HLB122 UTC | Alldatasheet
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Technical content
UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 www.unisonic.com.tw QW-R213-014,A NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC HLB122 is a medium power transistor designed for use in switching applications.
FEATURES
- High breakdown voltage * Low collector saturation voltage * Fast switching speed TO-251 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:HLB122L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO 600 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage V EBO 6 V Collector Current (DC) I C 800 mA Collector Current (Pulse) I CF 1600 mA Base Current (DC) I B 100 mA Base Current (Pulse) I BP 200 mA Total Power Dissipation (Tc=25℃) PC 20 W Junction Temperature T J 150 ℃ Storage Temperature T STG -40 ~ +150 ℃
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV CBO I C = 100µA 600 V Collector-Emitter Breakdown Voltage BV CEO I C = 10mA 400 V Emitter-Base Breakdown Voltage BV EBO I E = 10µA 6 V Collector Cutoff Current I CBO V CB = 600V 10 µA Collector Cutoff Current I CEO V CB = 400V 10 µA Emitter Cutoff Current I EBO V EB = 6V 10 µA *VCE (sat) 1 IC = 100mA, IB = 20mA 400 mVC-E Saturation Voltage *VCE (sat) 2 IC = 300mA, IB = 60mA 800 mV B-E Saturation Voltage *V BE (sat) I C = 100mA, IB = 20mA 1 V *hFE1 V CE = 10V, IC = 0.1A 10 40 DC Current Gain *hFE2 V CE = 10V, IC = 0.5A 10 Fall Time T f V CC = 100V, IC= 0.3A, IB1= -IB2= 0.06A 0.6 µS *Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 www.unisonic.com.tw QW-R213-014,A CLASSIFICATION OF HFE1 RANK B1 B2 B3 B4 B5 B6 Range 10 ~ 17 13 ~ 22 18 ~ 27 23 ~ 32 28 ~ 37 33 ~ 40 CHARACTERISTICS CURVE hFE Collector Current, I C (mA) Current Gain & Collector Current 1000100 100 hFE @ VCE = 10V Saturation Voltage (mV) Collector Current, I C (mA) 10 100 Saturation Voltage & Collector Current 100 1000 10000 VCE(sat) @ IC = 5IB 1000 125℃ 25℃ 75℃ 75℃ 25℃125℃ 100 ON Voltage, VBE(on) (mV) ON Voltage & Collector Current 1000100 1000 VBE (on)@ VCE = 10V Collector Current(mA) 100 Collector Current , IC (mA) 100 1000 1000 10000 Saturation Voltage & Collector Current Saturation Voltage (mV) VBE(sat) @ IC = 5IB 25℃ 75℃ 125℃ 100 Collector Current (mA) Capacitance & Reverse-Biased Voltage Capacitance, Cob (pF) 0.1 Reverse-Biased Voltage (V) 10 1001 1 Forward Biased Voltage (V) Safe Operating Area 100010 10000 100 1000 100 PT=1ms PT=100ms PT=1 s
UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 3 www.unisonic.com.tw QW-R213-014,A 100 0.1 Switching Time (µs) Collector Current (mA) Switching Time & Collector Current 1000 TSTG Ton Tf VCC = 45V, IC = 5IB1 = -5IB2 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.