HDD25NXX HIRECT | Alldatasheet
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Diode-Diode MODULE HDD25NXX Symbol Characteristics Conditions TJ (0C) Value Unit BLOCKING PARAMETERS VRRM Repetitive peak reverse voltage 150 200-1800 V VDRM Repetitive peak off-stage voltage 150 200-1800 V IRRM Repetitive peak reverse current V = VRRM 150 3 mA CONDUCTING PARAMETERS IF(AV) Average on-state current 180 sine, 50H Z, TC = 1000C 25 A IRMS RMS on-state current 40 A IFSM Surge on-state current 500 A I2t I2t Sine wave, 10mS without reverse voltage 150 1250 A VT Peak on-state voltage drop On-state current = 80A 150 1.40 V V0 Threshold voltage 25 0.85 V R0 On-state slope resistance 25 6.00 m Ω THERMAL & MECHANICAL PARAMETERS R TH (J-C) Thermal impedance, 180 conduction, Sine J to C Per Arm Per Module 1.00 0.50 0C/W RTH (C-HK) Thermal impedance C to HK Per Arm Per Module 0.20 0.10 0C/W TJ Maximum Permissible junction temperature 150 0C TSTG Storage temperature range -40 – 150 0C VISOL Insulation test voltage, RMS F = 50Hz, 1 min 2.5 kV M1 Mounting Torque 4 NM M2 Terminal connection Torque 4 NM W Weight 90 gms HH II NN DD RR EE CC TT II FF II EE RR SS LL TT DD 1 of 6
Diode-Diode MODULE HDD25NXX ALL DIMENSIONS IN MM HH II NN DD RR EE CC TT II FF II EE RR SS LL TT DD 2 of 6
Diode-Diode MODULE HDD25NXX On State Power Loss 0 5 10 15 20 25 30 35 40 45 50 It(av) - A Pt(av) - W 600 1200 1800 DC Maximum Permissible Case Temp 100 120 140 160 180 0 5 10 15 20 25 30 35 40 45 50 It(av) - A Tcase (0C) 600 1200 1800 DC HH II NN DD RR EE CC TT II FF II EE RR SS LL TT DD 3 of 6
Diode-Diode MODULE HDD25NXX Max non repetitive Surge Current 100 200 300 400 500 600 0.01 0.1 1 10 Time in Sec Itsm - A Transient Thermal Impedance Junction to Case 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 0.001 0.01 0.1 1 10 Time in Sec Rth(j-c) HH II NN DD RR EE CC TT II FF II EE RR SS LL TT DD 4 of 6
Diode-Diode MODULE HDD25NXX On State Characteristics 100 110 120 0 0.5 1 1.5 2 2.5 Vt - V It(av) - A HH II NN DD RR EE CC TT II FF II EE RR SS LL TT DD 5 of 6
Diode-Diode MODULE HDD25NXX Ordering Information: - HDD 25 N XX Hirect make Diode- Diode Module IF(AV) = 25A Normal Thyristor V RRM = XX * 100 e.g.12 * 100 =1200V Hind Rectifiers Ltd reserves the right to change the specifications without notice. This datasheet specifies technical information for semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Hind Rectifiers Ltd Lake Road Bhandup (West) Mumbai – 400 078 Tel: - +91 22 2596 8027/28/29/31 Fax: - +91 22 2596 4114 E-mail: - marketing@hirect.com Website: - www.hirect.com June-2008 HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 6 of 6