HS020U HUIXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
2A Sensitive SCR Rev.01 DESCRIPTION: The HS020U SCR provides high dV/dt rate with strong resistance to electromagnetic interface. It is especially recommended for use on residual current circuit breaker, straight hair, igniter etc. Package TO-92 is RoHS compliant. MAIN FEATURES Symbol Value Unit IT(RMS) 2 A VDRM /VRRM 600 V IGT ≤200 μA ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range T stg -40-150 ℃ Operating junction temperature range T j -40-125 Repetitive peak off-state voltage (Tj=25℃) V DRM 600 V Repetitive peak reverse voltage (Tj=25℃) V RRM 600 V Average on-state current IT(AV) 1 . 3 A RMS on-state current IT(RMS) 2 A Non repetitive surge peak on-state current (tp=10ms , Tj=25℃) ITSM A Non repetitive surge peak on-state current (tp=8.3ms , Tj=25℃) 22 I2t value for fusing (tp=10ms , Tj=25℃) I2t 2 A 2s Critical rate of rise of on-state current (IG=2×IGT , f=100Hz , Tj=125℃) dI/dt 50 A/μs Peak gate current (tp=20μs, Tj=125℃) IGM 1.2 A Average gate power dissipation (Tj=125℃) P G(AV) 0 . 2 W 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 1of 4
(Tj=25℃; non-repetitive,off-state;FIG.7) Vpp 0 . 5 k V NOTE 1: When we parallel connect a ≤1KΩ resistor between Gate and Cathode, the Tj can reach 125℃; if without this resistor, the Tj only can reach 110℃. ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Value Unit MIN. TYP. MAX. IGT VD=12V RL=33Ω - 50 200 μA VGT - 0.6 0.8 V VGD VD=VDRM Tj=125℃ 0 .2 - - V IL IG=1.2 IGT - - 6 mA IH IT=0.05A - - 5 mA dV/dt VD=400V Tj=125℃ RGK=1KΩ 20 - - V/μs VD=400V Tj=125℃ RGK=220Ω 100 - - ton IG=10mA IA=20mA IR=2mA Tj=25℃ - 2 - μs toff - 50 - μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM I T=4A tp=380μs T j=25℃ 1 .5 V VTO Threshold voltage T j=125℃ 0 .8 V RD Dynamic Resistance T j=125℃ 0.07 Ω IDRM VD=VDRM VR=VRRM Tj=25℃ 5 μ A IRRM Tj=125℃ 0 .2 m A THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case (DC) 60 ℃/W Rth(j-a) junction to ambient (DC) 150 ℃/W 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 2of 4
FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature 0.5 1.5 2.5 3.5 00 . 511 . 522 . 5 P(W) IT(RMS)(A) 0.5 1.5 2.5 02 55 07 5 1 0 0 1 2 5 IT(RMS)(A) TC(℃) FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics ITSM(A) Number of cycles Tc=25℃,tp=10ms,one cycle,half‐sine 0.1 00 . 511 . 522 . 53 ITM(A) VTM(V) Tj=25℃typ Tj=25℃max Tj=125℃typ FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t (dI/dt<50A/μs) FIG.6: Relative variations of gate triggercurrent, holding current and latching current versus junction temperature dI/dt ITSM I2t 100 0.01 0.1 1 10 ITSM(A), I2t(A2s) tp(ms) 0.5 1.5 2.5 ‐ 4 0 ‐ 2 002 04 06 08 0 1 0 0 1 2 0 1 4 0 Tj(℃) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) IGT IL&IH 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 3of 4
FIG.7：Test circuit for inductive and resistive loads to IEC-61000-4-5 standards. AC INPUT Filtering Unit IEC61000-4-5 Standards Surge Generator 1.2/50μS voltage surge 8/20μS current surge RGen Load Model R 30Ω L 53μH RG 1kΩ PACKAGE MECHANICAL DATA K G B Φ Max 1.5mm H A F C N N E P V D J D i mensions Millimeters Inc hesRef. A B C D E F G H J K N P V 4.45 4.32 3.18 0.407 5.20 5.33 4.19 0.533 0.175 0.170 0.125 0.016 0.205 0.210 0.165 0.021 0.50 0.70 1.10 0.043 2.20 0.087 0.36 0.50 0.014 0.020 15.012.70 0.500 0.591 2.04 2.66 0.080 0.105 1.80 2.30 0.071 0.091 4.50 0.1774.10 0.161 0.020 0.028 1.30 0.051 1.10 1.40 0.055 2.40 0.094 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 4of 4