HLB124-TO-220 ANALOGICTECH | Alldatasheet
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Technical content
UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 www.unisonic.com.tw QW-R203-029,A NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications.
FEATURES
- High Speed Switching * Low Saturation Voltage * High Reliability TO-220 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: HLB124L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO 600 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage V EBO 8 V Collector Current (DC) Ic 2 A Collector Current (PULSE) I CP 4 A Base Current (DC) I B 1 A Base Current (PULSE) I BP 2 A Total Power Dissipation (Tc=25℃) Pc 35 W Junction Temperature T J 150 ℃ Storage Temperature T STG -40 ~ +150 ℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV CBO I C = 1mA 600 V Collector-Emitter Breakdown Voltage BV CEO I C = 10mA 400 V Emitter-Base Breakdown Voltage BV EBO I E = 1mA 8 V Collector Cutoff Current ICBO VCB = 600V 10 µA Emitter Cutoff Current IEBO VEB = 9V, IC = 0 10 µA *VCE (sat) 1 I C = 0.1A, IB = 10mA 0.3 V C-E Saturation Voltage *VCE (sat) 2 I C = 0.3A, IB = 30mA 0.8 V *VBE (sat) 1 I C = 0.1A, IB = 10mA 0.9 V B-E Saturation Voltage *VBE (sat) 2 I C = 0.3A, IB = 30mA 1.2 V *hFE1 V CE = 5V, IC = 0.3A 10 40 *hFE2 V CE = 5V, IC = 0.5A 10 DC Current Gain *hFE3 V CE = 5V, IC = 1A 6 Gain-Bandwidth Product f T V CE = 10V, IC = 0.3A, f=1MHz 15 MHz *Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2% CLASSIFICATION OF HFE1
UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 www.unisonic.com.tw QW-R203-029,A CHARACTERISTICS CURVE hFE Collector Current , I C (mA) 10 1000 Current Gain & Collector Current 10000100 100 25℃ 125℃ 75℃ hFE @ VCE = 5V Saturation Voltage (mV) Collector Current , I C (mA) 10 1000 Saturation Voltage & Collector Current 100 10000100 100000 125℃ VCE(sat ) @ IC = 10IB 25℃ 75℃ 10000 100 100 Collector Current, I C (mA) 10 1000 1000 10000100 10000 125℃ 75℃
100 On Voltage (mV)
Collector Current (mA) 10 1000 On Voltage & Collector Current 10000100 1000 VCE = 5V Saturation Voltage & Collector Current Saturation Voltage (mV) 25℃ VBE(sat) @ IC = 10IB Reverse Biased Voltage (V) 10010 100 Cob 0.1 0.1 Switching Time (µs) Collector Current (A) Swithing Time & Collector Current 101 Ton Capacitance & Reverse-Biased Voltage Capacitance (Pf) TSTG Tf VCC = 100V, IC = 5IB1 = 5IB2 RANK B1 B2 B3 B4 B5 B6 Range 10 ~ 17 13 ~ 22 18 ~ 27 23 ~ 32 28 ~ 37 33 ~ 40
UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 3 www.unisonic.com.tw QW-R203-029,A Collector Current (mA) Forward Voltage (V) 10 100 Safe operating Area 100 1000 10000 PT = 1ms PT = 100ms PT = 1s1000 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.