HS-245RH RENESAS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Electrically Screened to SMD # 5962-96722 and 5962-96723
  • QML Qualified per MIL-PRF-38535 Requirements
  • Radiation Hardened DI Processing - Latchup Free
  • Replaces HD-245/246/248
  • Current Mode Operation
  • High Noise Immunity
  • Low EMI Generation
  • Low Power Dissipation
  • High Common Mode Rejection
  • Transmitter and Receiver Party Line Capability
  • Tolerates -2.0V to +20.0V Ground Differential (Transmitter with Respect to Receiver)
  • Transmitter Input/Receiver Output TTL/DTL Compatible PART NO. INPUT OUTPUT HS-246RH 100  Open Collector HS-248RH Hi-Z 6K Pull-Up Resistors

Ordering Information

MKT. NUMBER TEMP. RANGE (oC) 5962R9672201QCC HS1-245RH-8 -55 to 125 5962R9672201QXC HS9-245RH-8 -55 to 125 5962R9672201VCC HS1-245RH-Q -55 to 125 5962R9672201VXC HS9-245RH-Q -55 to 125 HS9-245RH/PROTO HS9-245RH/PROTO -55 to 125 5962R9672301QCC HS1-246RH-8 -55 to 125 5962R9672301QXC HS9-246RH-8 -55 to 125 5962R9672301VCC HS1-246RH-Q -55 to 125 5962R9672301VXC HS9-246RH-Q -55 to 125 5962R9672302QCC HS1-248RH-8 -55 to 125 5962R9672302QXC HS9-248RH-8 -55 to 125 5962R9672302VCC HS1-248RH-Q -55 to 125 5962R9672302VXC HS9-248RH-Q -55 to 125 NOT RECOMMENDED FOR NEW DESIGNS NO RECOMMENDED REPLACEMENT contact our Technical Support Center at 1-888-INTERSIL or www.intersil.com/tsc

transmission line capacitance. easily obtained on transmission lines as long as 1,000 feet. typically 25mW for the transmitter and 15mW for the receiver. the transmitter and receivers are outlined in Table A. FIGURE 3. TYPICAL APPLICATION Design Information section of this data sheet.

line as well as requiring very little power supply current. rate on long transmission lines.

100 Open Collector

FIGURE 4. TYPICAL DATA TRANSMISSION SYSTEM

FN3034 Rev.4.00 Page 7 of 8 April 2003 HS-245RH, HS-246RH, HS-248RH Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com For additional products, see www.intersil.com/en/products.html © Copyright Intersil Americas LLC 2003. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. Die Characteristics DIE DIMENSIONS: 45 mils x 45 mils x 11 mils 1140m x 1140m x 280m INTERFACE MATERIALS: Glassivation: Type: Silox Thickness: 8k Å 1kÅ Top Metallization: Type: Aluminum Thickness: 12.5kÅ 2kÅ Substrate: HFSB Bipolar/Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased ADDITIONAL INFORMATION: Worst Case Current Density: 7.8 x 10

4 A/cm2

Transistor Count: Metallization Mask Layout HS-245RH OUTPUT f1 INPUT f1 VCC INPUT f2 OUTPUT f2 INPUT f2 INPUT f1 OUTPUT f1 SUBSTRATE GND OUTPUT f2 INPUT f2 OUTPUT f2 OUTPUT f1 INPUT f1

HS-245RH, HS-246RH, HS-248RH FN3034 Rev.4.00 Page 8 of 8 April 2003 Die Characteristics DIE DIMENSIONS: 45 mils x 47 mils x 11 mils 1140m x 1190m x 280m INTERFACE MATERIALS: Glassivation: Type: Silox Thickness: 8k Å 1kÅ Top Metallization: Type: T.W. Thickness: 2.5k Å 0.5kÅ Type: Al Thickness: 14k Å 2kÅ Substrate: ALPS Bipolar/Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased ADDITIONAL INFORMATION: Worst Case Current Density: 1.4 x 10

5 A/cm2

Transistor Count: Metallization Mask Layout HS-246RH HS-248RH OUTPUT R1 (-) INPUT (+) INPUT OUTPUT R2 GND (-) INPUT (+) INPUT VEE R1 AND R2 VEE R3 OUTPUT R3 (+) INPUT (-) INPUT VCC R1 AND R2 VCC R3 VEE R1 AND R2 VEE R3 OUTPUT R3 (+) INPUT (-) INPUT VCC R1 AND R2 VCC R3 OUTPUT R1 (-) INPUT (+) INPUT OUTPUT R2 GND (-) INPUT (+) INPUT