HRF3205 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 100A, 55V (See Note)  Low On-Resistance, rDS(ON) = 0.008Ω  Temperature Compensating PSPICE® Model  Thermal Impedance SPICE Model  UIS Rating Curve  Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB JEDEC TO-263AB

Ordering Information

HRF3205S TO-263AB HRF3205S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST. D G S DRAIN SOURCE GATE DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) Data Sheet December 2001

©2001 Fairchild Semiconductor Corporation HRF3205, HRF3205S Rev. B Absolute Maximum Ratings TC = 25oC, Unless Othewise Specified Drain Current 100 390 A A 175 1.17 W W/oC Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V 55 - - V Gate to Source Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA2 - 4 V Zero Gate Voltage Drain Current I DSS VDS = 55V, VGS = 0V - - 25 µA VDS = 44V, VGS = 0V, TC = 150oC - - 250 µA Gate to Source Leakage Current I GSS VGS = ±20V - - 100 nA Breakdown Voltage Temperature Coefficient ∆V(BR)DSS / ∆TJ Reference to 25oC, ID = 250µA - 0.057 - V Drain to Source On Resistance r DS(ON) ID = 59A, VGS = 10V (Figure 4) - 0.0065 0.008 Ω Turn-On Delay Time t d(ON) VDD = 28V, ID ≅ 59A, R L = 0.47Ω , VGS = 10V, R GS = 2.5Ω -1 4 - n s Rise Time t r - 100 - ns Turn-Off Delay Time t d(OFF) -4 3 - n s Fall Time t f -7 0 - n s Total Gate Charge Q g VDD = 44V, ID ≅ 59A, VGS = 10V, Ig(REF) = 3mA (Figure 6) - - 170 nC Gate to Source Charge Q gs - - 32 nC Gate to Drain “Miller” Charge Q gd - - 74 nC Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 5) - 4000 - pF Output Capacitance C OSS - 1300 - pF Reverse Transfer Capacitance C RSS - 480 - pF Internal Source Inductance L S Measured From the Contact Screw on Tab to Center of Die Modified MOSFET Symbol Showing the Internal Devices In- ductances -7 . 5 - n H Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Internal Drain Inductance L D Measured From the Source Lead, 6mm (0.25in) From Head- er to Source Bonding Pad -4 . 5 - n H Thermal Resistance Junction to Case RθJC - - 0.85 oC/W Thermal Resistance Junction to Ambient R θJA TO-220 - - 62 oC/W TO-263 (PCB Mount, Steady State) - - 40 oC/W LS LD G D S HRF3205, HRF3205S

FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

©2001 Fairchild Semiconductor Corporation HRF3205, HRF3205S Rev. B SUBCKT HRF3205P3 2 1 3 ; rev 7/25/97 CA 12 8 4.9e-9 CB 15 14 4.9e-9 CIN 6 8 3.45e-9 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 57 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 2.6e-9 LSOURCE 3 7 1.1e-9 K1 LGATE LSO URCE 0.0085 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 3.5e-4 RGATE 9 20 0.36 RLDRAIN 2 5 10 RLGATE 1 9 26 RLSOURCE 3 7 11 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 4.5e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*550),3))} .MODEL DBREAKMOD D (RS = 0.0 6IKF = 30 TRS1 = -3e- 3TRS2 = 3e-6) .MODEL DPLCAPMOD D (CJO = 4.45e- 9IS = 1e-3 0N = 1 M = 0.88 VJ = 1.45) .MODEL MMEDMOD NMOS (VTO = 2.93 KP = 9.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1) .MODEL MSTROMOD NMOS (VTO = 3.23 KP = 150 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 2.35 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 10) .MODEL RBREAKMOD RES (TC1 = 8e- 4TC2 = 4e-6) .MODEL RDRAINMOD RES (TC1 = 8e-2 TC2 = 5e-6) .MODEL RSLCMOD RES (TC1 = 1e-4 TC2 = 1.05e-6) .MODEL RSOURCEMOD RES (TC1 = 1e-4 TC2 = 1.5e-5) .MODEL RVTHRESMOD RES (TC1 = -2.3e-3 TC2 = -1.2e-5) .MODEL RVTEMPMOD RES (TC1 = -2.2e- 3TC2 = -7e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -9 VOFF= -4) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4 VOFF= -9) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= 2.5) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.5 VOFF= 0) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. + - + - 8 + RBREAK RVTEMP VBAT RVTHRES IT 17 18 S1A S1B S2A S2B CA CB EGS EDS MWEAK EBREAK DBODY RSOURCE SOURCE 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 1621 MMED MSTRO DRAIN LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 RSLC2 GATE RGATE EVTEMP ESG LGATE RLGATE HRF3205, HRF3205S

©2001 Fairchild Semiconductor Corporation HRF3205, HRF3205S Rev. B SPICE Thermal Model REV 25 July 97 HRF3205 CTHERM1 7 6 2.53e-5 CTHERM2 6 5 1.38e-3 CTHERM3 5 4 7.00e-3 CTHERM4 4 3 2.50e-2 CTHERM5 3 2 1.33e-1 CTHERM6 2 1 5.75e-1 RTHERM1 7 6 7.78e-4 RTHERM2 6 5 8.55e-3 RTHERM3 5 4 3.00e-2 RTHERM4 4 3 1.42e-1 RTHERM5 3 2 2.65e-1 RTHERM6 2 1 2.33e-1 RTHERM4 RTHERM6 RTHERM5 RTHERM3 RTHERM2 RTHERM1 CTHERM4 CTHERM6 CTHERM5 CTHERM3 CTHERM2 CTHERM1

7 JUNCTION

HRF3205, HRF3205S

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ Rev. H4 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET STAR*POWER is used under license VCX™