HS-22620RH INTERSIL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Electrically Screened to SMD # 5962-97512
- QML Qualified per MIL-PRF-38535 Requirements
- Wide Gain Bandwidth Product (A
- Output Short Circuit Protection
5 RAD(Si)
Applications
- Video and RF Amplifiers
- Pulse Amplifiers
- High-Q Active Filters
- High Speed Comparators Pinout HS-22620RH (FLATPACK) TOP VIEW NOTE: Refer to SMD, Figure 1
Ordering Information
MKT. NUMBER TEMP. RANGE (oC) 5962F9751201V9A HS0-22620RH-Q 25 5962F9751201VXC HS9-22620RH-Q -55 to 125 HS9-22620RH/PROTO HS9-22620RH/PROTO -55 to 125 VCC B (10) VEE B (11) OUT B (12) COMP B (13) WEB (14) COMP A (15) OUT A (16) V EE A (17) VCC A (18)(1) BAL 2A (2) BAL 1A (3) +IN A (4) -IN A (5) OPEN (6) -IN B (7) +IN B (8) BAL 1B (9) BAL 2B Data Sheet August 1999
All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Dynamic Burn-In Circuit Radiation Exposure Circuit NOTES: 13. C1 = 0.1µF,±10%, one cap per V per socket. HS9-22620RH-Q FLATPACK NOTES: 2. V2 = -15V±0.5V. 5. C1 = 0.1µF, 10%, one cap per V per socket. 6. F0 = 10kHz,±10%, 50% duty cycle. 7. VIH= +100mV ±10mV. 8. VIL= -100mV ±10mV. R 1 R 2R 1 R 2R 1 C 1 C 1 FO R 1 6 R 2 R 2R 1 R 2R 1 C 1 C 1 R 2 6 HS-22620RH
DIE DIMENSIONS: 145 mils x 116 mils x 19 mils±1 mil 3670µm x 2950µm x 483µm ±25.4µm INTERFACE MATERIALS: Glassivation: Type: Nitride (S13N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12kÅ ±2kÅ Nitride Thickness: 3.5kÅ ±1.5kÅ Top Metallization: Type: Al, 1% Cu Thickness: 14kÅ ±2kÅ Substrate: Bipolar Bonded Wafer (EBHF) Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): Unbiased Silicon (WEB pad provided for substrate tie-off.) ADDITIONAL INFORMATION: Worst Case Current Density: <2 x 105 A/cm2 Transistor Count: 184 Metallization Mask Layout HS-22620RH (16) OUTA (15) COMPA (14) WEB (13) COMPB (12) OUTB (11) VEEB (10) VCCB (9) BAL2B (8) BAL1B +INA (3) -INA (4) -INB (6) +INB (7) BAL1A (2) BAL2A (1) VCCA (18) VEEA (17) HS-22620RH