HS-54C138RH_00 INTERSIL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Electrically Screened to SMD # 5962-95825
- QML Qualified per MIL-PRF-38535 Requirements
- Radiation Hardened EPI-CMOS
- Multiple Input Enable for Easy Expansion
- Outputs Active Low
- High Noise Immunity
- Equivalent to Sandia SA2995
- Bus Compatible with Intersil Rad-Hard 80C85RH oC to 125oC Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16 TOP VIEW
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16 TOP VIEW
Ordering Information
MKT. NUMBER TEMP. RANGE (oC) 5962R9582501QEC HS1-54C138RH-8 -55 to 125 5962R9582501QXC HS9-54C138RH-8 -55 to 125 5962R9582501V9A HS0-54C138RH-Q 25 5962R9582501VEC HS1-54C138RH-Q -55 to 125 5962R9582501VXC HS9-54C138RH-Q -55 to 125 A B C G2A G2B GND VDD A B C G2A G2B GND 11 6 VDD Data Sheet August 2000 OBSOLETE PRODUCT POSSIBLE SUBSTITUTE PRODUCT ACS/ACTS138, HCS/HCTS138 contact our Technical Support Center at 1-888-INTERSIL or www.intersil.com/tsc
FIGURE 3. Y7 Y6 Y5 Y4 Y3 Y2 Y1 Y0 G1 G2B G2A C B A DATA INPUT EN EN SELECT HS-54C138RH
DIE DIMENSIONS: 76 mils x 63 mils x 14 mils ±1 mil ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) INTERFACE MATERIALS: Glassivation: Type: SiO2 Thickness: 8kÅ ±1kÅ Top Metallization: Type: AlSi Thickness: 11kÅ ±2kÅ Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon Metallization Mask Layout HS-54C138RH Y5 (10) (5) G2B (4) G2A (3) C Y4 (11) Y3 (12) Y2 (13) Y1 (14) (9) Y6 (8) GND (7) Y7 (6) G1 Y0 (15) VDD (16) A (1) B (2) HS-54C138RH