HRH20N50ANX SHUNYE | Alldatasheet

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Technical content

500V N-Channel Planar MOSFET MOSFET Metal Oxide Semiconductor Field Effect Transistor 500V N-Channel Planar MOSFET 500V N-Channel Planar MOSFET Power Transistor HRH20N50ANx Data Sheet Rev. 2023 V1.1

Description

500V N-Channel Planar MOSFET HRH20N50ANx is HRM high voltage MOSFET family based on advanced planar stripe DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies.

Features

l RDSON=0.17Ω @Vgs=10V, Id=10A ⚫ Ultra Low gate Charge(typical 73.4nC) ⚫ Low Crss (typical 4.8pF) ⚫ Fast switching capability ⚫ 100% avalanche tested ⚫ Improved dv/dt capability

Applications

l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) (PFC) l Charger Key Performance Parameters Parameter Value Unit VDS 500 V RDS(on),typ 0.17 Ω Qg,typ 73.4 nC ID 20 A ID,pulse 80 A Device Marking and Package Information Device Package Marking HRH20N50ANF TO-220F H20N50ANF HRH20N50ANF TO-220F H20N50ANFT HRH20N50ANB TO-263 H20N50ANB HRH20N50ANV TO-3P H20N50ANV HRH20N50ANW TO-247 H20N50ANW 500V N-Channel Planar MOSFET Drain Source Gate TO-220F G D S G D S TO-247 TO-263 G S D G D S TO-3P

Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage(VGS=0V) VDS 500 V Continuous Drain Current 1) TC = 25ºC ID A TC = 100ºC 12.5 Pulsed Drain Current 2) ID,pulse 80 A Gate-Source Voltage VGS ±30 V Single Pulse Avalanche Energy 3) EAS 2000 mJ Peak Diode Recovery dv/dt 4) dv/dt 5 V/ns Power Dissipation For TO-220F PD 128 W Power Dissipation For TO-3P/247/263 321 Continuous Diode Forward Current IS 20 A Diode Pulsed Current 2) IS,pulse 80 Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC Thermal Resistance For TO-220F Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 0.97 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 80 Thermal Resistance For TO-3P/247/263 Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 0.39 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 62 Notes 1) Limited by maximum junction temperature. 2) Repetitive Rating: Pulse width limited by maximum junction temperature. 3) L=10mH, ID=20A, RG=25Ω, VDD=100V, Start TJ=25℃. 4) ISD ≤20A, di/dt≤100A/μs, VDD≤BVDSS, Start TJ=25℃.

Electrical Characteristics TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 500 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 500V VGS = 0V, TJ = 25ºC -- -- 1 μA VDS = 500V, VGS = 0V, TJ = 150ºC -- -- 100 Gate-Source Leakage Current IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 -- 4 V Drain-Source On-State-Resistance RDS(on) VGS = 10V, ID = 10A -- 0.17 0.27 Ω Gate Resistance RG f = 1.0MHz open drain -- 1.2 -- Ω Dynamic Characteristics Input Capacitance Ciss VGS = 0V, VDS = 25V f = 1.0MHz -- 4257 -- pFOutput Capacitance Coss -- 234 -- Reverse Transfer Capacitance Crss -- 4.8 -- Total Gate Charge Qg VDD = 400V, ID = 20A VGS = 10V -- 70.1 -- nCGate-Source Charge Qgs -- 21.6 -- Gate-Drain Charge Qgd -- 15.9 -- Gate Plateau Voltage VPlateau -- 5.1 -- V Turn-on Delay Time td(on) VDD = 250V, ID = 20A RG = 25Ω, VGS = 10V -- 56 -- ns Turn-on Rise Time tr -- 35 -- Turn-off Delay Time td(off) -- 230 -- Turn-off Fall Time tf -- 57 -- Drain-Source Body Diode Characteristics Body Diode Forward Voltage VSD TJ = 25ºC, ISD = 20A VGS = 0V -- -- 1.2 V Reverse Recovery Time trr VR = 400V IF = 20A, diF/dt = 100A/μs -- 270 -- ns Reverse Recovery Charge Qrr -- 3.4 -- μC

Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform

A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0 0.13 0.25 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.30 0.38 0.53 D1 8.50 8.70 8.90 D4 6.60 --- --- E 9.86 10.16 10.36 SYMBOL MIN NOM MAX E5 7.06 --- --- e 2.54 BSC H 14.70 15.10 15.50 H2 1.07 1.27 1.47 L 2.00 2.30 2.60 L1 1.40 1.55 1.70 L4 0.25 BSC θ 0° 5° 9° Ɵ 0° -- 8° Ɵ1 1° 3° 5°

A 4.5 4.7 4.9 A1 2.34 2.54 2.74 A3 2.56 2.76 2.96 b 0.7 --- 0.95 b1 1.18 --- 1.43 b2 --- --- 1.55 c 0.4 0.5 0.65 D 15.57 15.87 16.17 D1 15.35 15.675 15.95 D2 9.6 9.875 10.15 E 9.96 10.16 10.36 e 2.54 BSC H1 6.48 6.68 6.88 L 12.68 12.98 13.28 L1 --- --- 3.5

A 4.6 4.8 5.0 A1 1.2 1.4 1.6 b 0.8 1 1.2 b1 2.8 3 3.2 b2 1.8 2 2.2 c 0.5 0.6 0.7 c1 1.45 1.55 1.65 D 15.45 15.65 15.85 E 13.7 13.9 14.1 E1 3.3REF E2 3.2REF SYMBOL MIN NOM MAX E3 12.9REF F1 13.4 13.6 13.8 F2 9.4 9.6 9.8 L 39.7 39.9 40.1 L1 23.2 23.4 23.6 L2 19.7 19.9 20.1 ø 6.9 7 7.1 G 4.6 4.8 5.0 e 5.45TYP H 5.0REF h 0.0 0.15 0.3

A 4.9 5 5.1 A1 2.31 2.41 2.51 A2 1.9 2 2.1 a 0 --- 0.15 a' 0 --- 0.15 b 1.16 --- 1.26 b1 1.15 1.2 1.22 b2 1.96 --- 2.06 b3 1.95 2 2.02 b4 2.96 --- 3.06 b5 2.96 3 3.02 b6 --- --- 2.25 b7 --- --- 3.25 c 0.59 --- 0.66 c1 0.58 0.6 0.62 D 20.9 21 21.1 D1 16.25 16.55 16.85 SYMBOL MIN NOM MAX D2 1.05 1.17 1.35 E 15.7 15.8 15.9 E1 13.1 13.3 13.5 E2 4.4 4.5 4.6 E3 2.4 2.5 2.6 e 5.436 BSC L 19.8 19.92 20.1 L1 --- --- 4.3 M 0.35 --- 0.95 P 3.4 3.5 3.6 P1 7 --- 7.4 P2 2.4 2.5 2.6 Q 5.6 --- 6 S 6.05 6.15 6.25 T 9.8 --- 10.2 U 6 --- 6.4