HD75160A RENESAS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 13

Technical content

Features

  • Ordering Information Part Name Package Type Package Code Package Abbreviation Taping Abbreviation (Quantity) HD75160AP DILP-20 pin DP-20N, -20NEV P — Pin Arrangement (Top view) TE

20 VCC

Rev.2.00, Jul.16.2004, page 2 of 12 Function Table Drivers Receivers Input Input D TE PE Output B B TE PE Output D H HHHL L XL L HXLHLXH HX L Z *1 XHXZ XL X Z *1 H : High level L : Low level X : Irrelevant Z : High impedance Note: 1. This is the high impedance state of a normal three state output modified by the internal resistors to V CC and ground. Absolute Maximum Ratings Item Symbol Rating Unit Supply Voltage V CC 7V Input Voltage V IN 5.5 V Output Current I OL 100 mA Power Dissipation (Ta = 25°C) P T 1150 mW Operating temperature range Topr 0 to 70 °C Storage Temperature Range Tstg –65 to +150 °C Note: 1. The absolute maximum ratings are values which must not individually be exceeded, and furthermore, no two of which may be realized at the same time. Recommended Operating Conditions Item Symbol Min Typ Max Unit Supply Voltage V CC 4.75 5.00 5.25 V Output Current Bus Ports With Pull Ups Active I OH — — –5.2 mA Terminal Ports — — –800 µA Output Current Bus Ports I OL ——4 8m A Terminal Ports — — 16 Operating Temperature Topr 0 — 70 °C

Rev.2.00, Jul.16.2004, page 3 of 12 Logic Diagram PE D1 D TE R B1 D R B2 D R B3 D R B4 D R B5 D R B6 D R B7 D R B8 GPIB I/O PORTS TERMINAL

Rev.2.00, Jul.16.2004, page 4 of 12 Item Symbol V CC Min Max Unit Conditions Input Voltage V IH 2 ——V VIL ——0 . 8 Input Clamp Voltage V IK — — –1.5 V II = –18 mA Hysteresis Bus V T + – VT – 0 . 4 ——V IOutput Voltage Terminal V OH 2 . 7 ——V I OH = –800 µA, TE at 0.8 V Bus 2.5 — — I OH = –5.2 mA, PE and TE at 2 V Terminal V OL ——0 . 5 V I OL = 16 mA, TE at 0.8 V B u s ——0 . 5 I OL = 48 mA, TE at 2 V Input Current Terminal I I — — 100 µA V I = 5.5 V IIH ——2 0 V I = 2.7 V IIL — — –100 V I = 0.5 V Voltage At Bus Port V I/O (bus) 2.5 — 3.7 V Driver I I(bus) = 0 — — –1.5 Disabled I I(bus) = –12 mA Current Into Bus V CC ON I I/O (bus) –1.3 — — mA Driver V I(bus) = –1.5 V to 0.4 V Port 0 — –3.2 Disabled V I(bus) = 0.4 V to 2.5 V ——+ 2 . 5 –3.2 VI(bus) = 2.5 V to 3.7 V 0— 2 . 5 V I(bus) = 3.7 V to 5 V 0.7 — 2.5 V I(bus) = 5 V to 5.5 V ——4 0µ AV CC = 0, VI(bus) = 0 V to 2.5 V Short circuit Terminal I OS –15 — –75 mA Output Current Bus –25 — –125 Supply Voltage I CC — 60 80 mA No Load, Receivers Low and Enabled — 75 100 No Load, Drivers Low and Enabled Busport Capacitance C I/O (bus) —3 0—p FV CC = 5 V or 0 V, VI/O = 0 to 2 V, f = 1 MHz Note: 1. V CC = 5 V, Ta = 25°C Switching Characteristics (VCC = 5 V, Ta = 25°C) Item Symbol Input Output Min Typ Max Unit Test Circuit Conditions Propagation Delay t PLH Terminal BUS — 14 20 ns 1 C L = 30 pF Time t PHL —1 42 0 R L = 38.3 Ω to 2.3 V tPLH BUS Terminal — 12 20 2 C L = 30 pF tPHL —1 62 2 R L = 240 Ω to 5 V Output Enable Time t ZH TE BUS — 25 35 3 C L = 15 pF Output Disable Time t HZ —1 32 2 R L = 480 Ω to 0 V Output Enable Time t ZL —2 23 5 C L = 15 pF Output Disable Time t LZ —2 23 2 R L = 38.3 Ω to 2.3 V Output Enable Time t ZH TE Terminal — 20 30 4 C L = 15 pF Output Disable Time t HZ —1 22 0 R L = 3 kΩ to 0 V Output Enable Time t ZL —2 33 2 C L = 15 pF Output Disable Time t LZ —1 93 0 R L = 280 Ω to 5 V Output Pull up Enable Time ten PE BUS — 15 22 5 C L = 15pF RL = 480 Ω to 0 V Output Pull up Disable Time tdis — 13 20

