HF08-CS2501 HANBIT | Alldatasheet
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Technical content
URL : www.hbe.co.kr 1 HANBit Electronics Co. Ltd REV_02(August,2002) PIN ASSIGNMENT GENERAL DESCRIPTION The HF08-CS2501 is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 2M x 8bit FROM mounted on a 80-pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state -machine, which controls the erase and programming circuitry. Write cycles also internally latch addre sses and data needed for the programming and erase operations. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL - compatible.
FEATURES
w Access time : 75, 90 and 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 5V ± 0.5V power supply w Easy memory expansion w All inputs and outputs are TTL -compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cycle w Sectors erase architecture w Sector group protection w Temporary sector group unprotection w The used device is Am29F016B OPTIONS MARKING w Timing 90ns access -90 w Packages 80-pin SIMM M PIN SYMBOL PIN SYMBOL PIN SYMBOL
1 VSS 28 DQ14 55 A17
2 VCC 29 DQ13 56 A18
3 NC 30 DQ12 57 A19
4 A3 31 DQ11 58 A20
5 A2 32 DQ10 59 /CE1
6 A1 33 DQ9 60 /WE1
7 A0 34 DQ8 61 /OE1
8 DQ0 35 /CE0 62 VSS
9 DQ1 36 VCC 63 DQ24
10 DQ2 37 PD5 64 DQ25
11 DQ3 38 A11 65 DQ26
12 VSS 39 A12 66 DQ27
13 DQ4 40 A13 67 DQ28
14 DQ5 41 A14 68 DQ29
15 DQ6 42 A15 69 DQ30
16 DQ7 43 VSS 70 DQ31
19 A4 46 DQ18 73 NC
20 A5 47 DQ19 74 NC
21 A6 48 DQ20 75 PD1
22 A7 49 DQ21 76 PD2
23 A8 50 DQ22 77 PD3
24 A9 51 DQ23 78 VSS
25 VSS 52 NC 79 PD4
26 A10 53 A16 80 VSS
27 DQ15 54 VSS
FLASH-ROM MODULE 8MByte (2M x 32-Bit), 80pin-SIMM, 5V Part No. HF08-CS2501 80-PIN SIMM TOP VIEW
URL : www.hbe.co.kr 2 HANBit Electronics Co. Ltd REV_02(August,2002) DQ0 - DQ31 A0 – A20 A0-20 /WE /OE DQ 0-7 /CE RY-BY /Reset A0-20 /WE /OE DQ 8-15 /CE RY-BY /Reset A0-20 /WE /OE DQ16-23 /CE RY-BY /Reset A0-20 /WE /OE DQ24-31 /CE RY-BY /Reset /WE0 /WE0 /WE1 /WE1 /OE1 /CE0 RY-/BY1 /Reset /OE0 /RY-BY0 FUNCTIONAL BLOCK DIAGRAM
URL : www.hbe.co.kr 3 HANBit Electronics Co. Ltd REV_02(August,2002) TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Q ACTIVE WRITE or ERASE X L L D ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING Voltage with respect to ground all other pins VIN,OUT -2.0V to +7.0V Voltage with respect to ground Vcc VCC -2.0V to +7.0V Storage Temperature TSTG -65oC to +125oC Operating Temperature TA -55oC to +125oC Power Dissipation PD 4W w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN TYP. MAX Vcc for ± 10% device Supply Voltages Vcc 4.5V 5.5V Ground VSS 0 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS Input Leakage Current Vcc=Vcc max, VIN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.5mA, Vcc = Vcc min VOH 2.4 V Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL 0.45 V Vcc Active Current for Read(1) /CE = VIL, /OE=VIH, ICC1 40 mA Vcc Active Current for Program or Erase(2) /CE = VIL, /OE=VIH ICC2 60 mA Vcc Standby Current /CE= VIH ICC3 1.0 mA Low Vcc Lock-Out Voltage VLKO 3.2 4.2 V Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max
URL : www.hbe.co.kr 4 HANBit Electronics Co. Ltd REV_02(August,2002) ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. TYP. MAX. UNIT COMMENTS Sector Erase Time - 1 8 sec Excludes 00H programming prior to erasure Byte Programming Time - 7 300 µs Excludes system-level overhead Chip Programming Time - 14.4 43.2 sec Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL PARAMETER
DESCRIPTION
CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF Notes : Test conditions TA = 25o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC STANDARD DESCRIPTION TEST SETUP -75 -90 UNIT tAVAV tRC Read Cycle Time Min 70 90 ns tAVQV tACC Address to Output Delay /CE = VIL /OE = VIL Max 70 90 ns tELQV tCE Chip Enable to Output Delay /OE = VIL Max 70 90 ns tGLQV tOE Chip Enable to Output Delay Max 40 40 ns tEHQZ tDF Chip Enable to Output High -Z Max 20 20 ns tGHQZ tDF Output Enable to Output High -Z Max 20 20 ns tAXQX tQH Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First Min 0 0 ns
URL : www.hbe.co.kr 5 HANBit Electronics Co. Ltd REV_02(August,2002) TEST SPECIFICATIONS TEST CONDITION ALL SPEED OPTIONS UNIT Output load 1TTL gate Output load capacitance, CL (Including jig capacitance) 100 pF Input rise and full times 20 ns Input pulse levels 0.45-2.4 V Input timing measurement reference levels 0.8 V Output timing measurement reference levels 2.0 V Erase/Program Operations PARAMETER SYMBOLS JEDEC STANDARD DESCRIPTION -75 -90 UNIT tAVAV tWC Write Cycle Time Min 70 90 ns tAVWL tAS Address Setup Time Min 0 0 ns tWLAX tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 40 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns tGHWL tGHWL Read Recover Time Before Write Min 0 0 ns tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 40 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs 5.0V Device Under Test 2.7kΩ Diodes = IN3064 or Equivalent 6.2kΩ IN3064 or Equivalent CL Note : CL = 100pF including jig c apacitance
URL : www.hbe.co.kr 6 HANBit Electronics Co. Ltd REV_02(August,2002) tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 sec tVCS Vcc set up time Min 50 50 µs Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Pro tect operations u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS JEDEC STANDARD DESCRIPTION -75 -90 UNIT tAVAV tWC Write Cycle Time Min 70 90 ns tAVWL tAS Address Setup Time Min 0 0 ns tWLAX tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 40 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns tGHWL tGHWL Read Recover Time Before Write Min 0 0 ns tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 40 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 sec Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations
URL : www.hbe.co.kr 7 HANBit Electronics Co. Ltd REV_02(August,2002) u READ OPERATIONS TIMING u RESET TIMING
URL : www.hbe.co.kr 8 HANBit Electronics Co. Ltd REV_02(August,2002) u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS
URL : www.hbe.co.kr 9 HANBit Electronics Co. Ltd REV_02(August,2002) u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
URL : www.hbe.co.kr 10 HANBit Electronics Co. Ltd REV_02(August,2002) u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
URL : www.hbe.co.kr 11 HANBit Electronics Co. Ltd REV_02(August,2002) PACKAGE DIMENSIONS <FRONT SIDE> <REAR SIDE> 0.25 mm MAX MIN 2.54 mm 1.27 (Solder & Gold Plating) Gold: 1.04±0.10 mm Solder: 0.914±0.10 mm 1.27(±0.08)
URL : www.hbe.co.kr 12 HANBit Electronics Co. Ltd REV_02(August,2002)
ORDERING INFORMATION
Part Number Density Org. Package Component Number Vcc SPEED HF08-CS2501 8MByte 2M× 32bit 80Pin-SIMM 4EA 5.0V 90ns