HM3-6116-9 ETC1 | Alldatasheet
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Technical content
FEATURES
= ACCESS TIME «= 600 MILS WIDTH PACKAGE COMMERCIAL : 120 NS (MAX) = TTLCOMPATIBLE INPUTS AND OUTPUTS INDUSTRIAL : 120 NS (MAX) » ASYNCHRONOUS MILITARY : 120 NS (MAX) = SINGLE 5 VOLT SUPPLY = VERY LOW POWER CONSUMPTION = EQUAL CYCLE AND ACCESS TIME ACTIVE : 240 mW (TYP) = NO CLOCK AND STROBES REQUIRED ‘STANDBY : 2.0 uW (TYP) = GATED INPUTS DATA RETENTION : 4 .W (TYP) = WIDE TEMPERATURE RANGE : ~ 55 TO + 125°C INTRODUCTION The HM 6116 is a very low power CMOS static RAM _—_(VIH). Easy ‘expansion is provided by an active organized as 2048 x 8 bits. Itis manufactured using the low chip ‘soloct (C8), an active low output enable (OE) MHS high performance CMOS technology. and three state drivers. 120 ns access time for commercial temperature range The HM 6116 are TTL compatible and operate from is available with a maximum power consumption of only single 5 V supply thus simplifying system design. 385 mW. ‘The HM 6116 is 100 % processed following the test The HM 6116 features fully static operation requiringno methods of MIL STD 883C and/or ESA/SCC 9000, ‘extemal clocks or timing strobes. Thanks to the special making it ideally suitable for military/space applications input butfer “gated inputs”, the circuit remains in stand that demand superior levels of performance and by mode when the €8 goes to an intermediate level reliability. The information contained herein is subject to change without notice. No responsibility is assumed by MATRA MHS SA for using this publication and/or circuits described herein : nor for any possible infringements of patents or other rights of third parties which may result from its use. HM 6116/Rev.2.0 Dad
Plastic 600 mils, 24 pins, DIL. LCC, 32 pins. Ceramic 600 mils, 24 pins, DIL. art ab vec zeeedee aes eorIAS wala, EEE aacla 210W a5 Ys anit 40 ass OF OE epee igre A2c6 19. A10 te i Ad? 191 cs mS Pats Aods 170 07 x a nix z vo ot} 161/06 i Bs Wo 110 19 v0 5 aad GATT Tt tp ee vo2qt1 14004 ws “ wy GNDq{t2 13110 3 233%938 Pinout DIL 24 pins (top view) Pinout LCC 2 pins (top view) BLOCK DIAGRAM “Mm—T) ‘| sos H ~oS] A, son Ea} ta pO 28 MEMORY MATRIX “C—T) i 3 sotptif LL) 4 TTT Ss +vooReur em | atin Oo fl mas 4 HM 6116Rev.2.0
VO0-VO7 : Input/Output | OE — : Output enable oF [GND :Ground | voo AO vo1 a2 103 TRUTH TABLE Me tos [CS] OE | W | DATAIN MODE | 4 ig8 [a [xix] 2 | 2 | Dowoee pepe ray 2 va te s H 2 | We pepe eval [2 we GND L = low, H = high, X = Hor L, Z = high impedance.
ELECTRICAL CHARACTERISTICS
Supply voltage to GND potential : - 0.3 V to + 7.0 V Storage temperature : - 65°C to + 150°C Input or Output voltage applied : (Gnd - 0.3 V) to (Vec +0.3V) OPERATING RANGE OPERATING VOLTAGE Commercial (-5) Voc + 10 % _ orc to 70°C RECOMMENDED DC OPERATING CONDITIONS PARAMETER DESCRIPTION MINIMUM | TYPICAL MAXIMUM [UNIT [Gnd [Ground S00 Note: 1, ViLmin=-03 Vor 1.0 Vpuse width 60 ns. ~ ~ CAPACITANCE Gin (2 | input capacitance = PF [oot | Outtcapactancs | =| Note: 2. TA = 25°C, f= 1 MHz, Voc = 5.0 V, these parameters are not 100 % tested. HM 6116/Rev.2.0. os Me
sS HM 6116 — DC PARAMETERS { PARAMETER | DESCRIPTION TYPICAL UNIT [ioc () | eputieaage cunent —_ uA [oz (@) | Oututtstage cunt : uA VOH _(4) | Output high vottage 24 - = Notes: 3. Grd < Vin < Vee, Gnd < Vout < Voc output disabled specified #10 uA for the HM61162. — 4, Vor min, IOL = 3.2 mA, IOH = - 1.0 mA. CONSUMPTION FOR COMMERCIAL (- 5) SPECIFICATION 6116 6116 _smmecn | paramere | 8ST SS | oer | var | [iooss (6) | Standby suppiycunent | 30 | 20 | 20 | mA | max _| (ccsB1 (6) | Standby supply current | 2000.0 | 100.0 | 40 | WA | max icc (7) | Operating supply current 70.0 __70.0 70.0 mA max ICCOP —_(8) | Operating supply current 70.0 70.0 70.0 mA max CONSUMPTION FOR INDUSTRIAL (- 9) SPECIFICATION ; 6116 6116 6116 SYMBOL PARAMETER a Lo B-9 UNIT VALUE ICCSB__ (6) | Standby supply current 45 40 mA max ICCSB1__(6) | Standby supply current 2000.0 | 500.0 pA max Icc (7) | Operating supply current 80.0 80.0 mA | max | ICCOP@) | Operating supp¥ycurent | e00 | eo | e00 | mA | max | CONSUMPTION FOR MILITARY (- 2) SPECIFICATION SYMBOL PARAMETER oe a“ unt | VALUE | iGCS5” (9) | Sendbysoppivcurent | 50 | 45 | mA | max_| ICCSB1 (6) | Standby supply current __ 3000.0 __1500.0 max 1c (7)_| Operating supply current a) 85.0 mA | max IccoP (8) | Operating supply current ___ 85.0 85.0 mA max | 9 | Nowe SSS ~ 6. CS< Vec-0.3V, lout=0mA. 7. CS < VIL, lout = 0 mA, Vin = Gnd/Vec. ‘8. Voc max, lout =0 mA, f = 1 MHz and 5 mAMHz, Vin = GndVoc. is MS 8 HM 6116/Rev.2.0
