HRF3205 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 100A, 55V (See Note)
  • Low On-Resistance, rDS(ON) = 0.008Ω
  • Temperature Compensating PSPICE® Model
  • Thermal Impedance SPICE Model
  • UIS Rating Curve
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB JEDEC TO-263AB

Ordering Information

HRF3205S TO-263AB HRF3205S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST. D G S DRAIN SOURCE GATE DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) Data Sheet June 1999 File Number 4447.4

Absolute Maximum Ratings TC = 25oC, Unless Othewise Specified Drain Current 100 390 A A 175 1.17 W W/oC Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V 55 - - V Gate to Source Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA2 - 4 V Zero Gate Voltage Drain Current I DSS VDS = 55V, VGS = 0V - - 25 µA VDS = 44V, VGS = 0V, TC = 150oC - - 250 µA Gate to Source Leakage Current I GSS VGS =±20V - - 100 nA Breakdown Voltage Temperature Coefficient ΔV(BR)DSS / ΔTJ Reference to 25oC, ID = 250µA - 0.057 - V Drain to Source On Resistance r DS(ON) ID = 59A, VGS = 10V (Figure 4) - 0.0065 0.008 Ω Turn-On Delay Time t d(ON) VDD = 28V, ID ≅ 59A, R L = 0.47Ω , VGS = 10V, R GS = 2.5Ω -1 4 - n s Rise Time t r - 100 - ns Turn-Off Delay Time t d(OFF) -4 3 - n s Fall Time t f -7 0 - n s Total Gate Charge Q g VDD = 44V, ID ≅ 59A, VGS = 10V, Ig(REF) = 3mA (Figure 6) - - 170 nC Gate to Source Charge Q gs - - 32 nC Gate to Drain “Miller” Charge Q gd - - 74 nC Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 5) - 4000 - pF Output Capacitance C OSS - 1300 - pF Reverse Transfer Capacitance C RSS - 480 - pF Internal Source Inductance L S Measured From the Contact Screw on Tab to Center of Die Modified MOSFET Symbol Showing the Internal Devices In- ductances - 7.5 - nH Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Internal Drain Inductance L D Measured From the Source Lead, 6mm (0.25in) From Head- er to Source Bonding Pad - 4.5 - nH Thermal Resistance Junction to Case R θJC - - 0.85 oC/W Thermal Resistance Junction to Ambient R θJA TO-220 - - 62 oC/W TO-263 (PCB Mount, Steady State) - - 40 oC/W LS LD G D S HRF3205, HRF3205S

FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

SUBCKT HRF3205P3 2 1 3 ; rev 7/25/97 CA 12 8 4.9e-9 CB 15 14 4.9e-9 CIN 6 8 3.45e-9 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 57 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 2.6e-9 LSOURCE 3 7 1.1e-9 K1 LGATE LSOURCE 0.0085 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 3.5e-4 RGATE 9 20 0.36 RLDRAIN 2 5 10 RLGATE 1 9 26 RLSOURCE 3 7 11 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 4.5e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*550),3))} .MODEL DBREAKMOD D (RS = 0.06 IKF = 30 TRS1 = -3e-3 TRS2 = 3e-6) .MODEL DPLCAPMOD D (CJO = 4.45e-9 IS = 1e-30 N = 1 M = 0.88 VJ = 1.45) .MODEL MMEDMOD NMOS (VTO = 2.93 KP = 9.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1) .MODEL MSTROMOD NMOS (VTO = 3.23 KP = 150 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 2.35 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 10) .MODEL RBREAKMOD RES (TC1 = 8e-4 TC2 = 4e-6) .MODEL RDRAINMOD RES (TC1 = 8e-2 TC2 = 5e-6) .MODEL RSLCMOD RES (TC1 = 1e-4 TC2 = 1.05e-6) .MODEL RSOURCEMOD RES (TC1 = 1e-4 TC2 = 1.5e-5) .MODEL RVTHRESMOD RES (TC1 = -2.3e-3 TC2 = -1.2e-5) .MODEL RVTEMPMOD RES (TC1 = -2.2e-3 TC2 = -7e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -9 VOFF= -4) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4 VOFF= -9) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= 2.5) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.5 VOFF= 0) .ENDS NOTE: For further discussion of the PSPICE model, consultA New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. + - + - 8 + RBREAK RVTEMP VBAT RVTHRES IT 17 18 S1A S1B S2A S2B CA CB EGS EDS MWEAK EBREAK DBODY RSOURCE SOURCE 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 1621 MMED MSTRO DRAIN LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 RSLC2 GATE RGATE EVTEMP ESG LGATE RLGATE HRF3205, HRF3205S

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 SPICE Thermal Model REV 25 July 97 HRF3205 CTHERM1 7 6 2.53e-5 CTHERM2 6 5 1.38e-3 CTHERM3 5 4 7.00e-3 CTHERM4 4 3 2.50e-2 CTHERM5 3 2 1.33e-1 CTHERM6 2 1 5.75e-1 RTHERM1 7 6 7.78e-4 RTHERM2 6 5 8.55e-3 RTHERM3 5 4 3.00e-2 RTHERM4 4 3 1.42e-1 RTHERM5 3 2 2.65e-1 RTHERM6 2 1 2.33e-1 RTHERM4 RTHERM6 RTHERM5 RTHERM3 RTHERM2 RTHERM1 CTHERM4 CTHERM6 CTHERM5 CTHERM3 CTHERM2 CTHERM1

7 JUNCTION

HRF3205, HRF3205S