HS-303ARH_12 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • QML, Per MIL-PRF-38535
  • Radiation Performance -T o t a l D o s e : 3 x 1 05 RAD(Si) - SEE: For LET = 60MeV-mg/cm 2 at 60° Incident Angle, <150pC Charge Transferred to the Output of an Off Switch
  • No Latch-Up, Dielectrically Isolated Device Islands
  • Pinout and Functional ly Compatible with Intersil HS-303RH and HI-303 Series Analog Switches
  • Analog Signal Range Equal to the Supply Voltage Range
  • L o w r (Max, Post-Rad) Functional Diagram Pin Configurations HS1-303ARH, HS-303BRH (SBDIP), CDIP2-T14 TOP VIEW HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH (FLATPACK) CDFP3-F14 TOP VIEW TRUTH TABLE LOGIC SW1 AND SW2 SW3 AND SW4 0O F F O N 1O N O F F N PIN D NC GND IN1 IN2 S2S1 NC GND IN1 IN2 December 12, 2012 FN6411.2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 |Copyright Intersil Americas Inc. 2006, 2008, 2012. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners.

HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH 2 FN6411.2 December 12, 2012

Ordering Information

(Note) PART NUMBER TEMP. RANGE (°C) PKG. PKG. DWG. # 5962F9581304QCC HS1-303ARH-8 -55 to +125 14 LD SBDIP D14.3 5962F9581304QXC HS9-303ARH-8 -55 to +125 14 LD Flatpack K14.A 5962F9581304V9A HS0-303ARH-Q -55 to +125 14 Ld SBDIP D14.3 5962F9581306V9A HS0-303AEH-Q -55 to +125 14 Ld SBDIP D14.3 5962F9581304VCC HS1-303ARH-Q -55 to +125 14 LD SBDIP D14.3 5962F9581306VCC HS1-303AEH-Q -55 to +125 14 LD SBDIP D14.3 5962F9581304VXC HS9-303ARH-Q -55 to +125 14 LD Flatpack K14.A HS0-303ARH/SAMPLE HS0-303ARH/SAMPLE -55 to +125 HS1-303ARH/PROTO HS1-303ARH/PROTO -55 to +125 14 LD SBDIP D14.3 HS9-303ARH/PROTO HS9-303ARH/PROTO -55 to +125 14 LD Flatpack K14.A 5962F9581306VXC HS9-303AEH-Q -55 to +125 14 LD Flatpack K14.A 5962F9581305QCC HS1-303BRH-8 -55 to +125 14 LD SBDIP D14.3 5962F9581305QXC HS9-303BRH-8 -55 to +125 14 LD Flatpack K14.A 5962F9581305V9A HS0-303BRH-Q -55 to +125 14 LD SBDIP D14.3 5962F9581307V9A HS0-303BEH-Q -55 to +125 14 LD SBDIP D14.3 5962F9581305VCC HS1-303BRH-Q -55 to +125 14 LD SBDIP D14.3 5962F9581307VCC HS1-303BEH-Q -55 to +125 14 LD SBDIP D14.3 5962F9581305VXC HS9-303BRH-Q -55 to +125 14 LD Flatpack K14.A HS0-303BRH/SAMPLE HS0-303BRH/SAMPLE -55 to +125 HS1-303BRH/PROTO HS1-303BRH/PROTO -55 to +125 14 LD SBDIP D14.3 HS9-303BRH/PROTO HS9-303BRH/PROTO -55 to +125 14 LD Flatpack K14.A 5962F9581307VXC HS9-303BEH-Q -55 to +125 14 LD Flatpack K14.A NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations.

HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com FN6411.2 December 12, 2012 For additional products, see www.intersil.com/product_tree Die Characteristics DIE DIMENSIONS: 2690µm x 5200µm (106mils x 205mils) Thickness: 483µm ± 25.4µm (19mils ± 1mil) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kÅ ± 1.0kÅ Top Metallization: Type: AlSiCu Thickness: 16.0kÅ ± 2kÅ Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 196 Metallization Mask Layout HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH IN1 GND IN2

HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH 4 FN6411.2 December 12, 2012 Ceramic Dual-In-Line Metal Seal Packages (SBDIP) NOTES: 1. Index area: A notch or a pin one identification mark shall be located ad- jacent to pin one and shall be locat ed within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identi- fication mark. 2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. 4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces dimension b2. 5. Dimension Q shall be measured from the seating plane to the base plane. 6. Measure dimension S1 at all four corners. 7. Measure dimension S2 from the top of the ceramic body to the nearest metallization or lead. 8. N is the maximum number of terminal positions. 9. Braze fillets shall be concave. 10. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 11. Controlling dimension: INCH. bbb C A - BS c Q L A SEATING BASE D PLANE PLANE S S -D--A- -C- eA -B- aaa CA - BM DS Sccc CA - BM DS S D E b A e M (c) (b) SECTION A-A BASE LEAD FINISH METAL eA/2 M A D14.3 MIL-STD-1835 CDIP2-T14 (D-1, CONFIGURATION C)

14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE

A - 0.200 - 5.08 - b 0.014 0.026 0.36 0.66 2 b1 0.014 0.023 0.36 0.58 3 b2 0.045 0.065 1.14 1.65 - b3 0.023 0.045 0.58 1.14 4 c 0.008 0.018 0.20 0.46 2 c1 0.008 0.015 0.20 0.38 3 E 0.220 0.310 5.59 7.87 - e 0.100 BSC 2.54 BSC - eA 0.300 BSC 7.62 BSC - eA/2 0.150 BSC 3.81 BSC - L 0.125 0.200 3.18 5.08 - Q 0.015 0.060 0.38 1.52 5 S1 0.005 - 0.13 - 6 S2 0.005 - 0.13 - 7 α 90o 105o 90o 105o - aaa - 0.015 - 0.38 - bbb - 0.030 - 0.76 - ccc - 0.010 - 0.25 - M - 0.0015 - 0.038 2 N1 4 1 4 8 Rev. 0 4/94

HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH 5 FN6411.2 December 12, 2012 Ceramic Metal Seal Flatpack Packages (Flatpack) NOTES: 1. Index area: A notch or a pin one identification mark shall be located ad- jacent to pin one and shall be locat ed within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identi- fication mark. Alternately, a tab (dimension k) may be used to identify pin one. 2. If a pin one identification mark is used in addition to a tab, the limits of dimension k do not apply. 3. This dimension allows for off-center lid, meniscus, and glass overrun. 4. Dimensions b1 and c1 apply to lead base metal only. Dimension M ap- plies to lead plating and finish thickness. The maximum limits of lead dimensions b and c or M shall be m easured at the centroid of the fin- ished lead surfaces, when solder dip or tin plate lead finish is applied. 5. N is the maximum number of terminal positions. 6. Measure dimension S1 at all four corners. 7. For bottom-brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the package to cover the leads. 8. Dimension Q shall be measured at the point of exit (beyond the menis- cus) of the lead from the body. Dimension Q minimum shall be reduced by 0.0015 inch (0.038mm) maximum when solder dip lead finish is applied. 9. Dimensioning and toleranci ng per ANSI Y14.5M - 1982. 10. Controlling dimension: INCH. -D- -C-

0.004 H A - BM DS S

-A- -B-

0.036 H A - BM DS S

e E A Q L D A SEATING AND LE2 E3 E3 BASE PLANE -H- b C M (c) (b) SECTION A-A BASE LEAD FINISH METAL PIN NO. 1 ID AREA A M K14.A MIL-STD-1835 CDFP3-F14 (F-2A, CONFIGURATION B)

14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE

A 0.045 0.115 1.14 2.92 - b 0.015 0.022 0.38 0.56 - b1 0.015 0.019 0.38 0.48 - c 0.004 0.009 0.10 0.23 - c1 0.004 0.006 0.10 0.15 - D - 0.390 - 9.91 3 E 0.235 0.260 5.97 6.60 - E 1 -0 . 2 9 0-7 . 1 1 3 E3 0.030 - 0.76 - 7 e 0.050 BSC 1.27 BSC - k 0.008 0.015 0.20 0.38 2 L 0.270 0.370 6.86 9.40 - Q 0.026 0.045 0.66 1.14 8 S1 0.005 - 0.13 - 6 N1 4 1 4- Rev. 0 5/18/94