HS-1245RH INTERSIL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Electrically Screened to SMD # 5962-96832
- QML Qualified per MIL-PRF-38535 Requirements
- MIL-PRF-38535 Class V Compliant
- Individual Output Enable/Disable
Applications
- Multiplexed Flash A/D Driver
- RGB Multiplexers and Preamps
- Video Switching and Routing
- Pulse and Video Amplifiers
- Wideband Amplifiers
- Hand Held and Miniaturized RF Equipment
- Battery Powered Communications Pinout HS-1245RH (CERDIP) GDIP1-T14 OR HS-1245RH (SBDIP) CDIP2-T14 TOP VIEW
Ordering Information
MKT. NUMBER TEMP. RANGE (oC) 5962F9683201VCA HS1-1245RH-Q -55 to 125 5962F9683201VCC HS1B-1245RH-Q -55 to 125 -IN1 +IN1 DISABLE 1 DISABLE 2 +IN2 -IN2 OUT2 NC NC NC OUT1 GND Data Sheet August 1999
NOTES: 1. R1 = 1k Ω ,±5%, 1/4W min (Per Socket) 2. R2 = 10k Ω ,±5%, 1/4W min (Per Socket) 3. C1 = 0.01 µF (Per Socket) or 0.1µF (Per Row) Minimum 4. D1, D2 = 1N4002 or Equivalent (Per Board) 5. D3, D4 = 1N4002 or Equivalent (Per Socket) 7. 10mA < (I CC , IEE ) < 16mA 8. -750mV < VOUT < +750mV Irradiation Circuit HS-1245RH CERDIP NOTES: 9. R1 = 1kΩ ,±5% 10. R2 = 10kΩ ,±5% 11. C1 = 0.01µF C1 D1 D2 C2 HS-1245RH
All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Die Characteristics DIE DIMENSIONS: 69 mils x 92 mils x 19 mils ±1 mil 1750 x 2330 x 355µm ±25.4µm INTERFACE MATERIALS: Glassivation: Type: Nitride Thickness: 4kÅ ±0.5kÅ Top Metallization: Type: Metal 1: AICu(2%)/TiW Type: Metal 2: AICu(2%) Thickness: Metal 1: 8k Å ±0.4kÅ Thickness: Metal 2: 16kÅ ±0.8kÅ Substrate: UHF-1X, Bonded Wafer, DI Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential(Powered Up): Floating ADDITIONAL INFORMATION: Worst Case Current Density: < 2 x 105 A/cm2 Transistor Count: 150 Metallization Mask Layout HS-1245RH NOTE: This is an optional GND pad. Users may set a GND reference, via this pad, to ensure the TTL compatibility of theDISABLE inputs when using asymmetrical supplies (e.g., V+ = 10V, V- = 0V). See the “Application Information” section for details. OUT2 +IN1 -IN1 VL +IN2 OUT1 -IN2 NC NC GND (NOTE) DISABLE1 DISABLE2 HS-1245RH