si metif| DATA RETENTION MODE MHS CMOS RAMs are designed with battery backup 2. Output Enable (OE) should be held high to keep the in mind. Data retention voltage and supply current are RAM outputs high impedance, minimizing power guaranteed over temperature. The following rules dissipation. insure data retention : 3. CS and OE must be kept between Voc + 0.3 V and 1. Chip select (6S) must be held high during data Ha % of Voc during the power up and power down retention ; within Voc to Voc - 0.2 V. sitions. TIMING DATA RETENTION MODE ICDR: 1A: VoR DATA RETENTION CHARACTERISTICS VoooR | Wester dataretertion 20 | = | it TCDR Chip deselect to data retenti | 00 ns | ‘on time [TR | Operation recovery time Tavav(i) [OP ICCDR1 = (11)| Data retention current ] | HM-6116B-9 | - o4 5.0 nA | HM-6116L-5 | - 20 30.0 HA HM-61161.9 | - 20 200.0 nA HM-6116L-2 - 20 600.0 BA ICCDR2 — (11)| Data retention current @3.0 V: HM-61168-5 - 03 1.0 nA HM-6116B-9 - 03 7.0 HA HM-6116L-5 - 3.0 45.0 HA HM-6116L-9 - 3.0 300.0 WA HM-6116L-2 - __ 30 900.0 HA Notes: 9. TA= 25°C. 10. TAVAV = Rad cyce tin. 11. CS = Voc, Vin = GndiVoc, this parameter is only tested to Voc = 2 V. HM ert8mer20. °7 MAS
— HM 6116 —— ny AC PARAMETERS AC CONDITIONS : Input pulse levels :Gnd to 3.0V Input timing reference levels : 1.5 V Input rise :10ns Output load +1 TTL gate + 100 pF WRITE CYCLE : COMMERCIAL (- 5), INDUSTRIAL (- 9) AND MILITARY (- 2) SPECIFICATION 6116 [_swwwoe | ranweren | ens 9-2 var |vaLue| [TAVAV | Witocycetime | 20s | min | TAVWL. | Address set-up time _0 [ns | TAVWH ‘Address valid to end of write 105 [ns | [TOWH _[Datasetuptime | Bins | in| TELWH CS low to write end 70 | ns | omin_ | TWLOZ__(12)| Write lowtohighZ | 50 [ns | max | [IWLWH [Write pulsewidth | «| rs | min TWHAX [Address hold to end of write [ns _| TWHDX Data hold time [ns_| [TWHOX (12) WrtehightolowZ SS ns |min Note: 12. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. WRITE CYCLE 1 woes KY Ls s NOON, Qe ae al) 5 = Fiat | roy on SERRE ARES WRITE CYCLE 2 way anoness —E=_= OTE SSN onaour BREE oD [ear hype on BRR OK BARKERS is MS os HM 6116/Rev.2.0
READ CYCLE : COMMERCIAL (- 5), INDUSTRIAL (- 9) AND MILITARY (- 2) SPECIFICATION 6116 __snweot | parwweren | oytta-e | ow | var] [TAWA [Witegyaeime [Od || TAVQV Address access time . . 120 - ns max TAVOX ‘Address valid to low Z 10 : ns | min 0 | [TeLax[CSewwoiw? | Os min | TEHOZ | CShightohighZ | ns | max TGLOV Output Enable access time 80 ns | max TGLOX OE low to low Z 10 | ns min TGHQZ OE high to high Z 40 [ns | max | READ CYCLE TAVAV TAVQV GHG ~ W777 77/77 e \\ LLL LLL Qa. La Zi, an \\ Yy V SC V7 <0:8 KOR DATAOUT rT 60 RRXKRY ‘Note : W high for a read cycle. vaierieme20, oe Ms
7, At 1 24! vec Fe a> zal re FS. & 3 oe Fo Ri = 220 per row or 1 KQ per pin Fé. 4 a 0 R2 = 2.2 KQ per driver £3. ns aoe si Fo = 25 KHz + 20% Fe: a 6 en FI0 Fn=1/2Fn-1 FY a 7 i reery s2 ‘SO, $1, S2: programmable signals Fo. ae? we Fis for write / read cycles Fat Riv Fa]? 16) [rrere “> vCC =5.5V in RAWAL a GR ™ 1 14 ono 2 pe ia AW
ORDERING INFORMATION
HM 3 - 616 L -5:R -2 : Miltary -5 Commercial 2kx 8 general purpose -6 : 100% 25°C Probe static RAM -9 Industrial 1883. : MIL STD 883 Class B or S DB: Dice Miltary program 0- Chip form L = Low power R___: Tape & Reel option 1 - Ceramic 24 pins Blank = Standard RD: Tape & Reel / Dry pack option 600 mils B = very Low Power D __: Dry pack option 3- Plastic 24 pins {only for -6/-8 version) 600 mils 4-LCC 32 pins RNAS 10 HM 6116/Rev.2.0