HS12HC80C HUIXIN | Alldatasheet
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Parameter Symbol Value Unit Storage junction temperature range T stg -40-150 ℃ Operating junction temperature range T j -40-150 ℃ Repetitive peak off-state voltage (Tj=25℃) V DRM 800 V Repetitive peak reverse voltage (T j=25℃) V RRM 800 V RMS on-state current (TC≤103℃) I T(RMS) 12 A Non repetitive surge peak on-state current (full cycle , tp=20ms , Tj=25℃) ITSM 120 A Non repetitive surge peak on-state current (full cycle , tp=16.6ms , Tj=25℃) 132 I2t value for fusing (tp=10ms , Tj=25℃) I2t 72 A2s Critical rate of rise of on-state current (IG=2×IGT , f=100Hz , Tj=125℃) dI/dt 100 A/μs Peak gate current (tp=20μs , Tj=125℃) IGM 4 A Average gate power dissipation (Tj=125℃) P G(AV) 0.5 W Peak gate power PGM 10 W Symbol Value Unit IT(RMS) 12 A VDRM /VRRM 800 V IGTⅠ/Ⅱ/Ⅲ 35/35/35 mA HS12HC80C 12A TRIAC Rev.01 DESCRIPTION: The HS12HC80C triac is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as heating regulation, induction motor starting circuits, for phase control operation in light dimmers, motor speed controllers. HS12HC80C snubberless triac is especially recommended for use on inductive loads. From T2 terminals to external heatsink. Package TO-262 is RoHS compliant. 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 1of 5
(Tj=25℃; non-repetitive,off-state;FIG.7) Vpp 4 .5 k V ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit IGT VD =12V RL =33Ω Ⅰ-Ⅱ-Ⅲ MAX. 35 mA VGT Ⅰ-Ⅱ-Ⅲ MAX. 1 V VGD VD =VDRM Tj =125℃ RL =3.3KΩ Ⅰ-Ⅱ-Ⅲ MIN. 0.2 V IL IG =1.2IGT Ⅰ-Ⅲ MAX. mA Ⅱ 60 IH IT =500mA MAX. 35 mA dV/dt V D=540V Gate Open Tj =125℃ MIN. 800 V/μs (dI/dt)c (dV/dt)c=20V/μs T j=125℃ MIN. 10 A/ms ton IG=40mA IA=200mA IR=20mA Tj=25℃ TYP. μs toff 30 STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM I TM =17A tp=380μs T j=25℃ 1 .5 V VTO Threshold voltage T j=125℃ 0 .77 V RD Dynamic resistance T j=125℃ 35 mΩ IDRM VD =VDRM VR =VRRM Tj=25℃ 5 μ A IRRM Tj=125℃ 0 .5 m A THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case (AC) 1.3 ℃/W Rth(j-a) junction to ambient (AC) 65 ℃/W 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 2of 5
FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature 02468 1 0 1 2 1 4 P(W) IT(RMS)(A) 103℃ 02 55 07 5 1 0 0 1 2 5 IT(RMS)(A) TC(℃) FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics 100 120 140 ITSM(A) Number of cycles Tc=25℃,tp=20ms,one cycle,sine 100 00 . 511 . 522 . 533 . 5 ITM(A) VTM(V) Tj=25℃typ Tj=25℃max Tj=125℃typ FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms, and corresponding value of I2t (dI/dt<100A/μs) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature dI/dt ITSM I2t 100 1000 0.01 0.1 1 10 tp(ms) ITSM(A), I2t(A2s) 0.5 1.5 2.5 ‐ 4 0 ‐ 2 002 04 06 08 0 1 0 0 1 2 0 1 4 0 Tj(℃) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) IGT(I/II)&IH IGT(III) IL 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 3of 5
FIG.7：Test circuit for inductive and resistive loads to IEC-61000-4-5 standards AC INPUT Filtering Unit IEC61000-4-5 Standards Surge Generator 1.2/50μS voltage surge 8/20μS current surge RGen Load Model R L 12μH RG 300Ω 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832 Rev. 1.0 Page 4of 5
Millimeters InchesRef. A B C D E F G H J K 9.95 23.85 9.40 4.95 10.20 24.05 9.60 5.25 0.392 0.939 0.370 0.195 0.402 0.947 0.378 0.207 1.35 1.40 0.053 0.055 0.80 0.85 0.031 0.033 4.45 4.55 0.175 0.179 2.20 2.60 0.087 0.102 0.48 0.52 0.019 0.020 A L 2.70 3.40 1.30 1.35 B C D E F G L H J K 0.106 0.134 0.051 0.053 M M 1.20 1.50 0.047 0.059 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 5of 5