HS12T60T HUIXIN | Alldatasheet
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IT(RMS) 12 A VDRM/VRRM 600 V IGT ≤5 mA ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range Tstg -40-150 ℃ Operating junction temperature range Tj -40-125 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 600 V Repetitive peak reverse voltage (Tj=25℃) VRRM 600 V Average on-state current (TC≤105℃) IT(AV) 7.6 A RMS on-state current (TC≤105℃) IT(RMS) 12 A Non repetitive surge peak on-state current (tp=10ms, Tj=25℃) ITSM 140 A Non repetitive surge peak on-state current (tp=8.3ms, Tj=25℃) 154 I2t value for fusing (tp=10ms , Tj=25℃) I2t 98 A2s Critical rate of rise of on-state current (IG=2×IGT, f=100Hz , Tj=125℃) dI/dt 100 A/μs Peak gate current (tp=20μs , Tj=125℃) IGM 4 A HS12T60T 12A SCR Rev.01 DESCRIPTION: HS12T60T silicon controlled rectifier is specifically designed for medium power switching and phase control applications. High current density due to mesa technology; SIPOS and Glass Passivation technology used has reliable operation up to 125℃ junction temperature. Low IGT parts available. Package TO-220C is RoHS compliant. A(2) K(1) G(3) TO-220C 21 3 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 1of 4
Average gate power dissipation (Tj=125℃) PG(AV) 1 W Peak gate power PGM 10 W Peak pulse voltage (Tj=25℃; non-repetitive,off-state;FIG.7) Vpp 0.5 kV ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Value Unit MIN. TYP. MAX. IGT VD=12V RL=33Ω - - 5 mA VGT - - 1 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ 0.2 - - V IL IG=1.2IGT - - 30 mA IH IT=500mA - - 15 mA dV/dt VD=400V Gate Open Tj=125℃ 400 - - V/μs ton IG=20mA IA=200mA IR=20mA Tj=25℃ - 5 - μs toff - 80 - STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM ITM=24A tp=380μs Tj=25℃ 1.5 V VTO Threshold voltage Tj=125℃ 0.8 V RD Dynamic resistance Tj=125℃ 27 mΩ IDRM VD=VDRM VR=VRRM Tj=25℃ 5 μA IRRM Tj=125℃ 0.2 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case(DC) 1.3 ℃/W Rth(j-a) junction to ambient (DC) 55 ℃/W 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832 Rev. 1.0 Page 2of 4
FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on -state current versus case temperature 0 2 4 6 8 10 12 14 P(W) IT(RMS) (A) 105℃ 0 25 50 75 100 125 IT(RMS) (A) TC(℃) FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics 100 120 140 160 ITSM(A) Number of cycles Tc=25℃,tp=10ms,one cycle,half-sine 100 0 0.5 1 1.5 2 2.5 3 ITM(A) VTM(V) Tj=25℃typ Tj=25℃max Tj=125℃typ FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t (dI/dt<100A/μs) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature dI/dt ITSM I2t 100 1000 0.01 0.1 1 10 ITSM(A), I2t(A2s) tp(ms) 0.5 1.5 2.5 -40 -20 0 20 40 60 80 100 120 140 Tj(℃) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) IGT IL&IH 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 3of 4
FIG.7：Test circuit for inductive and resistive loads to IEC-61000-4-5 standards. AC INPUT Filtering Unit IEC61000-4-5 Standards Surge Generator 1.2/50μS voltage surge 8/20μS current surge RGen Load Model R 2.5Ω L 13μH RG 300Ω PACKAGE MECHANICAL DATA C G AE H B D F Dimensions Millimeters InchesRef. A B C D E F G H 4.40 0.70 0.45 1.25 4.60 0.90 0.60 1.35 0.173 0.028 0.018 0.049 0.181 0.035 0.024 0.053 2.20 2.60 9.90 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.087 0.102 8.90 9.90 2.40 0.094 0.350 0.390 10.3 0.390 0.406 6.30 6.90 0.248 0.272 2.65 2.95 0.104 0.116 2.70 0.130 φ3.45-3.65mm 2.70 0.106 0.1063.30 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 4of 4