HD216 JUXING | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
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- VRRM 600V
- High surge current capability Smoothly soft reverse recovery time(trr) Low profile surface mounted package in order to minimize board space
- Pb-free lead plating and halogen-free package Electrical Characteristics（Ta=25 Unl℃ ess otherwise specified） Symbol Para meter Value Unit Non-repetitive peak reverse voltage 600 V V R(RMS) RMS reverse voltage 420 V I O Average rectified output current 1 A I FSM Non-repetitive peak forward surge current @t=8.3ms A P D Power dissipation 350 mW R θJA Thermal resistance from junction to ambient 357 ℃/W T J Junction temperature 150 ℃ T stg Storage temperature -55~+150 ℃ VR Reverse Voltage VRM Parameter Symbol Test conditions Min Typ Max Unit IR=100μA 600 Reverse voltage V V VR=540V 0.1 Reverse current IR μA Forward voltage VF I F=100mA 0.95 V Total capacitance Ctot V R=1V,f=1MHz IF=500mA 1.2 V Reverse recovery time t rr I F = 500mA, I R =1A, I rr =0.25A 3 us 8 pF R Marking
- 216 http://www.trr-jx.comversion: 02
FIG.1: FORWARD CURRENT DERATING CURVE IO(A) 100 0.2 0.4 0.6 0.8 1.0 IFSM(A) Number of Cycles FIG.2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 2.5 7.5 12.5 1.6 1.8 http://www.trr-jx.comversion: 02 H D216 Rectification Diode
Package Outline Dimensions SOD-1 23 Suggested Pad Layout SOD-1 23 http://www.trr-jx.comversion: 02 H D216 Rectification Diode