HDB101G CHENYI | Alldatasheet

Document overview

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Technical content

Features

  • High Forward Surge Capability
  • Ideal for printed circuit boards
  • High Temperature Soldering: 250oC for 10 seconds
  • Reliable low cost construction utilizing molded plastic technique Maximum Ratings
  • Operating Temperature: -55°C to +150°C
  • Storage Temperature: -55°C to +150°C
  • For Capacitive Load, Derate Current by 20% Part Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage HDB101G 50V 35V 50V HDB102G 100V 70V 100V HDB103G 200V 140V 200V HDB104G 400V 280V 400V HDB105G 600V 420V 600V HDB106G 800V 560V 800V HDB107G 1000V 700V 1000V Electrical Characteristics @ 25°C U nless Otherwise Specified Average Forward Current I F(AV) 1.0 A TC = 40°C Peak Forward Surge Current I FSM 50A Maximum Instantaneous Forward Voltage HDB101G-103G HDB104G HDB105G-107G V F 1.0V 1.3V 1.7V IFM = 1.0A; TC = 25°C Maximum DC Reverse Current At Rated DC Blocking Voltage I R 5.0µA 500uA TC = 25°C TC = 125°C Maximum Reverse Recovery Time HDB101G-104G HDB105G-107G T rr 50ns 75ns IF=0.5A, IR=1.0A, Irr=0.25A www.cnelectr .com 8.3ms, half sine TJ=150oC DIM MIN MAX MIN MAX NOTE A .320 .335 8.13 8.51 B .245 .255 6.2 6.5 C .300 .350 7.60 8.90 D .236 .283 6.01 7.20 E .120 .130 3.05 3.3 F .016 .022 0.41 0.56 G .195 .205 5.00 5.20 DIMENSIONS INCHES MM DB-1 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 A B C D E F G + - ~ ~ Notch

FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50/c87 NONINDUCTIVE /c49/c87 NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (-) (+) 10/c87 NONINDUCTIVE -1.0A -0.25A +0.5A trr 1cm SET TIME BASE FOR 5/ 10ns/ cm FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FOR W ARD SURGE CURRENT .(A) 1 2 5 10 20 100 50 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave JEDEC Method FIG.4- TYPICAL FORWARD CHARACTERISTICS INST ANT ANEOUS FOR W ARD CURRENT .(A) 0.001 0.01 0.1 1.0 FORWARD VOLTAGE. (V) Tj=25 C0 HDB101G DB104G HDB 105G HDB 106G~HDB 107G FIG.6- TYPICAL JUNCTION CAPACITANCE JUNCTION CAP ACIT ANCE.(pF) .1 .5 1 5 2 10 20 50 100 200 500 REVERSE VOLTAGE. (V) Tj=25 C0 HDB101G~HDB105GHDB106G~HDB 107G FIG.3- TYPICAL REVERSE CHARACTERISTICS INST ANT ANEOUS REVERSE CURRENT 0 20 40 60 80 100 120 0.1 1.0 100 1000 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) Tj=25 C0 Tj=125 C0 AVERAGE FOR W ARD CURRENT 20 40 60 80 100 120 140 1500 0.5 1.0 AMBIENT TEMPERATURE. ( C) o 60Hz RESISTIVE OR INDUCTIVE LOAD Copper Pauls .51" x .51" (13mm x 13mm) .06" (1.5mm) PCB www.cnelectr.com HDB101G thru HDB107G