HLB121 UTC | Alldatasheet
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Technical content
UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 www.unisonic.com.tw QW-R213-015,A NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC HLB121 is a medium power transistor designed for use in switching applications.
FEATURES
- High breakdown voltage * Low collector saturation voltage * Fast switching speed TO-251 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:HLB121L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO 600 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage V EBO 6 V Collector Current (DC) I C 300 mA Collector Current (Pulse) I CP 600 mA Base Current (DC) I B 40 mA Base Current (Pulse) I BP 100 mA Total Power Dissipation (Tc=25℃) PC 10 W Junction Temperature T J 150 ℃ Storage Temperature T STG -40 ~ +150 ℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV CBO I C = 100µA 600 V Collector-Emitter Breakdown Voltage BV CEO I C = 10mA 400 V Emitter-Base Breakdown Voltage BV EBO I E = 10µA 6 V Collector Cutoff Current I CBO V CB = 550V 10 µA Collector Cutoff Current I CEO V CB = 400V 10 µA Emitter Cutoff Current I EBO V EB = 6V 10 µA *VCE (sat) 1 IC = 50mA, IB = 10mA 400 mV C-E Saturation Voltage *VCE (sat) 2 IC = 100mA, IB = 20mA 750 mV B-E Saturation Voltage *V BE (sat) I C = 50mA, IB = 10mA 1 V *hFE1 V CE = 10V, IC = 10mA 8 DC Current Gain *hFE2 V CE = 10V, IC = 50mA 10 36 *Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 www.unisonic.com.tw QW-R213-015,A CHARACTERISTICS CURVE hFE Collector Current (mA) DC Current Gain & Collector Current 1000100 100 hFE @ VCE = 10V Saturation Voltage (mV) Collector Current (mA) 10 100 Saturation Voltage & Collector Current 100 1000 10000 VCE(sat) @ IC = 5IB 10000 100 VBE(sat) @ IC = 5IB 0.1 Collector Current (mA) Reverse Biased Voltage (V) CapacitanceReverse Biased Voltage 10010 1000 Cib Cob 100 100 Collector Current (mA) 100 400 1000 600300 10000 On Voltage & Collector Current On Voltage-Bton Bton @ VCE = 10V 200 500 0.1 Collector Current (mA) Forward Biased Voltage (V) Safe Operating Area 250100 10000 Switching Time & Collector Current Switching Time (? s) 100 TSTGTon Tf Collector Current (mA) 100 400 600300200 500 VCC = 100V, IC = 5IB1 = -5IB2 PT=1ms 1000 150 20050 PT=100ms PT=1s UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.