HDBL151G ZSELEC | Alldatasheet

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153G 154G 155G Unit Symbol 5 0 75 156G 157 G HDBL151G - HDBL157G C a s e : , M o l d e d P l a s t i c HDBL a d Free: For RoHS / Lead Free Version 151G Weight: 0.38 grams (approx.) HDBL151G – HDBL157 G 2.15 3. 9.30 10.30 6.20 6.50 7.40 7.90 Feat ures /circle6 G l a s s P a s s i v a t e d D i e C o n s t r u c t i o n G /circle6 L o w F o r w a r d V o l t a g e D r o p /circle6 High Current Capability /circle6 H i g h S u r g e C u r r e n t C a p a b i l i t y /circle6 Designed for Surface Mount Application B ~ ~ A D E /circle6 P l a s t i c M a t e r i a l – U L R e c o g n i t i o n F l a m m a b i l i t y C l a s s i f i c a t i o n 9 4 V - O C L H M e c h a ni c a l D a t a J /circle6 /circle6 Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 K /circle6 P o l a r i t y : A s M a r k e d o n C a s e /circle6 /circle6 Mounting Position: Any /circle6 Marking: Type Number M aximum Ratings and Electrical Characteristics @TA=25° C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. DBLS Di m Min Max A B C 0.25 — D 0.08 0. E G 1. 02 1.53 H 8. 00 8.51 J K 5. 00 5.20 L 0.90 1. All Dimensions i n mm 1 of 2 ! Le www.senocn.com Z ibo Seno Electronic Engineering Co., Ltd. HDBL HDBL HDBL HDBL HDBL HDBL DBLS Characteristic -65 to +150 °C nS 35 70 140 280 420 560 800 V 50 100 200 400 600 800 1000 V 1.0 1.3 1.7 V P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR RM S Reverse Voltage VR( RMS) A verage Rectified Output Current @T L = 100°C I O 1. 5 A Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M 50 A Forward Voltage @I F = 1.5A V FM P e a k Re v e r s e C u r r e n t @ TA = 25°C At Rat ed DC Blocking Voltage @T A = 100°C IRM 500 µA Revers e Recovery Time (Note 1) trr T ypical Junction Capacitance (Note 2) Cj 15 pF T ypical Thermal Resistance (Note 3) R/G01JL 15 °C/W Operat ing and Storage Temperature Range Tj, TST G Not e: 1. Measured w ith IF = 0 .5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENT BRIDGE RECTIFIER 1.5A Alldatasheet

www.senocn.com Z ibo Seno Electronic Engineering Co., Ltd. HDBL151G – HDBL157 G HDBL151G - HDBL157G Fig.

5 Recovery

0.01 0.1 1.0 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORW ARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per element) F T = 25°C Pulse Width = 300µs 2% duty cycle j 100 1 10 100 C , CAPA CITANCE (pF) J V , REVERSE VOLTAGE (V) Fig. 4 Typ Junction Capacitance (per element) R T = 25°c f = 1.0 Mhz V = 50 mV p-p j sig 0.01 0.1 1.0 100 2004 0 60 80 100 120 140 I , INSTANT ANEOUS REVERSE CURRENT (µA) R PE RCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) T = 125°Cj T = 25°Cj 1.0 2.0 11 0 100 I , P EAK FORWARD SURGE CURRENT (A) FS M N UMBE R OF CYCLES AT 60 Hz Fig. 3 M ax Non-Repetitive Peak Forward Surge C urrent Si ngle half-sine-Wave (JEDEC Method) 40 60 80 100 120 140 I , A VERAGE FORWARD CURRENT (A) T , AMBIENT TEMPERATURE (°C) Fig. 1 Output Current Derating Curve A Hz Resistive or Inductive load 1.5