HS-1840ARH RENESAS | Alldatasheet

Document overview

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Technical content

Features

  • Electrically screened to SMD # 5962-95630
  • QML qualified per MIL-PRF-38535 requirements
  • Pin-to-pin for Intersil’s HS-1840RH and HS-1840/883S
  • Improved radiation performance -G a m m a d o s e () 3x10 5RAD(Si)
  • I m p r o v e d rDS(ON) Linearity
  • Improved access time 1.5µs (Max) over temp and post rad
  • High analog input impedance 500Mduring power loss (open)
  • 35V input overvoltage protection (power on or off)
  • Dielectrically isolated device islands
  • Excellent in Hi-Rel redundant systems
  • Break-before-make switching
  • N o l a t c h - u p Pin Configuration HS1-1840ARH, HS1-1840AEH, HS1-1840BRH, HS1-1840BEH (28 LD SBDIP) CDIP2-T28 TOP VIEW HS9-1840ARH, HS9-1840AEH, HS9-1840BRH, HS9-1840BEH (28 LD FLATPACK) CDFP3-F28 TOP VIEW +VS NC NC IN 16 IN 15 IN 14 IN 13 IN 12 IN 11 IN 10 IN 9 GND (+5V S) VREF ADDR A3 OUT IN 8 IN 7 IN 6 IN 5 IN 3 IN 1 ENABLE ADDR A0 ADDR A1 ADDR A2 -VS IN 4 IN 2 S NC NC IN 16 IN 15 IN 14 IN 13 IN 12 IN 11 IN 10 IN 9 GND (+5V S) VREF ADDR A3 OUT -VS IN 8 IN 7 IN 6 IN 5 IN 4 IN 3 IN 2 IN 1 ENABLE ADDR A0 ADDR A1 ADDR A2

HS-1840ARH, HS-1840AEH, HS-1840BRH, HS-1840BEH FN4355 Rev 6.00 Page 2 of 7 May 23, 2013

Ordering Information

(Note 1) INTERNAL MKT. NUMBER PART MARKING NO. TEMP. RANGE (°C) PACKAGE (RoHS Compliant) 5962F9563002QXC HS1-1840ARH-8 Q 5962F95 63002QXC -55 to +125 28 Ld SBDIP 5962F9563002QYC HS9-1840ARH-8 Q 5962F95 63002QYC -55 to +125 28 Ld Flatpack 5962F9563002VXC HS1-1840ARH-Q Q 5962F95 63002VXC -55 to +125 28 Ld SBDIP 5962F9563002VYC HS9-1840ARH-Q Q 5962F95 63002VYC -55 to +125 28 Ld Flatpack HS0-1840ARH/SAMPLE HS0-1840ARH/SAMPLE Die -55 to +125 HS1-1840ARH/PROTO HS1-1840ARH/PROTO HS1- 1840ARH /PROTO -55 to +125 28 Ld SBDIP HS9-1840ARH/PROTO HS9-1840ARH/PROTO HS9- 1840ARH /PROTO -55 to +125 28 Ld Flatpack 5962R9563002TXC HS1-1840ARH-T Q 5962R95 63002TXC -55 to +125 28 Ld SBDIP 5962F9563002V9A HS0-1840ARH-Q Die -55 to +125 5962F9563004V9A HS0-1840AEH-Q Die -55 to +125 5962F9563004VXC HS1-1840AEH-Q Q 5962F95 63004VXC -55 to +125 28 Ld SBDIP 5962F9563004VYC HS9-1840AEH-Q Q 5962F95 63004VYC -55 to +125 28 Ld Flatpack 5962F9563005V9A HS0-1840BEH-Q Die -55 to +125 5962F9563005VXC HS1-1840BEH-Q Q 5962F95 63005VXC -55 to +125 28 Ld SBDIP 5962F9563005VYC HS9-1840BEH-Q Q 5962F95 63005VYC -55 to +125 28 Ld Flatpack 5962F9563003QXC HS1-1840BRH-8 Q 5962F95 63003QXC -55 to +125 28 Ld SBDIP 5962F9563003QYC HS9-1840BRH-8 Q 5962F95 63003QYC -55 to +125 28 Ld Flatpack 5962F9563003VXC HS1-1840BRH-Q Q 5962F95 63003VXC -55 to +125 28 Ld SBDIP 5962F9563003VYC HS9-1840BRH-Q Q 5962F95 63003VYC -55 to +125 28 Ld Flatpack HS1-1840BRH/PROTO HS1-1840BRH/PROTO HS1- 1840BRH /PROTO -55 to +125 28 Ld SBDIP HS9-1840BRH/PROTO HS9-1840BRH/PROTO HS9- 1840BRH /PROTO -55 to +125 28 Ld Flatpack 5962F9563003V9A HS0-1840BRH-Q Die -55 to +125 HS0-1840BRH/SAMPLE HS0-1840BRH/SAMPLE Die -55 to +125 5962F9563002VZC HS9G-1840ARH-Q (Note 2) Q 5962F95 63002VZC -55 to +125 28 Ld Flatpack HS9G-1840ARH/PROTO HS9G-1840ARH/PROTO (Note 2) HS9G-1840ARH/PROTO -55 to +125 28 Ld Flatpack NOTES: 1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. 2. The lid of these packages are connect ed to the ground pin of the device.

TABLE 1. TRUTH TABLE

FIGURE 1. DYNAMIC BURN-IN AND LIFE TEST CIRCUIT FIGURE 2. .STATIC BURN-IN TEST CIRCUIT

  1. The above test circuits are utilized for all package types.
  2. The Dynamic Test Circuit is utilized for all life testing.
  3. All irradiation testing is performed in the 28 lead CERDIP package.

