HS12B60T HUIXIN | Alldatasheet

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12A TRIAC Rev.01 DESCRIPTION: The HS12B60T triac is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as heating regulation, induction motor starting circuits, for phase control operation in light dimmers, motor speed controllers. By using an internal ceramic pad, HS12B60T provides a rated insulation voltage of 2500 VRMS, Package TO-220A is RoHS compliant. MAIN FEATURESABSOL UTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range T stg -40-150 ℃ Operating junction temperature range T j -40-125 ℃ Repetitive peak off-state voltage (Tj=25℃) V DRM 600 V Repetitive peak reverse voltage (Tj=25℃) V RRM 600 V RMS on-state current (TC≤87℃) I T(RMS) 12 A Non repetitive surge peak on-state current (full cycle , tp=20ms , Tj=25℃) ITSM 120 A Non repetitive surge peak on-state current (full cycle , tp=16.6ms , Tj=25℃) 132 I2t value for fusing (tp=10ms , Tj=25℃) I2t 72 A 2s Critical rate of rise of on-state current (IG=2×IGT , f=100Hz , Tj=125℃) Ⅰ-Ⅱ dI/dt 100 A/μs Ⅲ-Ⅳ 50 Peak gate current (tp=20μs , Tj=125℃) IGM 4 A Average gate power dissipation (Tj=125℃) P G(AV) 0.5 W Peak gate power PGM 10 W Symbol Value Unit IT(RMS) 12 A VDRM /VRRM 600 V IGTⅠ/Ⅱ/Ⅲ/Ⅳ 50/50/50/70 mA 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 1of 4

(Tj=25℃; non-repetitive,off-state;FIG.7) Vpp 2 k V ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit IGT VD=12V RL=33Ω Ⅰ-Ⅱ-Ⅲ MAX. mA Ⅳ 7 0 VGT ALL MAX. 1 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ ALL MIN. 0.2 V IL IG=1.2IGT Ⅰ-Ⅲ-Ⅳ MAX. mA Ⅱ 100 IH IT=500mA MAX. 60 mA dV/dt V D=400V Gate Open Tj=125℃ MIN. 1200 V/μs (dV/dt)c (dI/dt)c=5.3A/ms, T j=125℃ MIN. 12 V/μs ton IG=80mA IA=400mA IR=40mA Tj=25℃ TYP. μs toff 3 0 STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM I TM=17A tp=380μs T j=25℃ 1 .5 V VTO Threshold voltage T j=125℃ 0.77 V RD Dynamic resistance T j=125℃ 3 5 mΩ IDRM VD=VDRM VR=VRRM Tj=25℃ 5 μA IRRM Tj=125℃ 0 .4 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case (AC) 2.3 ℃/W Rth(j-a) junction to ambient (AC) 60 ℃/W 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 2of 4

FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature 02468 1 0 1 2 1 4 P(W) IT(RMS)(A) FIG.3: Surge peak on-state current versus number of cycles 100 120 140 ITSM(A) Number of cycles Tc=25℃,tp=20ms,one cycle,sine 87℃ 02 55 07 5 1 0 0 1 2 5 IT(RMS)(A) TC(℃) FIG.4: On-state characteristics 100 012345 ITM(A) VTM(V) Tj=25℃typ Tj=25℃max Tj=125℃typ FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms, and corresponding value of I2t (Ⅰ-Ⅱ: dI/dt<100A/μs; Ⅲ-Ⅳ: dI/dt<50A/μs) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature dI/dt(I/II) ITSM I2t dI/dt(III/IV) 100 1000 0.01 0.1 1 10 tp(ms) ITSM(A), I2t(A2s) 0.5 1.5 2.5 ‐ 4 0 ‐ 2 002 04 06 08 0 1 0 0 1 2 0 1 4 0 Tj(℃) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) IGT(I/II/III) IGT(IV) IH IL 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 3of 4

FIG.7：Test circuit for inductive and resistive loads to IEC-61000-4-5 standards AC INPUT Filtering Unit IEC61000-4-5 Standards Surge Generator 1.2/50μS voltage surge 8/20μS current surge RGen Load Model R L 12μH RG 300Ω PACKAGE MECHANICAL DATA A F C E G B D H Φ3.7-3.9mm Dimensions Millimeters InchesRef. A B C D E F G H 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.80 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.40 0.094 0.339 0.382 10.4 0.386 0.409 6.25 6.85 0.246 0.270 2.65 2.95 0.104 0.116 45° 45° 3.45 0.136 2.70 0.106 4.05 0.159 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832 Rev. 1.0 Page 4of 4