=380μs T j=25℃ 1 .5 V VTO Threshold voltage T j=125℃ 0.77 V RD Dynamic resistance T j=125℃ 30 mΩ IDRM VD=VDRM VR=VRRM Tj=25℃ 5 μ A IRRM Tj=125℃ 0 .5 m A THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case (AC) 2.0 ℃/W Rth(j-a) junction to ambient (AC) 60 ℃/W 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 2of 4
FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature 0 5 10 15 20 P(W) IT(RMS)(A) 80℃ 02 55 07 5 1 0 0 1 2 5 IT(RMS)(A) TC(℃) FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics 100 120 140 160 180 ITSM(A) Number of cycles Tc=25℃,tp=20ms,one cycle,sine 100 00 . 511 . 522 . 533 . 5 ITM(A) VTM(V) Tj=25℃typ Tj=25℃max Tj=125℃typ FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms, and corresponding value of I2t (Ⅰ-Ⅱ: dI/dt<100A/μs;Ⅲ-Ⅳ: dI/dt<50A/μs) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature dI/dt(I/II) ITSM I2tdI/dt(III/IV) 100 1000 0.01 0.1 1 10 tp(ms) ITSM(A), I2t(A2s) 0.5 1.5 2.5 ‐40 ‐20 0 20 40 60 80 100 120 140 Tj(℃) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) IGT(I/II/III) IGT(IV) IH IL 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 3of 4
FIG.7：Test circuit for inductive and resistive loads to IEC-61000-4-5 standards AC INPUT Filtering Unit IEC61000-4-5 Standards Surge Generator 1.2/50μS voltage surge 8/20μS current surge RGen Load Model R L 6.5μH RG 300Ω PACKAGE MECHANICAL DATA A F C E G B D H Φ3.7-3.9mm Dimensions Millimeters InchesRef. A B C D E F G H 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.80 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.40 0.094 0.339 0.382 10.4 0.386 0.409 6.25 6.85 0.246 0.270 2.65 2.95 0.104 0.116 45° 45° 3.45 0.136 2.70 0.106 4.05 0.159 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832 Rev. 1.0 Page 4of 4