1 = C2 = 0.01µF ±10%, 1 EACH PER SOCKET, MINIMUM. D1 = D2 = 1N4002, 1 EACH PER BOARD, MINIMUM. SQUARE WAVE, 50% DUTY CYCLE, 0V TO 15V PEAK ±10%. 1 = C2 = 0.01µF MINIMUM, 1 EACH PER SOCKET, MINIMUM.

HS-1840ARH, HS-1840AEH, HS-1840BRH, HS-1840BEH FN4355 Rev 6.00 Page 5 of 7 May 23, 2013 Die Characteristics DIE DIMENSIONS: (2820µmx4080µm x 483µm 25.4m) 111 milsx161 milsx19 mils 1 mil INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorus Silicon Glass) Thickness: 8.0kÅ 1kÅ Top Metallization: Type: AlSiCu Thickness: 16.0kÅ 2kÅ Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: Modified SEM Transistor Count: 407 Process: Radiation Hardened Silicon Gate, DI Wafer, Dielectric Isolation Metallization Mask Layout HS-1840ARH, HS-1840BRH IN7 IN6 IN5 IN4 IN3 IN2 IN1 ENABLE VREF GND IN8 OUT IN16 IN15 IN14 IN13 IN12 IN11 IN10 IN9

FN4355 Rev 6.00 Page 6 of 7 May 23, 2013 HS-1840ARH, HS-1840AEH, HS-1840BRH, HS-1840BEH Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com For additional products, see www.intersil.com/en/products.html © Copyright Intersil Americas LLC 2002-2013. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. Ceramic Dual-In-Line Metal Seal Packages (SBDIP) NOTES: 1. Index area: A notch or a pin one identification mark shall be locat- ed adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. 2. The maximum limits of lead di mensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. 4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces dimension b2. 5. Dimension Q shall be measured from the seating plane to the base plane. 6. Measure dimension S1 at all four corners. 7. Measure dimension S2 from the top of the ceramic body to the nearest metallization or lead. 8. N is the maximum number of terminal positions. 9. Braze fillets shall be concave. 10. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 11. Controlling dimension: INCH. bbb C A - BS c Q L A SEATING BASE D PLANE PLANE S S -D--A- -C- eA -B- aaa C A - BM DS Sccc C A - BM DS S D E b A e M (c) (b) SECTION A-A BASE LEAD FINISH METAL eA/2 M A D28.6 MIL-STD-1835 CDIP2-T28 (D-10, CONFIGURATION C)

28 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE

A - 0.232 - 5.92 - b 0.014 0.026 0.36 0.66 2 b1 0.014 0.023 0.36 0.58 3 b2 0.045 0.065 1.14 1.65 - b3 0.023 0.045 0.58 1.14 4 c 0.008 0.018 0.20 0.46 2 c1 0.008 0.015 0.20 0.38 3 E 0.500 0.610 12.70 15.49 - e 0.100 BSC 2.54 BSC - eA 0.600 BSC 15.24 BSC - eA/2 0.300 BSC 7.62 BSC - L 0.125 0.200 3.18 5.08 - Q 0.015 0.060 0.38 1.52 5 S1 0.005 - 0.13 - 6 S2 0.005 - 0.13 - 7  90o 105o 90o 105o - aaa - 0.015 - 0.38 - bbb - 0.030 - 0.76 - ccc - 0.010 - 0.25 - M - 0.0015 - 0.038 2 N2 8 2 8 8 Rev. 0 5/18/94

HS-1840ARH, HS-1840AEH, HS-1840BRH, HS-1840BEH FN4355 Rev 6.00 Page 7 of 7 May 23, 2013 Ceramic Metal Seal Flatpack Packages (Flatpack) NOTES: 1. Index area: A notch or a pin one identification mark shall be locat- ed adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. Alternately, a tab (dimension k) may be used to identify pin one. 2. If a pin one identification mark is used in addition to a tab, the lim- its of dimension k do not apply. 3. This dimension allows for off-center lid, meniscus, and glass overrun. 4. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. The maximum lim- its of lead dimensions b and c or M shall be measured at the cen- troid of the finished lead surfac es, when solder dip or tin plate lead finish is applied. 5. N is the maximum number of terminal positions. 6. Measure dimension S1 at all four corners. 7. For bottom-brazed lead packages, no organic or polymeric mate- rials shall be molded to the bottom of the package to cover the leads. 8. Dimension Q shall be measured at the point of exit (beyond the meniscus) of the lead from the body. Dimension Q minimum shall be reduced by 0.0015 inch (0.038mm) maximum when sol- der dip lead finish is applied. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling dimension: INCH. -D- -C-

0.004 H A - BM DS S

-A- -B-

0.036 H A - BM DS S

e E A Q L D A SEATING AND LE2 E3 E3 BASE PLANE -H- b C M (c) (b) SECTION A-A BASE LEAD FINISH METAL PIN NO. 1 ID AREA A M K28.A MIL-STD-1835 CDFP3-F28 (F-11A, CONFIGURATION B)

28 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE

A 0.045 0.115 1.14 2.92 - b 0.015 0.022 0.38 0.56 - b1 0.015 0.019 0.38 0.48 - c 0.004 0.009 0.10 0.23 - c1 0.004 0.006 0.10 0.15 - D - 0.740 - 18.80 3 E 0.460 0.520 11.68 13.21 - E1 - 0.550 - 13.97 3 E3 0.030 - 0.76 - 7 e 0.050 BSC 1.27 BSC - k 0.008 0.015 0.20 0.38 2 L 0.250 0.370 6.35 9.40 - Q 0.026 0.045 0.66 1.14 8 S1 0.00 - 0.00 - 6 N2 8 2 8- Rev. 0 5/18/94