Rev.2.00, Jul.16.2004, page 5 of 12 Switching Time Test Method 1. tPLH, tPHL C = 30 pF L Output PE 3 V D R TE R = L Ω R = 38.3 L Ω 2.3 V BD 3 V Pulse Generator Waveforms-1 Input D 10 % 90 % tr tf 1.5 V 90 % 0 V 3 V 1.5 V 10 % Output B tPLH tPHL 2 V 0.8 V VOH VOL

Rev.2.00, Jul.16.2004, page 6 of 12 2. tPLH, tPHL C = 30 pF L OutputTE R D R = L Ω R = 240 L Ω 5 V DBPulse Generator Waveforms-2 Input B 10 % 90 % tr tf 1.5 V 90 % 0 V 3 V 1.5 V 10 % Output D tPLH tPHL 1.5 V 1.5 V VOH VOL

Rev.2.00, Jul.16.2004, page 7 of 12 3. tZH, tHZ, tZL, tLZ C = 15 pF L PE 3 V D R TE 2.3 V BD R = L Ω Output R = 38.3 L Ω R = 480 L Ω Pulse Generator Waveforms-3 Input TE 10 % 90 % tr tf 1.5 V 90 % 0 V 3 V 1.5 V 10 % Output B S1 to 3 V S2 Closed S3 Open t ZH tHZ 2 V VOH VOL Output B S1 to GND S2 Open S3 Closed 0.8 V tZL tLZ 2.3 V 0.3 V 90 % 10 %

Rev.2.00, Jul.16.2004, page 8 of 12 4. tZH, tHZ, tZL, tLZ S13 V R D D B Output C = 15 pF L R = L Ω 5 V R = 280 L Ω R = 3 k L Ω Pulse Generator Waveforms-4 Input TE 90 % 1.5 V 90 % 0 V 3 V 1.5 V 10 % Output D S1 to 3 V S2 Closed S3 Open t ZH tHZ 1.5 V VOH VOL tf 10 % tr Output D S1 to GND S2 Open S3 Closed 1.5 V tZL tLZ 5 V 90 % 10 % 0 V

Rev.2.00, Jul.16.2004, page 9 of 12 5. ten, tdis C = 15 pF L Output PE 3 V D R TE R = L Ω R = 480 L Ω BD Pulse Generator Waveforms-5 Input PE 10 % 90 % tr tf 1.5 V 90 % 0 V 3 V 1.5 V 10 % Output B ten tdis 2 V VOH VOL 90 % Notes: 1. The pulse generator has the following characteristics: PRR = 1 MHz, 50% duty cycle, tr ≤ 6 ns, t f ≤ 6 ns, Zout = 50 Ω 2. CL includes probe and jig capacitance. 3. All diodes are 1S2074(H).

Rev.2.00, Jul.16.2004, page 10 of 12 Characteristics Of Driver And Receiver 0 –10 V = 5.25 VCC T = 25a °C –20 –30 –40 –50 5.00 V 4.75 V 0 –20 V = 5.25 VCC T = 25a °C –40 –60 –80 –100 5.00 V 4.75 V 0.5 0 10 V = 5.25 VCC T = 25a °C 0.4 0.3 0.2 0.1 20 30 40 V = 5.00 VCC V = 4.75 VCC 0.5 V = 5.25 VCC T = 25a °C 0.4 0.3 0.2 0.1 12 18 24 30 V = 5.00 VCC V = 4.75 VCC High Level Output Voltage VOH (V) High Level Output Current IOH (mA) Low Level Output Voltage VOL (V) Low Level Output Current IOL (mA) High Level Output Voltage VOH (V) High Level Output Current IOH (mA) Low Level Output Voltage VOL (V) Low Level Output Current IOL (mA) (a) Driver Output (b) Driver Output (c) Receiver Output (d) Receiver Output

Rev.2.00, Jul.16.2004, page 11 of 12 V = 5 VCC 0.4 V +TV –T T = 25a °C 0.8 1.2 1.6 2.0 High Level Output Voltage VOUT (V) High Level Output Current VIN (V) (e) Input / Output Characteristics at Receiver

Rev.2.00, Jul.16.2004, page 12 of 12 Package Dimensions Package Code JEDEC JEITA Mass (reference value) DP-20N Conforms 1.26 g

0.51 Min

2.54 Min 5.08 Max 7.62 0.25 + 0.11 24.50

25.40 Max

0.89 1.30 6.30

7.00 Max1 10

0˚ – 15˚

1.27 Max

As of January, 2003 Unit: mm Package Code JEDEC JEITA Mass (reference value) DP-20NEV Conforms 1.26 g 2.54 Min 5.08 Max 7.62 *NI/Pd/AU Plating 24.50 0.89 1.30 6.30 0˚ – 15˚ Unit: mm

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan http://www.renesas.com Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 RENESAS SALES OFFICES © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0