HR1A4A KEXIN | Alldatasheet
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Up to 2A High Current Drives Such As IC Outputs and Actuators Available On-chip Bias Resistor Low Power Consumption During Drive Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage V CBO -60 V Collector-Emitter Voltage V CEO -60 V Emitter-Base Voltage V EBO -10 V Collector Current (DC) I C(DC) -1.0 A Collector Current (Pulse) I C(pulse) *1 -2.0 A Base Current (DC) I B(DC) -0.02 A Total Power Dissipation P T *2 2.0 W Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 *1 PW 10ms, Duty Cycle 50% *2 When 0.7mm x 16cm2 ceramic board is used. Digital Transistors HR1A4A Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current I CBO VCB = -60V, IE = 0 -100 nA VCE = -2.0V , IC = -0.1A 150 VCE = -2.0V , IC = -0.5A 100 VCE = -2.0V , IC = -1.0A 50 Collector Saturation Voltage V CE(sat) *I C = -500mA, IB = -10mA 0.20 0.35 V Low Level Input Voltage V IL * VCE = -5.0V, IC = -100 A -0.3 -1.5 V Input Resistance R 1 Emitter-Base Resistance R 2 71 0 1 3 k *P W 350 s, Duty Cycle 2% DC Current Gain h FE *
www.kexin.com.cn2 SMD Type Transistors Electrical Characteristics Curves Equivalent Circuit HR1A4A Marking Marking MX
www.kexin.com.cn 3 SMD Type Transistors HR1A4A